US4782375A
Expired / Lapsed
US
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Integratable hall element
Assignee: Siemens Building Technologies AG
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Filing: 1986-12-19
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Granted: 1988-11-01
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Expires: 2006-12-19
Abstract
Abstract In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement comprises the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.
Inventors
- 👤 Radivoje Popovic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:56
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101; G; G01; G01R; G01R15/00; G01R15/14; G01R15/20; G01R15/202; G01R21/00; G01R21/08
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
199 words
An integratable Hall element comprising: a semiconductor layer having a major surface and having a thickness; first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes; a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface; the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrode along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.
Claim 2
Dependent Claim
199 words
An integratable Hall element comprising: a semiconductor layer having a major surface and having a thickness; first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes; a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes are disposed approximately symmetrically about an axis which passes through said first current electrode at approximately a right angle to said major surface; the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrode along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.
Claim 3
Dependent Claim
203 words
An integratable Hall element comprising: a semiconductor layer having a major surface and having a thickness; first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes; a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said sensor electrodes; the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.
Claim 4
Dependent Claim
203 words
An integratable Hall element comprising: a semiconductor layer having a major surface and having a thickness; first and second sensor electrodes spaced apart from each other and at the major surface for deriving an electric Hall voltage between said first and second sensor electrodes; a first current electrode at the major surface and located substantially at the midpoint of a straight line connecting said first and said second sensor electrodes; and a plurality of additional current electrodes spaced away from said first current electrode, wherein at least some of said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said sensor electrodes; the thickness of said semiconductor layer being greater than the distance between said first and second sensor electrodes for enabling electrical currents to flow between said first current electrode and said additional current electrodes along paths extending deeply into said semiconductor layer so that sufficient portions of the paths of the electrical currents are substantially perpendicular to the major surface below said first current electrode to provide said Hall element with sensitivity to a magnetic field component substantially parallel to the major surface.
Claim 5
Dependent Claim
44 words
The integratable Hall element as claimed in claim 1, wherein the remaining of said additional current electrodes are disposed approximately symmetrically about a plane surface which passes through said first current electrode at approximately a right angle to the line connecting said sensor electrodes.
Claim 6
Dependent Claim
64 words
The integratable Hall element as claimed in claim 1 or claim 2 or claim 3, further comprising a connecting contact associated with each of two of said additional current electrodes, two resistors selected to cancel an offset voltage inherent in said Hall element and a current source; said resistors connecting each of said additional current electrodes, respectively, to one terminal of said current source.
Claim 7
Dependent Claim
55 words
The integratable Hall element as claimed in claim 1 or claim 2 or claim 3, further comprising a connecting contact associated with each of two of said additional current electrodes and two resistors selected to cancel an offset voltage inherent in said Hall element; said resistors being connected to each of said connecting contacts, respectively.
Claim 8
Dependent Claim
31 words
The integratable Hall element as claimed in claim 1, wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion.
Claim 9
Dependent Claim
31 words
The integratable Hall element as claimed in claim 2, wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion.
Claim 10
Dependent Claim
31 words
The integratable Hall element as claimed in claim 3, wherein at least some of said additional current electrodes are each defined by at least one relatively large electrically conducting surface portion.
Claim 11
Dependent Claim
39 words
The integratable Hall element as claimed in claim 1, wherein at least some of said additional current electrodes are each defined by relatively large electrically conducting surface portions and said surface portions form pairs symmetrically disposed about said axis.
Claim 12
Dependent Claim
40 words
The integratable Hall element as claimed in claim 2, wherein at least some of said additional current electrodes are each defined by relatively large electrically conducting surface portions and said surface portions form pairs symmetrically disposed about said plane surface.
Claim 13
Dependent Claim
55 words
The integratable Hall element as claimed in claim 3, wherein at least some of said additional current electrodes are each defined by relatively large electrically conducting surface portions, some of said surface portions form pairs symmetrically disposed about said axis and the remaining of said surface portions form pairs symmetrically disposed about said plane surface.
Claim 14
Dependent Claim
20 words
The integratable Hall element as claimed in claim 6, wherein said surface portion is disposed parallel to said major surface.
Claim 15
Dependent Claim
20 words
The integratable Hall element as claimed in claim 7, wherein said surface portion is disposed parallel to said major surface.
Claim 16
Dependent Claim
20 words
The integratable Hall element as claimed in claim 8, wherein said surface portion is disposed parallel to said major surface.
Claim 17
Dependent Claim
22 words
The integratable Hall element as claimed in claim 9, wherein all of said surface portions are disposed parallel to said major surface.
Claim 18
Dependent Claim
22 words
The integratable Hall element as claimed in claim 10, wherein all of said surface portions are disposed parallel to said major surface.
Claim 19
Dependent Claim
22 words
The integratable Hall element as claimed in claim 11, wherein all of said surface portions are disposed parallel to said major surface.
Claim 20
Dependent Claim
26 words
The integratable Hall element as claimed in claim 15 or claim 16 or claim 17, wherein all of said surface portions lie in a common plane.
Claim 21
Dependent Claim
75 words
The integratable Hall element as claimed in claim 1 or claim 2 or claim 3, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least a part of each of said connecting contacts being a metallic contact disposed at said major surface.
Claim 22
Dependent Claim
128 words
The integratable Hall element as claimed in claim 1 or claim 2 or claim 3, wherein at least some of said first and said additional current electrodes and said sensor electrodes are each defined as a surface portion comprising a semiconductor material, further comprising a connecting contact to each of said first and said additional current electrodes and said sensor electrodes, at least a part of each of said connecting contacts being a metallic contact disposed at said major surface and a diffusion contact below said metallic contact and in intimate contact with said metallic contact, said diffusion contacts being strongly doped with foreign atoms, and being of the same type of conductivity as that of said semiconductor material, said diffusion contacts being diffused into said semiconductor material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-01 | 1992-05-02 | 1992-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-01 | 1996-05-02 | 1996-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-01 | 2000-05-02 | 2000-11-01 | $7700.00 | Window Closed / Lapsed |