Patent US5547889A successfully refreshed from Google Patents.
US5547889A
Expired / Lapsed
US
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Method of forming a semiconductor device having vertical conduction transistors and cylindrical cell gates
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-05-08
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Granted: 1996-08-20
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Expires: 2015-05-08
Abstract
Abstract A semiconductor device, e.g., a DRAM, having vertical conduction transistors and cylindrical cell gates, which includes a plurality of spaced-apart trench isolation regions formed in a semiconductor substrate, a plurality of bit lines formed on the semiconductor substrate, a silicon pillar formed on each bit line, a gate insulating layer and gate line formed on each silicon pillar in surrounding relationship thereto, a planarizing layer formed in recesses in the gate lines, an insulating layer formed on the upper surfaces of the gate line and planarizing layer, a plurality of contact holes provided in vertically aligned portions of the insulating layer, the gate line, and the gate insulating layer located above respective ones of the silicon pillars, and, a storage node of a capacitor formed with the contact holes and adjacent surface portions of the insulating layer, in contact with the source region of respective ones of the silicon pillars. Each of the silicon pillars includes vertically stacked layers which serve as respective drain, channel, and source regions of a transistor.
Inventors
- 👤 Hyoung-sub Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:46
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/34
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
276 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buried impurity layer of a second conductivity type in a semiconductor substrate of a first conductivity type; forming a surface impurity layer of said second conductivity type in a surface portion of said semiconductor substrate wherein said buried impurity layer is formed; forming a first trench isolation region in order to define an active region in said semiconductor substrate wherein said surface impurity layer is formed; etching said active region deeper than said buried impurity layer, to thereby form a second trench; forming a bit line in a lower portion of said second trench; filling an interior of said second trench wherein said bit line is formed, with an insulating material; etching said first trench isolation region to said buried impurity layer, to thereby form a silicon pillar comprised of said buried impurity layer of said second conductivity type, said semiconductor substrate of said first conductivity type, and said surface impurity layer of said second conductivity type; forming a gate insulating film and a gate line sequentially so as to surround said silicon pillar; depositing an insulating material on the resultant structure wherein said gate line is formed, and etching back said insulating material to thereby form a planarizing layer; forming an insulating layer on the resultant structure wherein said planarizing layer is formed; etching said insulating layer partially to thereby form a contact hole for exposing said surface impurity layer in said silicon pillar; and, forming a storage node of a capacitor connected to said surface impurity layer through said contact hole, on the resultant structure wherein said contact hole is formed.
Claim 2
Independent Claim
276 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buried impurity layer of a second conductivity type in a semiconductor substrate of a first conductivity type; forming a surface impurity layer of said second conductivity type in a surface portion of said semiconductor substrate wherein said buried impurity layer is formed; forming a first trench isolation region in order to define an active region in said semiconductor substrate wherein said surface impurity layer is formed; etching said active region deeper than said buried impurity layer, to thereby form a second trench; forming a bit line in a lower portion of said second trench; filling an interior of said second trench wherein said bit line is formed, with an insulating material; etching said first trench isolation region to said buried impurity layer, to thereby form a silicon pillar comprised of said buried impurity layer of said second conductivity type, said semiconductor substrate of said first conductivity type, and said surface impurity layer of said second conductivity type; forming a gate insulating film and a gate line sequentially so as to surround said silicon pillar; depositing an insulating material on the resultant structure wherein said gate line is formed, and etching back said insulating material to thereby form a planarizing layer; forming an insulating layer on the resultant structure wherein said planarizing layer is formed; etching said insulating layer partially to thereby form a contact hole for exposing said surface impurity layer in said silicon pillar; and, forming a storage node of a capacitor connected to said surface impurity layer through said contact hole, on the resultant structure wherein said contact hole is formed.
Claim 3
Dependent Claim
34 words
The method for manufacturing a semiconductor device as set forth in claim 1, wherein said buried impurity layer and said surface impurity layer of said second conductivity type are formed by an epitaxial process.
Claim 4
Dependent Claim
80 words
The method for manufacturing a semiconductor device as set forth in claim 1, wherein said buried impurity layer of said second conductivity type is formed by implanting first impurity ions of said second conductivity type in said semiconductor substrate at a first energy, and said surface impurity layer of said second conductivity type is formed by implanting second impurity ions of said second conductivity type in said semiconductor substrate at a second energy which is lower than said first energy.
References Cited (Backward Citations)
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