Chemical vapor deposition method for forming a deposited film with the use of liquid raw material

Claim 2

A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material, said chemical vapor deposition method comprises: supplying said film-forming liquid raw material while regulating the amount of said film-forming liquid raw material into a liquid gasifying system comprising a liquid atomizing mechanism and a liquid gasifying mechanism provided with a plurality of plate-like shaped heating members respectively having a plurality of perforations; simultaneously supplying a gas into said liquid gasifying system while controlling the flow rate of said gas, wherein said film-forming liquid raw material is atomized into liquid fine particles which are heated together with said gas while being passed through said perforations of said plurality of plate-like shaped heating members while controlling the temperature of the heating members to produce a film-forming raw material gas; introducing said film-forming raw material gas from said gasifying system into a reaction chamber; and chemically reacting said film-forming raw material gas with a surface of a substrate disposed in said reaction chamber, said substrate being maintained at a temperature, sufficient to thereby cause the formation of a deposited film on said surface of said substrate.

Claim 3

A chemical vapor deposition method according to claim 1, wherein at least one of the plurality of heating members is provided with a heat generating resistor.

Claim 4

A chemical vapor deposition method according to claim 1, wherein said chemical vapor deposition method is conducted so as to satisfy the equation: T 1 <T 2 <T 3 , with T 1 being a temperature of the film-forming liquid raw material upon supplying into the liquid gasifying system, T 2 being a temperature of the heating member upon gasifying the liquid fine particles, and T 3 being a temperature of the substrate upon film formation.

Claim 5

A chemical vapor deposition method according to claim 1, wherein the film-forming raw material is one or more members selected from the group consisting of organometallic compounds.

Claim 6

A chemical vapor deposition method according to claim 4, wherein the organometallic compounds are alkylaluminum hydrides.

Claim 7

A chemical vapor deposition method according to claim 4, wherein the gas is H 2 gas.

Claim 8

A chemical vapor deposition method according to claim 6, wherein the deposited film formed on the substrate is a deposited film containing aluminum as the main constituent.

Claim 9

A chemical vapor deposition method according to claim 1, wherein the film-forming raw material gas is one or more members selected from the group consisting of organic silane compounds.

Claim 10

A chemical vapor deposition method according to claim 8, wherein the gas is O 3 gas.

Claim 11

A chemical vapor deposition method according to claim 9, wherein the deposited film formed on the substrate is a silicon oxide film.

Claim 12

A chemical vapor deposition method for forming a deposited film on a substrate, said chemical vapor deposition method comprises: (a) supplying a film-forming raw material in the liquid state into a gasifying system integrally provided with a plurality of plate-like shaped heating members respectively having a plurality of perforations, a plurality of heat regulators regulating the amount of said film-forming raw material and thermodetectors; (b) supplying a gas reactive with said film-forming raw material into said gasifying system while regulating the flow rate of said gas; (c) introducing said film-forming raw material and said gas from said gasifying system into a reaction chamber having a substrate disposed therein while heating said film-forming raw material and said gas by passing said film-forming raw material and said gas through said perforations of said plurality of plate-like shaped heating members while controlling the temperature of said film-forming raw material and said gas at a desired value by means of said heat regulators and said thermo detectors and while gasifying said film-forming raw material into a gaseous state; and (d) chemically reacting said gasified film-forming raw material and said gas introduced into said reaction chamber to cause the formation of a deposited film on said substrate maintained at a reaction temperature in said reaction chamber.

Claim 13

A chemical vapor deposition method for forming a deposited film on a substrate, said chemical vapor deposition method comprises: (a) supplying a film-forming raw material in the liquid state into a gasifying system integrally provided with a plurality of plate-like shaped heating members respectively having a plurality of perforations, a plurality of heat regulators regulating the amount of said film-forming raw material and thermodetectors; (b) supplying a gas reactive with said film-forming raw material into said gasifying system while regulating the flow rate of said gas; (c) introducing said film-forming raw material and said gas from said gasifying system into a reaction chamber having a substrate disposed therein while heating said film-forming raw material and said gas by passing said film-forming raw material and said gas through said perforations of said plurality of plate-like shaped heating members while controlling the temperature of said film-forming raw material and said gas at a desired value by means of said heat regulators and said thermo detectors and while gasifying said film-forming raw material into a gaseous state; and (d) chemically reacting said gasified film-forming raw material and said gas introduced into said reaction chamber to cause the formation of a deposited film on said substrate maintained at a reaction temperature in said reaction chamber.

Claim 14

A chemical vapor deposition method according to claim 11, wherein the film-forming raw material is one or more members selected from the group consisting of alkylaluminum hydrides and the gas is H 2 gas.