Patent US5544189A successfully refreshed from Google Patents.
US5544189A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Furukawa Electric Co Ltd
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Filing: 1993-03-31
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Granted: 1996-08-06
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Expires: 2013-03-31
Abstract
Abstract There is provided a semiconductor laser device comprising a lower optical confinement layer 31, an active layer 3 and an upper optical confinement layer 34, said active layer 3 being inserted between said upper and lower optical confinement layers 31 and 34, characterized in that an electron injection path (along an n-type electrode 10→the upper optical confinement layer 34→the active layer 3) for injecting electrons into the active layer 3 by way of the optical confinement layers and a hole injection path (along p-type electrodes 6→the p-type InP layer 5→the active layer 3) for injecting holes into the active layer 3 without passing through the optical confinement layers are formed therein. With such an arrangement, electrons are injected into the active layer by way of the optical confinement layers, whereas holes are injected into the active layer without passing through the optical confinement layers. Therefore, the device shows a remarkable improvement in the modulation response and modulation bandwidth.
Inventors
- 👤 Toru Fukushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:35
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; B; B82; B82Y; B82Y20/00; H01S5/06; H01S5/062; H01S5/06226; H01S5/10; H01S5/18; H01S5/183; H01S5/18305; H01S5/18341; H01S5/20; H01S5/22; H01S5/2205; H01S5/2222; H01S5/2224; H01S5/227; H01S5/2275; H01S5/30; H01S5/34; H01S5/343; H01S5/34306; H01S5/3434
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
93 words
A semiconductor laser device comprising a lower optical confinement layer, an active layer and an upper optical confinement layer, said active layer being positioned between said upper and lower optical confinement layers, characterized in that an electron injection path for injecting electrons into the active layer by way of the optical confinement layers and a hole injection path for injecting holes directly into the active layer substantially without passing through the optical confinement layers are formed therein and an insulating layer is formed between said electron injection path and said hole injection path.
Claim 2
Dependent Claim
93 words
A semiconductor laser device comprising a lower optical confinement layer, an active layer and an upper optical confinement layer, said active layer being positioned between said upper and lower optical confinement layers, characterized in that an electron injection path for injecting electrons into the active layer by way of the optical confinement layers and a hole injection path for injecting holes directly into the active layer substantially without passing through the optical confinement layers are formed therein and an insulating layer is formed between said electron injection path and said hole injection path.
Claim 3
Dependent Claim
46 words
A semiconductor laser device according to claim 1, wherein the lower optical confinement layer, the active layer and the upper optical confinement layer are formed to a mesa section having an upper side covered by a n-type layer and lateral sides covered by an p-type layer.
Claim 4
Dependent Claim
23 words
A semiconductor laser device according to claim 2, wherein the active layer and the barrier layer are made of a quantum well layer.
Claim 5
Dependent Claim
23 words
A semiconductor laser device according to claim 3, wherein the bandgap of the quantum well layer is longer than the optical confinement layers.
Claim 6
Dependent Claim
23 words
A semiconductor laser device according to claim 2, wherein the lower and upper optical confinement layers are made of a single semiconductor layer.
Claim 7
Dependent Claim
40 words
A semiconductor laser device according to claim 2, wherein an n-electrode is arranged on the n-type layer covering the upper side of the mesa section and p-electrodes are arranged on the p-type layer covering lateral sides of the mesa section.
Claim 8
Dependent Claim
28 words
A semiconductor laser device according to claim 1, wherein a lower reflection film and an upper reflection film are provided under the upper sides of said active layer.
Claim 9
Dependent Claim
44 words
A semiconductor laser device according to claim 7, wherein the n-electrode is arranged on upper side of the upper optical confinement layer and the p-electrodes are arranged on the upper sides of the n-type layer covering the respective lateral sides of the mesa section.
Claim 10
Dependent Claim
20 words
A semiconductor laser device according to claim 7, wherein the lower reflection film is made of a non-doped multilayer film.
Claim 11
Dependent Claim
20 words
A semiconductor laser device according to claim 7, wherein the upper reflection film consists of an n-type semiconductor multilayer film.
References Cited (Backward Citations)
US4166278A
Cited
JPS6352494A
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US4901327A
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JPH02174286A
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JPH02201990A
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US5343487A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-06 | 2004-02-05 | 2004-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-06 | 2008-02-05 | 2008-08-06 | $7700.00 | Window Closed / Lapsed |