US5543334A
Expired / Lapsed
US
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Method of screening semiconductor device
Assignee: Toshiba Corp
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Filing: 1994-12-15
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Granted: 1996-08-06
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Expires: 2014-12-15
Abstract
Abstract A method of screening a semiconductor device. A silicon wafer having gate electrodes formed on the gate oxide film is prepared. An insulating layer is deposited on the silicon wafer. Gate electrode portions of a group of transistors to be tested are exposed. A conductive layer is deposited on the silicon wafer having exposed gate electrodes. The conductive layer is patterned to be a wiring layer so that the gate electrodes of a group of the transistors can be electrically connected to each other. The chip area to be tested is irradiated with light having intensity enough to generate a required quantity of carriers in a depletion layer between a well and a substrate. A predetermined test voltage is applied between the wiring layer and the substrate of the silicon wafer during irradiation of the light to measure current flowing through the wiring layer and the gate oxide film. An abnormality of the gate oxide film can be detected on the basis of the measured current value. The screening method may be conducted before the completion of forming the gate electrodes. Further, gate electrode portions not to be used by a user may not be electrically connected to the gate electrode portions to be used.
Inventors
- 👤 Ichiro Yoshii
- 👤 Hiroyuki Kamijoh
- 👤 Yoshio Ozawa
- 👤 Kikuo Yamabe
- 👤 Kazuhiko Hashimoto
- 👤 Katsuya Okumura
- 👤 Kaoru Hama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:58
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/20; H10P74/207
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
221 words
A method of screening a semiconductor device by testing gate oxide film of a group of transistors formed on a same chip area at the same time in process of manufacturing an integrated circuit including a plurality of MOS transistors having gate electrodes formed on the gate oxide film, which comprises the steps of: preparing a silicon wafer having gate electrodes formed on the gate oxide film; depositing an insulating layer on the silicon wafer; exposing the gate electrode portions of a group of the transistors to be tested; depositing a conductive layer on the silicon wafer having exposed gate electrodes; forming a wiring layer by patterning the conductive layer so that the gate electrodes of a group of the transistors can be electrically connected to each other; irradiating the chip area to be tested with light having intensity enough to generate a quantity of carriers in a depletion layer formed between a well and a substrate of the silicon wafer; applying a test voltage between the wiring layer and the substrate of the silicon wafer during irradiation of the light; measuring current flowing through the wiring layer and the gate oxide film while performing the irradiating step and applying the test voltage step; and detecting an abnormality of the gate oxide film on the basis of the measured current value.
Claim 2
Independent Claim
221 words
A method of screening a semiconductor device by testing gate oxide film of a group of transistors formed on a same chip area at the same time in process of manufacturing an integrated circuit including a plurality of MOS transistors having gate electrodes formed on the gate oxide film, which comprises the steps of: preparing a silicon wafer having gate electrodes formed on the gate oxide film; depositing an insulating layer on the silicon wafer; exposing the gate electrode portions of a group of the transistors to be tested; depositing a conductive layer on the silicon wafer having exposed gate electrodes; forming a wiring layer by patterning the conductive layer so that the gate electrodes of a group of the transistors can be electrically connected to each other; irradiating the chip area to be tested with light having intensity enough to generate a quantity of carriers in a depletion layer formed between a well and a substrate of the silicon wafer; applying a test voltage between the wiring layer and the substrate of the silicon wafer during irradiation of the light; measuring current flowing through the wiring layer and the gate oxide film while performing the irradiating step and applying the test voltage step; and detecting an abnormality of the gate oxide film on the basis of the measured current value.
Claim 3
Dependent Claim
29 words
The screening method of claim 1, wherein the conductive layer is any one of Ti, TiN, polysilicon, a multi-layer film of Ti end a multi-layer of Ti and TiN.
Claim 4
Dependent Claim
45 words
The screening method of claim 1, wherein when the wiring layer is formed of a material of light shading characteristics, no wiring layer portion is formed in an active area of the transistor, and a surface of the silicon wafer is irradiated with the light.
Claim 5
Dependent Claim
18 words
The screening method of claim 3, wherein wavelength of the irradiated light ranges from 600 to 1200 nm.
Claim 6
Dependent Claim
32 words
The screening method of claim 1, wherein when the wiring layer is formed of a material of light shading characteristics, a reverse surface of the silicon wafer is irradiated with the light.
Claim 7
Dependent Claim
17 words
The screening method of claim 5, wherein the light shading material is any of carbon and silicide.
Claim 8
Dependent Claim
37 words
The screening method of claim 1, wherein at least the chip of normal gate oxide film is heat treated at a temperature for restoring a drop of tolerance due to test voltage application for a time period.
Claim 9
Dependent Claim
27 words
The screening method of claim 7, wherein the temperature and time are determined such an extent that the insulating layer and the gate oxide film are formed.
Claim 10
Independent Claim
204 words
A method of screening a semiconductor device by testing gate oxide film of a group of transistors formed on a same chip area at the same time in process of manufacturing an integrated circuit including a plurality of MOS transistors having gate electrodes formed on the gate oxide film, which comprises the steps of: preparing a silicon wafer having gate electrodes formed on the gate oxide film; depositing a conductive layer on the silicon wafer; forming a wiring layer by patterning the conductive layer so that the gate electrodes of a group of the transistors can be formed and further these formed gate electrodes can be electrically connected to each other; irradiating the chip area to be tested with light having intensity enough to generate a quantity of carriers in a depletion layer formed between a well and a substrate of the silicon wafer; applying a test voltage between the wiring layer and the substrate of the silicon wafer during irradiation of the light; measuring current flowing through the wiring layer and the gate oxide film while performing the irradiating step and applying the test voltage step; and detecting an abnormality of the gate oxide film on the basis of the measured current value.
Claim 11
Independent Claim
204 words
A method of screening a semiconductor device by testing gate oxide film of a group of transistors formed on a same chip area at the same time in process of manufacturing an integrated circuit including a plurality of MOS transistors having gate electrodes formed on the gate oxide film, which comprises the steps of: preparing a silicon wafer having gate electrodes formed on the gate oxide film; depositing a conductive layer on the silicon wafer; forming a wiring layer by patterning the conductive layer so that the gate electrodes of a group of the transistors can be formed and further these formed gate electrodes can be electrically connected to each other; irradiating the chip area to be tested with light having intensity enough to generate a quantity of carriers in a depletion layer formed between a well and a substrate of the silicon wafer; applying a test voltage between the wiring layer and the substrate of the silicon wafer during irradiation of the light; measuring current flowing through the wiring layer and the gate oxide film while performing the irradiating step and applying the test voltage step; and detecting an abnormality of the gate oxide film on the basis of the measured current value.
Claim 12
Dependent Claim
30 words
The screening method of claim 9, wherein the conductive layer is any one of Ti, TiN, polysilicon, a multi-layer film of Ti and a multi-layer film of Ti and TiN.
Claim 13
Dependent Claim
16 words
The screening method of claim 9, wherein the wiring layer is formed outside transistor active areas.
Claim 14
Dependent Claim
37 words
The screening method of claim 9, wherein at least the chip of normal gate oxide film is heat treated at a temperature for restoring a drop of tolerance due to test voltage application for a time period.
Claim 15
Independent Claim
213 words
A method of screening a semiconductor device by testing gate oxide film of a group of transistors formed on a same chip area at the same time in process of manufacturing an integrated circuit including a plurality of MOS transistors having gate electrodes formed on the gate oxide film, which comprises the steps of: preparing a silicon wafer having gate electrodes formed on the gate oxide film; depositing a conductive layer on the silicon wafer, said conductive layer serving as a wiring layer to electrically couple the gate electrodes of the plurality of transistors; forming a nonconductive layer area at a position corresponding to an active area of the transistor formed at least in a well of the silicon wafer; irradiating the chip area to be tested with light having intensity enough to generate a quantity of carriers an a depletion layer formed between a well and a substrate of the silicon wafer; applying a test voltage between the wiring layer end the substrate of the silicon wafer during irradiation of the light; measuring current flowing through the wiring layer and the gate oxide film while performing the irradiating step and applying the test voltage step; and detecting an abnormality of the gate oxide film on the basis of the measured current value.
Claim 16
Independent Claim
213 words
A method of screening a semiconductor device by testing gate oxide film of a group of transistors formed on a same chip area at the same time in process of manufacturing an integrated circuit including a plurality of MOS transistors having gate electrodes formed on the gate oxide film, which comprises the steps of: preparing a silicon wafer having gate electrodes formed on the gate oxide film; depositing a conductive layer on the silicon wafer, said conductive layer serving as a wiring layer to electrically couple the gate electrodes of the plurality of transistors; forming a nonconductive layer area at a position corresponding to an active area of the transistor formed at least in a well of the silicon wafer; irradiating the chip area to be tested with light having intensity enough to generate a quantity of carriers an a depletion layer formed between a well and a substrate of the silicon wafer; applying a test voltage between the wiring layer end the substrate of the silicon wafer during irradiation of the light; measuring current flowing through the wiring layer and the gate oxide film while performing the irradiating step and applying the test voltage step; and detecting an abnormality of the gate oxide film on the basis of the measured current value.
Claim 17
Dependent Claim
37 words
The screening method of claim 13, wherein at least the chip of normal gate oxide film is heat treated at a temperature for restoring a drop of tolerance due to test voltage application for a time period.
Claim 18
Dependent Claim
30 words
The screening method of claim 13, wherein the conductive layer is any one of Ti, TiN, polysilicon, a multi-layer film of Ti and a multi-layer film of Ti and TiN.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-06 | 2004-02-05 | 2004-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-06 | 2008-02-05 | 2008-08-06 | $7700.00 | Window Closed / Lapsed |