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US4473795A Expired / Lapsed US ⏱️ 0.0 years remaining

System for resist defect measurement

Assignee: International Business Machines Corp
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Filing: 1983-02-23
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Granted: 1984-09-25
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Expires: 2003-02-23
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Abstract

Abstract A non-destructive test system for determining the number, size and location of pinhole defects in insulative coatings on a semiconductor substrate employing photocathodic current measurement at the semiconductor surface. This current is produced by contacting the coated semiconductor with an aqueous electrolyte, applying a small electrical bias with respect to a metal electrode, and scanning a small, focused light beam over the semiconductor surface. The frequency of current peaks produced is proportional to defect density. Current peaks provide data relative to defect size and location is correlated relative to scanning data to determine defect location.

Inventors

  • 👤 Robert L. Wood

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 23:16
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2656

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 118 words
A test system for measuring and mapping pinhole defects in an insulator coating on a surface of a photoconductor substrate comprising: optical means for generating a minute spot of light substantially smaller than the area of said surface, means for scanning said spot of light over said surface, means for interposing an electrolyte containing a reducible solute between said surface and said spot of light, means for electrically biasing said substrate with respect to said electrolyte, and means for determining the magnitude and number of current flow variations across said coating and said electrolyte and for determining the scanning position of said spot of light, as respective measurements of the pinhole size, density and location in said coating.
Claim 2
Dependent Claim 118 words
A test system for measuring and mapping pinhole defects in an insulator coating on a surface of a photoconductor substrate comprising: optical means for generating a minute spot of light substantially smaller than the area of said surface, means for scanning said spot of light over said surface, means for interposing an electrolyte containing a reducible solute between said surface and said spot of light, means for electrically biasing said substrate with respect to said electrolyte, and means for determining the magnitude and number of current flow variations across said coating and said electrolyte and for determining the scanning position of said spot of light, as respective measurements of the pinhole size, density and location in said coating.
Claim 3
Dependent Claim 42 words
The system of claim 1, wherein said means for interposing an electrolyte comprises surface tension means coupled to said optical means for positioning, and maintaining a droplet of electrolyte stationary relative to said minute spot of light as said surface is scanned.
Claim 4
Dependent Claim 35 words
The system of claim 2, wherein said surface tension means comprises an electrode structure coupled to said optical means and having a hollow bend to hold said droplet at the end of said optical means.
Claim 5
Dependent Claim 50 words
The system of claim 2, wherein said surface tension means comprises a retention cup coupled to said optical means, said retention cup opening towards said surface and defining a cavity for said droplet, wherein surface tension exists between the edge of said cup and said surface to retain said droplet.
Claim 6
Dependent Claim 11 words
The system of claim 4 wherein said retention cup is plastic.
Claim 7
Dependent Claim 14 words
The system of claim 1, wherein said photoconductive substrate is a silicon semiconductor structure.
Claim 8
Dependent Claim 12 words
The system of claim 6, wherein said coating is a photolithographic resist.
Claim 9
Dependent Claim 14 words
The system of claim 7, wherein said electrolyte is an aqueous sulfuric acid solution.
Claim 10
Dependent Claim 27 words
The system of claim 8, wherein said scanning means comprises means for orthogonal movement of said substrate under a stationary spot of light from said optical means.
Claim 11
Dependent Claim 49 words
The system of claim 1, wherein said means for electrically biasing comprises, a power source, an electrode structure coupled to optical means including surface tension means for securing said electrolyte thereto in bridging relationship with said coating and, means to negatively bias said substrate with respect to said electrolyte.
Claim 12
Dependent Claim 18 words
The system of claim 1, further comprising means to maintain said photoconductive substrate at a substantially constant temperature.
Claim 13
Dependent Claim 39 words
The system of claim 1 wherein said optical means comprises a light source, means for modulating light from said source, and a fiber optic bundle for transmitting said modulated light and projecting it as a spot on said surface.
Claim 14
Dependent Claim 43 words
The system of claim 12 wherein said means for electrically biasing comprises a power source, an electrode coupled to said fiber optic bundle and, said means for interposing an electrolyte coupled to said electrode to maintain said electrolyte in contact with said electrode.
Claim 15
Dependent Claim 43 words
The system of claim 13 wherein said electrode is an annular metal member surrounding said fiber optic bundle and said means for interposing said electrolyte comprises a retaining cup secured to said electrode and opening downward toward said surface to contain said electrolyte.
Claim 16
Independent Claim 114 words
A method for measuring and mapping pinhole defects in an insulator coating on a surface of a photoconductive substrate comprising the steps of: disposing an electrolyte between said surface and a source of light and electrically biasing said photoconductive substrate with respect to said electrolyte; scanning said surface with a minute spot of light substantially smaller than the area of said surface through an electrolyte in contact with and electrically biased with respect to said substrate, wherein said electrolyte contains a reducible solute, and measuring the magnitude and number of current flow variations and position of said spot of light to determine the pinhole size, density and location of such defects in said coating.
Claim 17
Independent Claim 114 words
A method for measuring and mapping pinhole defects in an insulator coating on a surface of a photoconductive substrate comprising the steps of: disposing an electrolyte between said surface and a source of light and electrically biasing said photoconductive substrate with respect to said electrolyte; scanning said surface with a minute spot of light substantially smaller than the area of said surface through an electrolyte in contact with and electrically biased with respect to said substrate, wherein said electrolyte contains a reducible solute, and measuring the magnitude and number of current flow variations and position of said spot of light to determine the pinhole size, density and location of such defects in said coating.
Claim 18
Dependent Claim 14 words
The method of claim 15, wherein said photoconductive substrate is a silicon semiconductor structure.
Claim 19
Dependent Claim 12 words
The method of claim 16, wherein said coating is a photolithographic resist.
Claim 20
Dependent Claim 25 words
The method of claim 17, wherein said electrolyte is an aqueous sulfuric acid solution, and said substrate is negatively biased with respect to said electrolyte.
Claim 21
Dependent Claim 22 words
The method of claim 18, wherein said scanning is effected by orthogonal movement of said substrate relative to said spot of light.
Claim 22
Dependent Claim 24 words
The method of claim 15, further comprising the step of constraining the volume of said electrolyte about the area of said spot of light.

References Cited (Backward Citations)

US3373353A Cited
US3792458A Cited
US3772520A Cited
US4296372A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-09-25 1988-03-26 1988-09-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-09-25 1992-03-26 1992-09-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-09-25 1996-03-26 1996-09-25 $7700.00 Window Closed / Lapsed

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