Switch capacitor interface circuit

Claim 2

An interface circuit interfacing a sensor to a switched capacitor circuit and a processing component, said processing component having a power supply voltage range, said sensor having an output voltage range outside said power supply voltage, said interface circuit comprising: a MOSFET coupled between said sensor and said switched capacitor circuit for connecting said output voltage to said switched capacitor circuit, said MOSFET having a gate oxide layer, a switch conducting-state resistance, a gate voltage and a bulk voltage; and a control circuit coupled to said output of said sensor and to said MOSFET, said control circuit continually adjusting said gate voltage and said bulk voltage in relation to said output voltage to prevent a voltage across said gate oxide layer from exceeding a predetermined value.

Claim 3

An interface circuit as recited in claim 1 wherein said predetermined value corresponds to time dependent dielectric breakdown.

Claim 4

An interface circuit as recited in claim 1 wherein said control circuit maintains a predetermined conducting state resistance for said MOSFET switch.

Claim 5

An interface circuit as recited in claim 1 wherein said MOSFET switch means comprises a PMOS switch.

Claim 6

An interface circuit interfacing a sensor to a switched capacitor circuit and a processing component, said processing component having a power supply voltage range, said sensor having an output voltage range outside said power supply voltage, said interface circuit comprising: a first MOSFET switch receiving said output signal of said sensor; a voltage buffer connected to said first MOSFET switch, said voltage buffer having a voltage buffer output voltage greater than said output voltage of said sensor; a first charge pump connected to said first MOSFET generating a first control voltage, said first charge pump selectively and continually adjusting said first control voltage in relation to said output voltage of said sensor to prevent time dependent dielectric breakdown of said gate oxide layer; a second MOSFET switch connected to said first MOSFET switch, said second MOSFET having a bulk-source junction and a conducting state; a second charge pump connected to said second MOSFET switch, said second charge pump generating a second control voltage, said second charge pump adjusting said second control voltage so that when said second MOSFET is conducting said bulk-source junction of said second MOSFET switch is forward biased; and a switched capacitor circuit electrically coupled to said first MOSFET switch and said second MOSFET switch, providing a translated output corresponding to a predetermined translation of said input voltage of said sensor to within said power supply voltage range of said processing component.

Claim 7

An interface circuit interfacing a sensor to a switched capacitor circuit and a processing component, said processing component having a power supply voltage range, said sensor having an output voltage range outside said power supply voltage, said interface circuit comprising: a first MOSFET switch receiving said output signal of said sensor; a voltage buffer connected to said first MOSFET switch, said voltage buffer having a voltage buffer output voltage greater than said output voltage of said sensor; a first charge pump connected to said first MOSFET generating a first control voltage, said first charge pump selectively and continually adjusting said first control voltage in relation to said output voltage of said sensor to prevent time dependent dielectric breakdown of said gate oxide layer; a second MOSFET switch connected to said first MOSFET switch, said second MOSFET having a bulk-source junction and a conducting state; a second charge pump connected to said second MOSFET switch, said second charge pump generating a second control voltage, said second charge pump adjusting said second control voltage so that when said second MOSFET is conducting said bulk-source junction of said second MOSFET switch is forward biased; and a switched capacitor circuit electrically coupled to said first MOSFET switch and said second MOSFET switch, providing a translated output corresponding to a predetermined translation of said input voltage of said sensor to within said power supply voltage range of said processing component.

Claim 8

An input circuit as recited in claim 5 further comprising a third MOSFET switch coupled to said second MOSFET switch for preventing said second MOSFET switch from conducting current when the output voltage of said sensor is greater than said power supply voltage.

Claim 9

An input circuit as recited in claim 5 wherein said first MOSFET switch has a conducting state resistance, and wherein said charge pump maintains a predetermined conducting state resistance.

Claim 10

An input circuit as recited in claim 5 wherein said voltage buffer includes a source follower circuit.

Claim 11

An input circuit as recited in claim 5 further comprising a third charge pump, a PNP transistor, and a fourth MOSFET switch operatively connected to said first MOSFET switch, said third charge pump, said PNP transistor and said fourth MOSFET switch controlling said first MOSFET switch when said input voltage exceeds said power supply voltage.

Claim 12

An input circuit as recited in claim 5 further comprising a fourth MOSFET switch means, a comparator circuit, and a reference voltage, said comparator having an output, an inverting input, and a non-inverting input, said comparator output connected to said fourth MOSFET switch, said inverting terminal connected to said input voltage and said non-inverting terminal connected to said reference voltage said fourth MOSFET switch means coupling said comparator output to said first MOSFET switch means when said sensor output voltage is greater than said reference voltage.

Claim 13

An input circuit as recited in claim 10 wherein said reference voltage is half of said power supply voltage.

Claim 14

An input circuit for a processing component connected between an output of a sensor and said processing component, said sensor having a sensor output with a sensor voltage range referenced to ground, said processing component having a power supply voltage range, said circuit comprising: a first MOSFET switch having a first source terminal, a first game terminal, a first bulk terminal and a first drain terminal, said first source terminal coupled to said output of said sensor; a voltage buffer connected to said first bulk terminal, said voltage buffer having an output voltage of at least said sensor ground and greater than said output voltage of said sensor; a first charge pump connected to said first gate terminal generating a first gate voltage, said first charge pump selectively and continually adjusting said first gate voltage in relation to said output voltage of said sensor to prevent time dependent dielectric breakdown of said gate oxide layer; a second MOSFET switch having a second source terminal, a second gate terminal, a second bulk terminal and a second drain terminal, said second source terminal connected to said first drain terminal, said second drain terminal connected to said sensor ground, said second bulk terminal and said second source terminal forming a bulk-source junction, said second MOSFET switch having a conducting state resistance; a second charge pump connected to said second gate terminal controlling said second MOSFET switch so that when said second MOSFET is conducting said bulk-source junction of said second MOSFET switch is forward biased; and a switched capacitor circuit electrically connected to said first drain terminal and said second source terminal, providing a translated output corresponding to a predetermined translation of said input voltage of said sensor within said power supply voltage range of said processing component.

Claim 15

An input circuit for a processing component connected between an output of a sensor and said processing component, said sensor having a sensor output with a sensor voltage range referenced to ground, said processing component having a power supply voltage range, said circuit comprising: a first MOSFET switch having a first source terminal, a first game terminal, a first bulk terminal and a first drain terminal, said first source terminal coupled to said output of said sensor; a voltage buffer connected to said first bulk terminal, said voltage buffer having an output voltage of at least said sensor ground and greater than said output voltage of said sensor; a first charge pump connected to said first gate terminal generating a first gate voltage, said first charge pump selectively and continually adjusting said first gate voltage in relation to said output voltage of said sensor to prevent time dependent dielectric breakdown of said gate oxide layer; a second MOSFET switch having a second source terminal, a second gate terminal, a second bulk terminal and a second drain terminal, said second source terminal connected to said first drain terminal, said second drain terminal connected to said sensor ground, said second bulk terminal and said second source terminal forming a bulk-source junction, said second MOSFET switch having a conducting state resistance; a second charge pump connected to said second gate terminal controlling said second MOSFET switch so that when said second MOSFET is conducting said bulk-source junction of said second MOSFET switch is forward biased; and a switched capacitor circuit electrically connected to said first drain terminal and said second source terminal, providing a translated output corresponding to a predetermined translation of said input voltage of said sensor within said power supply voltage range of said processing component.

Claim 16

An input circuit as recited in claim 12 further comprising a third MOSFET switch coupled to said second MOSFET switch for preventing said second MOSFET switch from conducting current when the input voltage is greater than said power supply voltage.

Claim 17

An input circuit as recited in claim 12 wherein said first MOSFET switch has a conducting state resistance, and wherein said charge pump maintains a predetermined conducting state resistance.

Claim 18

An input circuit as recited in claim 14 wherein said switch capacitor circuit comprises a operational amplifier having an output terminal, an inverting input terminal, and a non-inverting input terminal, said operational amplifier having a first capacitor selectively switched between said inverting input terminal and said output terminal and said second capacitor connected to said inverting terminal of said operational amplifier and a reference voltage connected to said non-inverting terminal, said second capacitor capacitively coupling said switched capacitor circuit to said first MOSFET switch.

Claim 19

An input circuit as recited in claim 13 wherein said reference voltage is half of said power supply voltage.

Claim 20

An input circuit as recited in claim 12 wherein said voltage buffer including a source follower circuit.

Claim 21

An input circuit as recited in claim 12 further comprising a third charge pump, a PNP transistor, and a fourth MOSFET switch operatively connected to said first MOSFET switch, said third charge pump, said PNP transistor and said fourth MOSFET switch controlling said first MOSFET switch when said sensor output voltage exceeds said power supply voltage.

Claim 22

An input circuit as recited in claim 13 further comprising a fourth MOSFET switch means, and a comparator circuit, said comparator circuit providing a bulk voltage to said first MOSFET switch when said sensor output voltage exceeds the power supply voltage.

Claim 23

An input circuit as recited in claim 12 further comprising a fourth MOSFET switch means, a comparator circuit said comparator having an output, an inverting input, and a non-inverting input, said output connected to said fourth MOSFET switch, said inverting terminal connected to said input voltage and said non-inverting terminal connected to said reference voltage said fourth MOSFET switch means coupling said output to said first MOSFET switch means when said sensor output voltage is greater than said reference voltage.