Patent US5534110A successfully refreshed from Google Patents.
US5534110A
Expired / Lapsed
US
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Shadow clamp
Assignee: Lam Research Corp
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Filing: 1993-07-30
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Granted: 1996-07-09
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Expires: 2013-07-30
Abstract
Abstract A wafer clamping member for clamping a wafer in a plasma reaction chamber. The clamping member has a design which minimizes particle contamination of the wafer and allows more wafers to be processed before it is necessary to clean built-up deposits from the clamping member. The clamping member includes a clamping portion which clamps an outer periphery of the wafer against a bottom electrode and a shadow portion which provides a gap between an inner edge of the clamping member and the upper surface of the wafer. The gap is open to the interior of the plasma reaction chamber and preferably has a height equal to about a mean free path of a gas activated to form a plasma in the plasma reaction chamber.
Inventors
- 👤 Eric H. Lenz
- 👤 Henry Brumbach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:55
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/50; H10P72/70; H10P72/76; H10P72/7604; H10P72/7606; C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4585; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01; H01J; H01J2237/00; H01J2237/32; Y; Y10; Y10S; Y10S269/00; Y10S269/903; Y10S414/00; Y10S414/135; Y10S414/141
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
174 words
A method of treating a wafer in a plasma reaction chamber, the plasma reaction chamber including at least one bas inlet means for introducing processing gas into the reaction chamber and plasma generating means for activating the processing gas to form a plasma in the reaction chamber, comprising steps of: clamping a clamping member against an outer periphery of a wafer in the plasma reaction chamber, the clamping member including a clamping portion and a shadow portion, the clamping portion being clamped against the outer periphery of the wafer and the shadow portion extending over the wafer with a gap between the wafer and the shadow portion, the gap being in fluid communication with an interior of the plasma reaction chamber and the gap being dimensioned to prevent built-up deposits on an inner edge of the clamping member from contacting the wafer during the clamping step; and treating the wafer by introducing a plasma processing gas into the plasma reaction chamber and activating the processing gas with the plasma generating means to form plasma.
Claim 2
Independent Claim
174 words
A method of treating a wafer in a plasma reaction chamber, the plasma reaction chamber including at least one bas inlet means for introducing processing gas into the reaction chamber and plasma generating means for activating the processing gas to form a plasma in the reaction chamber, comprising steps of: clamping a clamping member against an outer periphery of a wafer in the plasma reaction chamber, the clamping member including a clamping portion and a shadow portion, the clamping portion being clamped against the outer periphery of the wafer and the shadow portion extending over the wafer with a gap between the wafer and the shadow portion, the gap being in fluid communication with an interior of the plasma reaction chamber and the gap being dimensioned to prevent built-up deposits on an inner edge of the clamping member from contacting the wafer during the clamping step; and treating the wafer by introducing a plasma processing gas into the plasma reaction chamber and activating the processing gas with the plasma generating means to form plasma.
Claim 3
Dependent Claim
37 words
The method of claim 1, further comprising a cleaning step wherein built-up deposits are removed from the clamping member when the deposits substantially close the gap between the wafer and the shadow portion of the clamping member.
Claim 4
Dependent Claim
143 words
A clamp for clamping a wafer in a plasma reaction chamber, comprising: a clamping member including a clamping portion and a shadow portion, the shadow portion extending radially inward from the clamping portion, the clamping portion including means for clamping against an upper surface on an outer periphery of a wafer in a plasma reaction chamber and the shadow portion including means for forming an open gap between the wafer and the shadow portion such that the gap is open and in fluid communication with an interior of the plasma reaction chamber, the clamping member including first, second and third concentrically arranged and vertically offset surfaces extending continuously around a lower side thereof, the first surface being located on the shadow portion, the second surface being located on the clamping portion, and the third surface being located radially outward from the second surface.
Claim 5
Dependent Claim
143 words
A clamp for clamping a wafer in a plasma reaction chamber, comprising: a clamping member including a clamping portion and a shadow portion, the shadow portion extending radially inward from the clamping portion, the clamping portion including means for clamping against an upper surface on an outer periphery of a wafer in a plasma reaction chamber and the shadow portion including means for forming an open gap between the wafer and the shadow portion such that the gap is open and in fluid communication with an interior of the plasma reaction chamber, the clamping member including first, second and third concentrically arranged and vertically offset surfaces extending continuously around a lower side thereof, the first surface being located on the shadow portion, the second surface being located on the clamping portion, and the third surface being located radially outward from the second surface.
Claim 6
Dependent Claim
56 words
The clamp of claim 3, wherein the first, second and third surfaces are planar surfaces and the gap is dimensioned such that an inner edge of the clamp is spaced from the wafer by a distance equal to about a mean free path of a gas activated to form a plasma in the plasma reaction chamber.
Claim 7
Dependent Claim
39 words
The clamp of claim 3, wherein the gap has a length in a direction parallel to the major surface of the wafer greater than a height of the gap between the wafer and an inner edge of the clamp.
Claim 8
Dependent Claim
17 words
The clamp of claim 5, wherein the length is at least two times greater than the height.
Claim 9
Dependent Claim
17 words
The clamp of claim 5, wherein the length is at least five times greater than the height.
Claim 10
Dependent Claim
26 words
The clamp of claim 5, wherein the height is equal to about a mean free path of a reactant gas used in the plasma reaction chamber.
Claim 11
Dependent Claim
34 words
The clamp of claim 3, wherein the clamping member comprises first and second separate pieces, the clamping portion being part of the first piece and the shadow portion being part of the second piece.
Claim 12
Dependent Claim
44 words
The clamp of claim 9, wherein the second piece includes a support surface and a shadow surface, the support surface being attached to the first piece and the shadow surface being an exposed surface extending away from the first piece and facing the wafer.
Claim 13
Dependent Claim
29 words
The clamp of claim 3, wherein the gap has a height of 0.005 to 0.030 inch between the wafer and a surface of the shadow portion facing the wafer.
References Cited (Backward Citations)
US4615755A
Cited
US5262029A
Cited
US4978412A
Cited
US5013400A
Cited
JPH046849A
Cited
JPH04107822A
Cited
US5203981A
Cited
JPH055342A
Cited
JPH05109879A
Cited
US5268067A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-09 | 2000-01-08 | 2000-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-09 | 2004-01-08 | 2004-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-09 | 2008-01-08 | 2008-07-09 | $7700.00 | Window Closed / Lapsed |