US5532062A
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Low emissivity film
Assignee: AGC Inc
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Filing: 1994-09-14
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Granted: 1996-07-02
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Expires: 2014-09-14
Abstract
Abstract A low emissivity film comprises a coating of an oxide film, a metal film, an oxide film and so on alternately formed on a substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with at least one selected from the group consisted of Si, Ti, Cr, B, Mg, Sn and Ga by 1 through 10 atomic % with respect to a total amount including Zn.
Inventors
- 👤 Masami Miyazaki
- 👤 Eiichi Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:51
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/34; C03C17/36; C03C17/3602; C03C17/3613; C03C17/3618; C03C17/3639; C03C17/3644; C03C17/3657; C03C17/366; C03C17/3681; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; C23C14/14; C23C14/18; G; G02; G02B; G02B5/00; G02B5/20; G02B5/208; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24942
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
160 words
A low emissivity film comprising: a substrate and a coating of an oxide film, a metal film, an oxide film and so on alternately formed on said substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from said substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with at least one dopant selected from the group consisting of Si, Ti, Cr, B, Mg and Ga by 1 through 10 atomic % with respect to the total amount of dopant and Zn, said oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate having a thickness of 200 to 700 Å and said metal film having a thickness of 50 to 160 Å.
Claim 2
Dependent Claim
160 words
A low emissivity film comprising: a substrate and a coating of an oxide film, a metal film, an oxide film and so on alternately formed on said substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from said substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with at least one dopant selected from the group consisting of Si, Ti, Cr, B, Mg and Ga by 1 through 10 atomic % with respect to the total amount of dopant and Zn, said oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate having a thickness of 200 to 700 Å and said metal film having a thickness of 50 to 160 Å.
Claim 3
Dependent Claim
58 words
The low emissivity film according to claim 1, wherein the oxide film (B) contains at least one layer of a zinc oxide film doped with at least one dopant selected from the group consisting of Si, Ti, Cr, B, Mg and Ga by 2 through 6 atomic % with respect to the total amount of dopant and Zn.
Claim 4
Dependent Claim
22 words
The low emissivity film according to claim 1, wherein the metal film (A) is a metal film whose major component is Ag.
Claim 5
Dependent Claim
61 words
The low emissivity film according to claim 1, wherein the crystal structure of the zinc oxide of the zinc oxide film is hexagonal and a value of a diffraction angle 2θ (center of gravity position) of (002) diffraction line of the hexagonal zinc oxide in X-ray diffraction method using CuKα radiation is not smaller than 33.88° and not larger than 35.00°.
Claim 6
Dependent Claim
51 words
The low emissivity film according to claim 1, wherein a value of a diffraction angle 2θ (center of gravity position) of (002) diffraction line of a hexagonal zinc oxide of the zinc oxide film in X-ray diffraction method using CuKα radiation is not smaller than 34.00° and not larger than 34.88°.
Claim 7
Dependent Claim
62 words
The low emissivity film according to claim 1, wherein at least one layer of oxide films other than the oxide film (B) is a zinc oxide film doped with at least one dopant selected from the group consisting of Si, Ti, Cr, B, Mg and Ga by 1 through 10 atomic % with respect to the total amount of dopant and Zn.
Claim 8
Dependent Claim
62 words
The low emissivity film according to claim 1, wherein at least one layer of oxide films other than the oxide film (B) is a zinc oxide film doped with at least one dopant selected from the group consisting of Si, Ti, Cr, B, Mg and Ga by 2 through 6 atomic % with respect to the total amount of dopant and Zn.
Claim 9
Dependent Claim
64 words
A low emissivity film according to claim 3, wherein an integral width βi(°) of (111) diffraction line of a cubic Ag in an X-ray diffraction diagram of the low emissivity film exists in a first range of 180λ/(dπcosθ)≦βi≦180λ/(dπcos.theta.)+0.15, where d(A) designates a thickness of a film whose major component is Ag, λ(Å), a wave length of an X-ray for measurement and θ, Bragg angle.
Claim 10
Dependent Claim
20 words
The low emissivity film according to claim 8, wherein the integral width βi(°) exists in a second range of 180λ/(dπcosθ)≦βi≦180λ/(dπcos.theta.)+0.10.
Claim 11
Dependent Claim
20 words
The low emissivity film according to claim 8, wherein the integral width βi(°) exists in a third range of 180λ/(dπcosθ)≦βi≦180λ/(dπcos.theta.)+0.05.
Claim 12
Dependent Claim
38 words
A low emissivity film according to claim 4, wherein an integral width βi(°) of (111) diffraction line of a cubic Ag in an X-ray diffraction diagram of the low emissivity film exists in a first range of 180λ/(dπcosθ)≦βi≦180λ/(dπcos.theta.)+0.15.
Claim 13
Dependent Claim
20 words
The low emissivity film according to claim 11, wherein the integral width βi(°) exists in a second range of 180λ/(dπcosθ)≦βi≦180λ/(dπcos.theta.)+0.10.
Claim 14
Dependent Claim
20 words
The low emissivity film according to claim 11, wherein the integral width βi(°) exists in a third range of 180λ/(dπcosθ)≦βi≦180λ/(dπcos.theta.)+0.05.
Claim 15
Dependent Claim
51 words
The low emissivity film according to claim 1, wherein a layer being most remote from the substrate among a plurality of layers composing the oxide film (B) is a controlling layer for controlling adhesive strength between the low emissivity film and an intermediate plastic film interposed for lamination with another substrate.
Claim 16
Dependent Claim
13 words
The low emissivity film according to claim 1, wherein the dopant is Si.
Claim 17
Dependent Claim
13 words
The low emissivity film according to claim 1, wherein the dopant is Ti.
Claim 18
Dependent Claim
13 words
The low emissivity film according to claim 1, wherein the dopant is Cr.
Claim 19
Dependent Claim
13 words
The low emissivity film according to claim 1, wherein the dopant is B.
Claim 20
Dependent Claim
13 words
The low emissivity film according to claim 1, wherein the dopant is Mg.
Claim 21
Dependent Claim
143 words
A low emissivity film comprising: a substrate and a coating of an oxide film, a metal film, an oxide film and so on alternately formed on said substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from said substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with Sn by 2 through 6 atomic % with respect to the total amount of dopant and zinc, said oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate having a thickness of 200 to 700 and said metal film having a thickness of 50 to 160 Å.
Claim 22
Dependent Claim
143 words
A low emissivity film comprising: a substrate and a coating of an oxide film, a metal film, an oxide film and so on alternately formed on said substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from said substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with Sn by 2 through 6 atomic % with respect to the total amount of dopant and zinc, said oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate having a thickness of 200 to 700 and said metal film having a thickness of 50 to 160 Å.
Claim 23
Dependent Claim
13 words
The low emissivity film according to claim 1, wherein the dopant is Ga.
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