Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate

Claim 1

A method of manufacturing a semiconductor device comprising a vertical insulated gate field effect device, which method comprises providing a semiconductor body having a first region of one conductivity type adjacent one major surface, providing a first mask on the one major surface to define a first mask aperture forming a regular mesh, introducing impurities through the first mask to form a relatively lowly doped first area of the opposite conductivity type which will subsequently provide a number of relatively lowly doped first portions of second regions of the opposite conductivity type, introducing further impurities through the first mask aperture to form a second area of the one conductivity type which will subsequently provide a number of third regions of the one conductivity type, providing a second mask on the one major surface having a mask window defining a regular mesh over the second area, etching the semiconductor body through the second mask to define a mesh-like trench extending through the first and second areas into the first region thereby splitting the first and second areas into the first portions of the second regions and the third regions, respectively, providing an insulating layer on the trench surface and a conductive layer on the insulating layer to provide an insulated gate structure for controlling conduction between the first and third regions along a conduction channel area provided adjacent the trench by the relatively lowly doped portion of the second region, introducing impurities of the one conductivity type into the one major surface with a concentration insufficient to overdope the first portions of the second regions to provide fourth regions of the one conductivity type having a dopant concentration less than that of the third regions and greater than that of the first region and introducing impurities of the opposite conductivity type with a concentration insufficient to overdope the third regions to provide relatively highly doped second portions of the second regions with each second portion forming with the associated fourth region a pn junction which is reverse-biassed in at least one mode operation of the device and has a predetermined breakdown voltage for causing the device to breakdown in the vicinity of the pn junction away from the trench when a critical voltage is exceeded.

Claim 2

A method of manufacturing a semiconductor device comprising a vertical insulated gate field effect device, which method comprises providing a semiconductor body having a first region of one conductivity type adjacent one major surface, providing a first mask on the one major surface to define a first mask aperture forming a regular mesh, introducing impurities through the first mask to form a relatively lowly doped first area of the opposite conductivity type which will subsequently provide a number of relatively lowly doped first portions of second regions of the opposite conductivity type, introducing further impurities through the first mask aperture to form a second area of the one conductivity type which will subsequently provide a number of third regions of the one conductivity type, providing a second mask on the one major surface having a mask window defining a regular mesh over the second area, etching the semiconductor body through the second mask to define a mesh-like trench extending through the first and second areas into the first region thereby splitting the first and second areas into the first portions of the second regions and the third regions, respectively, providing an insulating layer on the trench surface and a conductive layer on the insulating layer to provide an insulated gate structure for controlling conduction between the first and third regions along a conduction channel area provided adjacent the trench by the relatively lowly doped portion of the second region, introducing impurities of the one conductivity type into the one major surface with a concentration insufficient to overdope the first portions of the second regions to provide fourth regions of the one conductivity type having a dopant concentration less than that of the third regions and greater than that of the first region and introducing impurities of the opposite conductivity type with a concentration insufficient to overdope the third regions to provide relatively highly doped second portions of the second regions with each second portion forming with the associated fourth region a pn junction which is reverse-biassed in at least one mode operation of the device and has a predetermined breakdown voltage for causing the device to breakdown in the vicinity of the pn junction away from the trench when a critical voltage is exceeded.