US5525813A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image sensor having TFT gate electrode surrounding the photoelectric conversion element
Assignee: Fujifilm Business Innovation Corp
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Filing: 1995-01-26
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Granted: 1996-06-11
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Expires: 2015-01-26
Abstract
Abstract An image sensor is reduced in size by combining a photoelectric conversion element with a transfer element thin film transistor (TFT). The photoelectric conversion element comprises a lamination including a metal electrode, a photoconductive layer and a transparent electrode. The TFT transfer element comprises a gate electrode, a drain electrode and a source electrode. In the image sensor, the metal electrode of the photoelectric conversion element also serves as the drain electrode of the TFT. In addition, the gate electrode is formed around the photoelectric conversion element, and the source electrode is formed around the gate electrode.
Inventors
- 👤 Hiroyuki Miyake
- 👤 Kazuhiro Sakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:10
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6757
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
146 words
An image sensor comprising: a substrate; a photoelectric conversion element formed on said substrate for converting luminous energy to electric signals, said photoelectric conversion element defining a first area on a surface of said substrate underlying and being coextensive with said photoelectric conversion element; and a thin-film switching transistor formed on said substrate, said thin-film switching transistor having a control electrode formed adjacent an edge portion of said photoelectric conversion element, the control electrode for at times conducting said electric signals from said photoelectric conversion element through a gate area underlying and coextensive with said control electrode, in response to application of a voltage applied thereto, said control electrode of said thin-film switching transistor having a U-shaped configuration, said control electrode defining a second area in said surface of said substrate underlying and coextensive with said control electrode, said second area substantially surrounding said first area.
Claim 2
Dependent Claim
146 words
An image sensor comprising: a substrate; a photoelectric conversion element formed on said substrate for converting luminous energy to electric signals, said photoelectric conversion element defining a first area on a surface of said substrate underlying and being coextensive with said photoelectric conversion element; and a thin-film switching transistor formed on said substrate, said thin-film switching transistor having a control electrode formed adjacent an edge portion of said photoelectric conversion element, the control electrode for at times conducting said electric signals from said photoelectric conversion element through a gate area underlying and coextensive with said control electrode, in response to application of a voltage applied thereto, said control electrode of said thin-film switching transistor having a U-shaped configuration, said control electrode defining a second area in said surface of said substrate underlying and coextensive with said control electrode, said second area substantially surrounding said first area.
Claim 3
Dependent Claim
31 words
An image sensor according to claim 1, wherein said photoelectric conversion element includes: a metal electrode; a photoconductive layer overlaying said metal electrode; and a transparent electrode overlaying said photoconductive layer.
Claim 4
Dependent Claim
14 words
An image sensor according to claim 2, wherein said photoconductive layer includes amorphous silicon.
Claim 5
Dependent Claim
17 words
An image sensor according to claim 1 further comprising resetting means for resetting said photoelectric conversion element.
Claim 6
Dependent Claim
42 words
An image sensor according to claim 4 wherein said resetting means includes another thin-film transistor having a control electrode for performing said resetting in response to application of a voltage to said control electrode, said control electrode surrounding said photoelectric conversion element.
Claim 7
Dependent Claim
37 words
An image sensor according to claim 1 further comprising a gate pulse generating means connected to a gate of said thin-film switching transistor for applying a gate pulse to said thin-film switching transistor to render it conductive.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-11 | 1999-12-11 | 2000-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-11 | 2003-12-11 | 2004-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-11 | 2007-12-11 | 2008-06-11 | $7700.00 | Window Closed / Lapsed |