US4979007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoelectric conversion device
Assignee: Toshiba TEC Corp
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Filing: 1989-03-28
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Granted: 1990-12-18
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Expires: 2009-03-28
Abstract
Abstract An image sensor including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.
Inventors
- 👤 Minoru Ogawa
- 👤 Koichiro Sakamoto
- 👤 Toshiyuki Tamura
- 👤 Kazushige Katsuumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:25
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/18
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
120 words
An image sensor comprising: an insulating substrate having a plurality of thin film transistor regions and photosensor regions; a plurality of gate electrodes for each of the thin film transistor regions provided on a portion of the surface of said substrate by a thin film technique; a continuous layer of insulating film of SiN x deposited on said substrate and over said gate electrodes in both the thin film transistor regions and the photosensor regions; a uniform thickness a-Si film deposited on said insulating SiN x film for said thin film transistor regions and the photosensor regions and counter electrodes deposited on said a-Si film for said photosensor regions and source and drain electrodes for said thin film transistor regions.
Claim 2
Dependent Claim
120 words
An image sensor comprising: an insulating substrate having a plurality of thin film transistor regions and photosensor regions; a plurality of gate electrodes for each of the thin film transistor regions provided on a portion of the surface of said substrate by a thin film technique; a continuous layer of insulating film of SiN x deposited on said substrate and over said gate electrodes in both the thin film transistor regions and the photosensor regions; a uniform thickness a-Si film deposited on said insulating SiN x film for said thin film transistor regions and the photosensor regions and counter electrodes deposited on said a-Si film for said photosensor regions and source and drain electrodes for said thin film transistor regions.
Claim 3
Dependent Claim
21 words
An image sensor according to claim 1, wherein said a-Si film is provided with a thickness of 0.6 μm or above.
Claim 4
Dependent Claim
35 words
An image sensor according to claim 1, wherein an additional n+ a-Si film, in the same pattern as said source and drain electrodes, is formed between said a-Si film and said source and drain electrodes.
Claim 5
Dependent Claim
122 words
An image sensor comprising: an insulating substrate having a plurality of thin film transistor regions and photosensor regions; gate electrodes for each of the thin film transistor regions provided on the surface of said substrate, by a thin film technique; a continuous layer SiN x insulating film deposited on said substrate and over said gate electrodes in both the thin film regions and the photosensor regions; a uniform thickness a-Si film deposited on said insulating film so as to be in contact with each of said thin film transistor and each of said photosensor regions; and counter electrodes deposited on said a-Si film for each of said photosensor regions and source and drain electrodes for each of said thin film transistor regions.
Claim 6
Dependent Claim
122 words
An image sensor comprising: an insulating substrate having a plurality of thin film transistor regions and photosensor regions; gate electrodes for each of the thin film transistor regions provided on the surface of said substrate, by a thin film technique; a continuous layer SiN x insulating film deposited on said substrate and over said gate electrodes in both the thin film regions and the photosensor regions; a uniform thickness a-Si film deposited on said insulating film so as to be in contact with each of said thin film transistor and each of said photosensor regions; and counter electrodes deposited on said a-Si film for each of said photosensor regions and source and drain electrodes for each of said thin film transistor regions.
Claim 7
Dependent Claim
137 words
An image sensor comprising: an insulating substrate having a plurality of photosensor regions and thin film transistor regions; gate electrodes for each of the thin film transistor regions provided on the surface of said substrate by a thin film technique; a reflecting film for each of the sensor regions provided on the surface of said substrate at the same time as said gate electrodes is provided by a thin film technique; a continuous layer SiN X insulating film deposited on said substrate and over said gate electrodes; a uniform thickness a-Si film deposited on said SiN X insulating film for said thin film transistor regions and photosensor regions so as to cover both regions; and counter electrodes deposited on said a-Si film for said photosensor regions and source and drain electrodes for said thin film transistor regions.
Claim 8
Dependent Claim
137 words
An image sensor comprising: an insulating substrate having a plurality of photosensor regions and thin film transistor regions; gate electrodes for each of the thin film transistor regions provided on the surface of said substrate by a thin film technique; a reflecting film for each of the sensor regions provided on the surface of said substrate at the same time as said gate electrodes is provided by a thin film technique; a continuous layer SiN X insulating film deposited on said substrate and over said gate electrodes; a uniform thickness a-Si film deposited on said SiN X insulating film for said thin film transistor regions and photosensor regions so as to cover both regions; and counter electrodes deposited on said a-Si film for said photosensor regions and source and drain electrodes for said thin film transistor regions.
Claim 9
Dependent Claim
138 words
An image sensor comprising: an insulating substrate having a plurality of thin film sensor regions and photo transistor regions; lead patterns formed on the surface of said substrate by a thin film technique constituting a wiring pattern in a matrix and a gate wiring pattern including gate electrodes for each of the thin film transistor regions; a continuous layer SiN X insulating film deposited on said substrate and over said lead patterns; a uniform thickness a-Si film deposited on said insulating SiN X film for each said thin film transistor regions and photosensor regions; counter electrodes deposited on said a-Si film for each of said photosensor regions and source and drain electrodes for said thin film transistor regions; and through holes made in said insulating film for connecting said counter electrodes with said lead pattern at predetermined portions.
Claim 10
Dependent Claim
138 words
An image sensor comprising: an insulating substrate having a plurality of thin film sensor regions and photo transistor regions; lead patterns formed on the surface of said substrate by a thin film technique constituting a wiring pattern in a matrix and a gate wiring pattern including gate electrodes for each of the thin film transistor regions; a continuous layer SiN X insulating film deposited on said substrate and over said lead patterns; a uniform thickness a-Si film deposited on said insulating SiN X film for each said thin film transistor regions and photosensor regions; counter electrodes deposited on said a-Si film for each of said photosensor regions and source and drain electrodes for said thin film transistor regions; and through holes made in said insulating film for connecting said counter electrodes with said lead pattern at predetermined portions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-17 | 1994-06-18 | 1994-12-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-17 | 1998-06-18 | 1998-12-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-17 | 2002-06-18 | 2002-12-18 | $7700.00 | Window Closed / Lapsed |