Thin film image pickup element

Claim 2

A thin film image pickup element comprising: a transparent electrode, at least a first semiconductor layer formed on a surface of said transparent electrode, an opaque electrode formed on at least a part of said at least first semiconductor layer, a first insulator covering said first semiconductor layer and said opaque electrode and having a contact hole reaching at least a part of said opaque electrode, a first switch electrode connected through said contact hole to said opaque electrode, a second switch electrode adjacent but not in contact with said first switch electrode, a further semiconductor layer covering said first and second switch electrodes and said first insulator layer to form a current channel between said first and second switch electrodes, a second insulator layer covering said first semiconductor layer, and a gate electrode disposed in contact with said second insulator layer so as to face said current channel.

Claim 3

The thin film image pickup element as defined in claim 1, wherein said first semiconductor layer is formed of amorphous silicon.

Claim 4

The thin film image pickup element as defined in claim 1, wherein said opaque electrode is formed of platinum in a size corresponding to a picture element unit of an original from which an image is to be picked up.

Claim 5

The thin film image pickup element as defined in claim 1, wherein a Schottky junction diode is formed at the junction between said first semiconductor layer and said opaque electrode.

Claim 6

The pickup element as defined in claim 1, wherein said transparent electrode, said first semiconductor layer, said opaque electrode and said first insulator layer together form a photoelectric converter.

Claim 7

The pickup element as defined in claim 1, further comprising a passivation film covering said gate electrode, wherein said first and second upper electrodes, said further semiconductor layer, said gate electrode and said passivation film covering on said gate electrode together form an FET transistor switching element.

Claim 8

The pickup element as defined in claim 1, further comprising a substrate of non-polished glass or ceramics formed adjacent said transparent electrode.

Claim 9

The pickup element as defined in claim 7, wherein a surface of said substrate contacting said transparent electrode is annealed at a predetermined temperature.

Claim 10

The pickup element as defined in claim 1, wherein said at least first semiconductor layer comprises a first semiconductor layer of one conductivity type and a second semiconductor layer of an opposite conductivity type.

Claim 11

The pickup element as defined in claim 9, wherein said first semiconductor layer is n-type and is in contact with said transparent electrode and said second semiconductor layer is p-type and is disposed between said first semiconductor layer and said opaque electrode.

Claim 12

A two-dimensional thin film image pickup device comprising: a transparent electrode; an opaque film formed on portions of said transparent electrode for interrupting light incident through said transparent electrode, said opaque film having a plurality of openings therein; at least a first semiconductor layer formed over said transparent electrode and said film; a plurality of opaque electrodes formed on said at least first semiconductor layer at predetermined intervals therebetween; a first insulator layer covering said at least first semiconductor layer and said opaque electrodes and having contact holes reaching the surface of said opaque electrodes; a plurality of first switch electrodes connected through the contact holes to said opaque electrodes; a plurality of second switch electrodes formed in contact with said first insulator layer adjacent but not in contact with said first switch electrodes; a further semiconductor layer covering said first and second switch electrodes and said first insulator layer to form current channels between said first and second switch electrodes; a second insulator layer covering said further semiconductor layer; and a plurality of gate electrodes disposed in contact with said second insulator layer and facing respective current channels for controlling the conduction of respective current channels between respective pairs of said first and second switch electrodes.

Claim 13

A two-dimensional thin film image pickup device comprising: a transparent electrode; an opaque film formed on portions of said transparent electrode for interrupting light incident through said transparent electrode, said opaque film having a plurality of openings therein; at least a first semiconductor layer formed over said transparent electrode and said film; a plurality of opaque electrodes formed on said at least first semiconductor layer at predetermined intervals therebetween; a first insulator layer covering said at least first semiconductor layer and said opaque electrodes and having contact holes reaching the surface of said opaque electrodes; a plurality of first switch electrodes connected through the contact holes to said opaque electrodes; a plurality of second switch electrodes formed in contact with said first insulator layer adjacent but not in contact with said first switch electrodes; a further semiconductor layer covering said first and second switch electrodes and said first insulator layer to form current channels between said first and second switch electrodes; a second insulator layer covering said further semiconductor layer; and a plurality of gate electrodes disposed in contact with said second insulator layer and facing respective current channels for controlling the conduction of respective current channels between respective pairs of said first and second switch electrodes.

Claim 14

The two-dimensional thin film image pickup device as defined in claim 11, wherein said opaque electrodes are so disposed as to block light incident through said opaque film openings.

Claim 15

The image pickup device as defined in claim 11, wherein a Schottky junction is formed at the junction between said at least first semiconductor layer and said opaque electrode.

Claim 16

The pickup device as defined in claim 11, wherein said transparent electrode, said at least first semiconductor layer, each of said opaque electrodes and said first insulator together form a photoelectric converter.

Claim 17

The pickup device as defined in claim 11, wherein each of said second switch electrodes is adjacent but not in contact with a respective one of said first switch electrodes to form a pair of first and second switch electrodes, and wherein said first insulator layer, each said pair of said first and second switch electrodes, said further semiconductor layer, said second insulator layer, and respective ones of said gate electrodes together form a switching element.

Claim 18

The pickup device as defined in claim 11, said pickup device having a back surface, said pickup device including wiring regions formed on said back surface of said image pickup device.

Claim 19

The pickup device as defined in claim 11, wherein a plurality of said first switch electrodes, a plurality of said second switch electrodes and a plurality of said gate electrodes overlie each opaque electrode.

Claim 20

The pickup device as defined in claim 11, wherein said at least first semiconductor layer comprises a first layer of one conductivity type and a second layer of an opposite conductivity type disposed between said first layer and opaque electrodes.

Claim 21

The pickup device as defined in claim 11, wherein said opaque film comprises a plurality of films arranged in a matrix.

Claim 22

The pickup device as claimed in claim 11, further comprising a plurality of X-axis wires each connected to a plurality of different second switch electrodes, an X-axis shift register for detecting signals in each of said X-axis wires, a plurality of Y-axis wires each connected to a plurality of different gate electrodes, and a Y-axis shift register for providing gate signals to said Y-axis wires.

Claim 23

A two-dimensional thin film image pickup device comprising: a transparent electrode; at least a first semiconductor layer formed over said transparent electrode; a plurality of opaque electrodes formed on said at least first semiconductor layer at predetermined intervals therebetween; a first insulator layer covering said at least first semiconductor layer and said opaque electrodes and having contact holes reaching the surface of said opaque electrodes; a plurality of first switch electrodes connected through the contact holes to said opaque electrodes; a plurality of second switch electrodes formed in contact with said first insulator layer adjacent but not in contact with said first switch electrodes; a further semiconductor layer covering said first and second switch electrodes and said first insulator layer to form current channels between said first and second switch electrodes; light-blocking means for preventing light from reaching said further semiconductor layer through said intervals between opaque electrodes; a second insulator layer covering said further semiconductor layer; and a plurality of gate electrodes disposed in contact with said second insulator layer and facing respective current channels for controlling the conduction of respective current channels between respective pairs of said first and second switch electrodes.

Claim 24

A two-dimensional thin film image pickup device comprising: a transparent electrode; at least a first semiconductor layer formed over said transparent electrode; a plurality of opaque electrodes formed on said at least first semiconductor layer at predetermined intervals therebetween; a first insulator layer covering said at least first semiconductor layer and said opaque electrodes and having contact holes reaching the surface of said opaque electrodes; a plurality of first switch electrodes connected through the contact holes to said opaque electrodes; a plurality of second switch electrodes formed in contact with said first insulator layer adjacent but not in contact with said first switch electrodes; a further semiconductor layer covering said first and second switch electrodes and said first insulator layer to form current channels between said first and second switch electrodes; light-blocking means for preventing light from reaching said further semiconductor layer through said intervals between opaque electrodes; a second insulator layer covering said further semiconductor layer; and a plurality of gate electrodes disposed in contact with said second insulator layer and facing respective current channels for controlling the conduction of respective current channels between respective pairs of said first and second switch electrodes.