EP0037244A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for fabricating a solid-state imaging device using photoconductive film
Assignee: Hitachi Ltd
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Filing: 1981-03-25
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Granted: —
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Expires: 2001-03-25
Abstract
Abstract A solid-state imaging device comprises a scanner IC having a two-dimensional matrix of switching transistors (17), on top of which are deposited a photoconductive film (28) and a transparent electrode (31). The photoconductive film is deposited (29) through an opening (25) in a shield plate or mask plate (26), so that it is not deposited over a scanning shift register (16). The transparent electrode (31) is then formed on top of the photoconductive film, either through the same or a different shield plate, or by photoetching. Voltages applied to the transparent electrode (31) therefore do not affect the shift register (16).
Inventors
- 👤 Norio Koike
- 👤 Toru Baji
- 👤 Toshihisa Tsukada
- 👤 Hideaki Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 08:06
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
105 words
A method for fabricating a solid-state imaging device wherein a photoconductive film (28) for photoelectric conversion to generate photocharges and a transparent electrode (31) are stacked on a scanner integrated circuit in which switching elements (17) and scanning shift registers (16) for scanning the switching elements are integrated; characterised in that the photoconductive film is formed by holding a shield plate (26, 26') in close contact with said scanner integrated circuit or with some spacing therefrom, the shield plate being open (25,25') in an area in which the photoconductive film is to be formed, and then depositing a photoconductive material onto said scanner integrated circuit.
Claim 2
Independent Claim
105 words
A method for fabricating a solid-state imaging device wherein a photoconductive film (28) for photoelectric conversion to generate photocharges and a transparent electrode (31) are stacked on a scanner integrated circuit in which switching elements (17) and scanning shift registers (16) for scanning the switching elements are integrated; characterised in that the photoconductive film is formed by holding a shield plate (26, 26') in close contact with said scanner integrated circuit or with some spacing therefrom, the shield plate being open (25,25') in an area in which the photoconductive film is to be formed, and then depositing a photoconductive material onto said scanner integrated circuit.
Claim 3
Dependent Claim
32 words
A method for fabricating a solid-state imaging device according to claim 1, wherein the open part (25,25') of said shield plate (26,26') corresponds to an area (24) of the switching element array.
Claim 4
Dependent Claim
31 words
A method for fabricating a solid-state imaging device according to claim 2, wherein said open part (25,25') of said shield plate (26,26') is smaller than the switching element array area (24).
Claim 5
Dependent Claim
46 words
A method for fabricating a solid-state imaging device according to claim 2, wherein an element and/or circuit (16) around the array of switching elements (17) is spaced from the switching element array area by at least the deposition fringe size (d ) of said photoconductive material.
Claim 6
Dependent Claim
59 words
A method for fabricating a solid-state imaging device according to claim 1, 2, 3 or 4, in which after the deposition of said photoconductive material (28), said transparent electrode (31) is formed by depositing a substance onto said photoconductive film using said shield plate (26,26') or a shield plate which is somewhat different therefrom in opening size or shape.
Claim 7
Dependent Claim
67 words
A method for fabricating a solid-state imaging device according to claim 1, 2, 3 or 4, in which after the deposition of said photoconductive material (28), said transparent electrode (31) is formed by depositing a substance onto said scanner integrated circuit provided with said photoconductive film (28), and the step of photoetching the deposited transparent electrode substance layer into a transparent electrode film in a predetermined shape.
Claim 8
Independent Claim
38 words
A method for fabricating a solid-state imaging device according to any one of the preceding claims, wherein the photoconductive film (28) is deposited onto an individual chip (14) after said chip has been separated from a wafer (12).
Claim 9
Dependent Claim
23 words
A method according to claim 7 wherein the photoconductive film is deposited after the chip (14) has been mounted on a package (32).
Claim 10
Independent Claim
29 words
A method according to any one of claims 1 to 6 wherein the photoconductive film (28) is deposited onto a plurality of chips (13) arrayed on a wafer (12).
References Cited (Backward Citations)
No citation records indexed.
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