Patent US5523596A successfully refreshed from Google Patents.
US5523596A
Expired / Lapsed
US
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Semiconductor device having capacitor and manufacturing method therefor
Assignee: VACHELLIA LLC
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Filing: 1995-03-14
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Granted: 1996-06-04
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Expires: 2015-03-14
Abstract
Abstract A capacitor includes a polycrystalline silicon layer 1 as a lower electrode layer, a dielectric layer 112, and a polycrystalline silicon layer 113 as an upper electrode layer. The dielectric layer 112 is formed by an oxynitride film 2, a silicon nitride film 3 and a top oxide film 4. A film thickness t 3 of the top oxide film 4 is controlled to be less than 20 Å. Capacitance of the capacitor can be increased while improving the duration of life of the dielectric layer, resulting in a highly reliable capacitor.
Inventors
- 👤 Makoto Ohi
- 👤 Hideaki Arima
- 👤 Natsuo Ajika
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:24
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
107 words
A semiconductor device having a capacitor, comprising: a first electrode layer formed on a semiconductor substrate, a dielectric layer formed on said first electrode layer, and a second electrode layer formed on said dielectric layer, said dielectric layer including: a silicon oxynitride film having a thickness in the range of 17 Å to 25 Å formed on said first electrode layer, a silicon nitride film having a thickness in the range of 20 Å to 50 Å formed on said oxynitride film, and a silicon oxide film formed on said nitride film and having a thickness in the range of 5 Å to less than 20 Å.
Claim 2
Dependent Claim
107 words
A semiconductor device having a capacitor, comprising: a first electrode layer formed on a semiconductor substrate, a dielectric layer formed on said first electrode layer, and a second electrode layer formed on said dielectric layer, said dielectric layer including: a silicon oxynitride film having a thickness in the range of 17 Å to 25 Å formed on said first electrode layer, a silicon nitride film having a thickness in the range of 20 Å to 50 Å formed on said oxynitride film, and a silicon oxide film formed on said nitride film and having a thickness in the range of 5 Å to less than 20 Å.
Claim 3
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said capacitor is capacitor in memory cell of DRAM.
Claim 4
Dependent Claim
103 words
A semiconductor device having a capacitor, comprising: a first electrode layer formed on a semiconductor substrate, a dielectric layer having an overall thickness in the range of 42 Å to less than 95 Å formed on said first electrode layer, and a second electrode layer formed on said dielectric layer, said dielectric layer including: a silicon oxynitride film formed on said first electrode layer, a silicon nitride film having a thickness in the range of 20 Å to 50 Å formed on said oxynitride film, and a silicon oxide film formed on said nitride film and having a thickness less than 20 Å.
Claim 5
Dependent Claim
103 words
A semiconductor device having a capacitor, comprising: a first electrode layer formed on a semiconductor substrate, a dielectric layer having an overall thickness in the range of 42 Å to less than 95 Å formed on said first electrode layer, and a second electrode layer formed on said dielectric layer, said dielectric layer including: a silicon oxynitride film formed on said first electrode layer, a silicon nitride film having a thickness in the range of 20 Å to 50 Å formed on said oxynitride film, and a silicon oxide film formed on said nitride film and having a thickness less than 20 Å.
Claim 6
Dependent Claim
17 words
The semiconductor device according to claim 3, wherein said capacitor is capacitor in memory cell of DRAM.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-04 | 1999-12-04 | 2000-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-04 | 2003-12-04 | 2004-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-04 | 2007-12-04 | 2008-06-04 | $7700.00 | Window Closed / Lapsed |