Patent US5518940A successfully refreshed from Google Patents.
US5518940A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing thin film transistors in a liquid crystal display
Assignee: Fujitsu Ltd
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Filing: 1995-01-05
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Granted: 1996-05-21
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Expires: 2015-01-05
Abstract
Abstract A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.
Inventors
- 👤 Mari Hodate
- 👤 Norihisa Matsumoto
- 👤 Kohji Ohgata
- 👤 Tamotsu Wada
- 👤 Ken-iti Yanai
- 👤 Ken-ichi Oki
- 👤 Yasuyoshi Mishima
- 👤 Michiko Takei
- 👤 Tatsuya Kakehi
- 👤 Masahiro Okabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D30/0223; H10D30/0227; H10D30/0321; H10D30/60; H10D30/601; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
73 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; and introducing impurities into said semiconductor layer using said gate electrode and said resist film as a mask.
Claim 2
Independent Claim
73 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; and introducing impurities into said semiconductor layer using said gate electrode and said resist film as a mask.
Claim 3
Dependent Claim
35 words
The method of manufacturing a semiconductor device according to claim 1, further comprising a step of introducing impurities into said semiconductor layer using said gate electrode as a mask before said resist film is formed.
Claim 4
Dependent Claim
39 words
The method of manufacturing a semiconductor device according to claim 1, wherein the film thickness of said resist film is regulated depending on the magnitude and the application period of time of the voltage applied to said gate electrode.
Claim 5
Dependent Claim
35 words
The method of manufacturing a semiconductor device according to claim 1, wherein said resist film is grown in a plurality of times separately, and said impurities are introduced into said semiconductor layer after every growth.
Claim 6
Dependent Claim
36 words
The method of manufacturing a semiconductor device according to claim 1, further comprising a step of introducing impurities again into said semiconductor layer with said gate electrode as a mask after said resist film is removed.
Claim 7
Dependent Claim
61 words
The method of manufacturing a semiconductor device according to claim 1, wherein, after melting said resist film by heating so as to extend the resist film in a transverse direction after said impurities are introduced into said semiconductor layer with said resist film as a mask, impurities are introduced again into said semiconductor layer with said resist film as a mask.
Claim 8
Independent Claim
97 words
A method of manufacturing a semiconductor device, comprising the steps of: forming gate electrodes through an insulating film in each of a plurality of active regions of a semiconductor layer; soaking said plurality of gate electrodes in an electrolyte containing resist and applying voltage to said gate electrode located in said active region that has been selected, thereby to form a resist film on both sides and a top of said gate electrode; and introducing impurities into said semiconductor layer in said plurality of active regions with said gate electrodes and said resist film as a mask.
Claim 9
Independent Claim
97 words
A method of manufacturing a semiconductor device, comprising the steps of: forming gate electrodes through an insulating film in each of a plurality of active regions of a semiconductor layer; soaking said plurality of gate electrodes in an electrolyte containing resist and applying voltage to said gate electrode located in said active region that has been selected, thereby to form a resist film on both sides and a top of said gate electrode; and introducing impurities into said semiconductor layer in said plurality of active regions with said gate electrodes and said resist film as a mask.
Claim 10
Dependent Claim
35 words
The method of manufacturing a semiconductor device according to claim 7, further comprising a step of introducing impurities into said semiconductor layer using said gate electrode as a mask before said resist film is formed.
Claim 11
Dependent Claim
39 words
The method of manufacturing a semiconductor device according to claim 7, wherein the film thickness of said resist film is regulated depending on the magnitude and the application period of time of the voltage applied to said gate electrode.
Claim 12
Dependent Claim
35 words
The method of manufacturing a semiconductor device according to claim 7, wherein said resist film is grown in a plurality of times separately, and said impurities are introduced into said semiconductor layer after every growth.
Claim 13
Dependent Claim
36 words
The method of manufacturing a semiconductor device according to claim 7, further comprising a step of introducing impurities again into said semiconductor layer with said gate electrode as a mask after said resist film is removed.
Claim 14
Dependent Claim
61 words
The method of manufacturing a semiconductor device according to claim 7, wherein, after melting said resist film by heating so as to extend the resist film in a transverse direction after said impurities are introduced into said semiconductor layer with said resist film as a mask, impurities are introduced again into said semiconductor layer with said resist film as a mask.
Claim 15
Independent Claim
94 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; applying patterning to said insulating film with said gate electrode as a mask; introducing impurities into said semiconductor layers with said gate electrode as a mask; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form resist films on both sides and a top of said gate electrode; and introducing impurities into said semiconductor layers with said resist films as a mask.
Claim 16
Independent Claim
94 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; applying patterning to said insulating film with said gate electrode as a mask; introducing impurities into said semiconductor layers with said gate electrode as a mask; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form resist films on both sides and a top of said gate electrode; and introducing impurities into said semiconductor layers with said resist films as a mask.
Claim 17
Independent Claim
97 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; applying patterning to said insulating film with said gate electrode as a mask; soaking said electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said electrode; introducing impurities into said semiconductor layers with said resist film as a mask; removing said resist film; and introducing impurities into said semiconductor layers with said gate electrode as a mask.
Claim 18
Independent Claim
97 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; applying patterning to said insulating film with said gate electrode as a mask; soaking said electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said electrode; introducing impurities into said semiconductor layers with said resist film as a mask; removing said resist film; and introducing impurities into said semiconductor layers with said gate electrode as a mask.
Claim 19
Independent Claim
107 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; applying patterning to said insulating film with said gate electrode and said resist film as a mask; introducing impurities into said semiconductor layer with said gate electrode and said resist film as a mask; removing said resist film; and introducing impurities into said semiconductor layer with said gate electrode as a mask.
Claim 20
Independent Claim
107 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; applying patterning to said insulating film with said gate electrode and said resist film as a mask; introducing impurities into said semiconductor layer with said gate electrode and said resist film as a mask; removing said resist film; and introducing impurities into said semiconductor layer with said gate electrode as a mask.
Claim 21
Independent Claim
128 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; applying patterning to said insulating film with said gate electrode and said resist film as a mask; removing said resist film; and introducing impurities into said semiconductor layer with said gate electrode as a mask and with energy that a part thereof passes through said insulating film that has been applied with patterning, thereby to form impurity regions in which impurity concentration is made higher gradually from the gate electrode toward the outside.
Claim 22
Independent Claim
128 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; applying patterning to said insulating film with said gate electrode and said resist film as a mask; removing said resist film; and introducing impurities into said semiconductor layer with said gate electrode as a mask and with energy that a part thereof passes through said insulating film that has been applied with patterning, thereby to form impurity regions in which impurity concentration is made higher gradually from the gate electrode toward the outside.
Claim 23
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 16, further comprising the steps of: forming a second resist film on the surface of said gate electrode using an electrolyte containing resist after impurities are introduced into said semiconductor layer; and introducing impurities into said semiconductor layer with said second resist film as a mask.
Claim 24
Independent Claim
126 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; applying patterning to said insulating film with said gate electrode and said resist film as a mask; and introducing impurities into said semiconductor layer with implantation energy that a part thereof penetrates through said resist film and said insulating film, thereby to form an impurity region in which the concentration of said impurities is made higher gradually from said gate electrode toward both sides thereof by introduction of impurities one time.
Claim 25
Independent Claim
126 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; applying patterning to said insulating film with said gate electrode and said resist film as a mask; and introducing impurities into said semiconductor layer with implantation energy that a part thereof penetrates through said resist film and said insulating film, thereby to form an impurity region in which the concentration of said impurities is made higher gradually from said gate electrode toward both sides thereof by introduction of impurities one time.
Claim 26
Independent Claim
111 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; etching said insulating film isotropically with said gate electrode and said resist film as a mask, thereby to form said insulating film under said resist film in a taper configuration; removing said resist film; and introducing impurities with said electrode as a mask and with implantation energy that a part thereof penetrates through said insulating film.
Claim 27
Independent Claim
111 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode on a semiconductor layer through an insulating film; soaking said gate electrode in an electrolyte containing resist, and applying voltage to said gate electrode, thereby to form a resist film on both sides and a top of said gate electrode; etching said insulating film isotropically with said gate electrode and said resist film as a mask, thereby to form said insulating film under said resist film in a taper configuration; removing said resist film; and introducing impurities with said electrode as a mask and with implantation energy that a part thereof penetrates through said insulating film.
Claim 28
Independent Claim
105 words
A method of manufacturing a liquid crystal display including a process of forming a pixel portion and a peripheral circuit having a TFT on a transparent substrate, comprising the steps of: forming a semiconductor layer on the transparent substrate of said pixel portion: forming a gate electrode of said TFT on said semiconductor layer through an insulating film; soaking said gate electrode in electrodeposition liquid containing resist and applying voltage to said gate electrode, thereby to form a resist film on the surface of said gate electrode; and introducing impurities into said semiconductor layer with said gate electrode and said resist film as a mask.
Claim 29
Independent Claim
105 words
A method of manufacturing a liquid crystal display including a process of forming a pixel portion and a peripheral circuit having a TFT on a transparent substrate, comprising the steps of: forming a semiconductor layer on the transparent substrate of said pixel portion: forming a gate electrode of said TFT on said semiconductor layer through an insulating film; soaking said gate electrode in electrodeposition liquid containing resist and applying voltage to said gate electrode, thereby to form a resist film on the surface of said gate electrode; and introducing impurities into said semiconductor layer with said gate electrode and said resist film as a mask.
Claim 30
Dependent Claim
74 words
The method of manufacturing a liquid crystal display according to claim 20, wherein a plurality of said gate electrodes are formed on said semiconductor layer, said plurality of gate electrodes are connected electrically to one generalization electrode through a plurality of gate bus lines in a state that said gate electrodes are soaked in said electrodeposition liquid containing resist, and said voltage is applied to said plurality of gate electrodes through said generalization electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-21 | 1999-11-20 | 2000-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-21 | 2003-11-20 | 2004-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-21 | 2007-11-20 | 2008-05-21 | $7700.00 | Window Closed / Lapsed |