Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration

Claim 2

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors; a pair of first bit lines each connected to a respective one of said first access transistors; and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection portion between each of said second driver transistors and each of said second load transistors; a pair of second bit lines each connected to a respective one of said second access transistors; and a second word line connected to a gate electrode of each of said second access transistors; wherein said first and second memory cells each have only a single pair of access transistors, and said first and second driver transistors and said first access transistors are of a first conductivity type, and said first and second load transistors and said second access transistors are of a second conductivity type.

Claim 3

A semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors; a pair of first bit lines each connected to a respective one of said first access transistors; and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection portion between each of said second driver transistors and each of said second load transistors; a pair of second bit lines each connected to a respective one of said second access transistors; and a second word line connected to a gate electrode of each of said second access transistors; and wherein said first and second driver transistors and said first access transistors are of a first conductivity type, and said first and second load transistors and said second access transistors are of a second conductivity type, the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, the number of transistors in the first layer is equal to the number of transistors in the second layer, and said second access transistors are located above the first access transistors.

Claim 4

A semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors; a pair of first bit lines each connected to a respective one of said first access transistors; and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection portion between each of said second driver transistors and each of said second load transistors; a pair of second bit lines each connected to a respective one of said second access transistors; and a second word line connected to a gate electrode of each of said second access transistors; and wherein said first and second driver transistors and said first access transistors are of a first conductivity type, and said first and second load transistors and said second access transistors are of a second conductivity type, the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, the number of transistors in the first layer is equal to the number of transistors in the second layer, and said second access transistors are located above the first access transistors.

Claim 5

A semiconductor memory device according to claim 1, wherein the transistors of said second conductivity type include an SOI transistor.

Claim 6

A semiconductor memory device according to claim 1, wherein the first and second driver transistors of said first conductivity type have a first interconnection pattern and the first and second load transistors of the second conductivity type have a second interconnection pattern, identical to said first interconnection pattern.

Claim 7

A semiconductor memory device according to claim 1, wherein said first memory cell is selected when said first word line attains a first potential level, and said second memory cell is selected when said second word line attains a second potential level.

Claim 8

A semiconductor memory device according to claim 1, wherein the transistors of said first conductivity type are n-channel MOS transistors, and the transistors of said second conductivity type are p-channel MOS transistors.

Claim 9

A semiconductor memory device according to claim 1, wherein one bit line of said first bit line pair being common with one bit line of said second bit line pair.

Claim 10

A semiconductor memory device comprising: a first memory cell being a 2/4 type; and a second memory cell being a 4/2 type, each of said first and second memory cells having driver transistors formed in a first layer and load transistors formed in a second layer with an insulator layer formed therebetween, a ground line formed in said first layer, a power supply line formed in said second layer, a first capacitor formed between the ground line and a first interconnection line connected between a first contact and a gate of one of the driver transistors through a second insulator layer, and a second capacitor formed between the power supply line and a second interconnection line connected between a second contact and a gate of one of the load transistors through a third insulator layer.

Claim 11

A semiconductor memory device comprising: a first memory cell being a 2/4 type; and a second memory cell being a 4/2 type, each of said first and second memory cells having driver transistors formed in a first layer and load transistors formed in a second layer with an insulator layer formed therebetween, a ground line formed in said first layer, a power supply line formed in said second layer, a first capacitor formed between the ground line and a first interconnection line connected between a first contact and a gate of one of the driver transistors through a second insulator layer, and a second capacitor formed between the power supply line and a second interconnection line connected between a second contact and a gate of one of the load transistors through a third insulator layer.

Claim 12

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors; a pair of first bit lines each connected to a respective one of said first access transistors; and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection between each of said second driver transistors and each of said second load transistors; a pair of second bit lines each connected to a respective one of said second access transistors; and a second word line connected to a gate electrode of each of said second access transistors; and wherein said first and second memory cells each have only a single pair of access transistors, said first and second driver transistors, one of said first access transistors and one of said second access transistors are only of a first conductivity type, and said first and second load transistors, the other of said first access transistors and the other of said second access transistors are only of a second conductivity type opposite to said first conductivity type.

Claim 13

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors; a pair of first bit lines each connected to a respective one of said first access transistors; and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection between each of said second driver transistors and each of said second load transistors; a pair of second bit lines each connected to a respective one of said second access transistors; and a second word line connected to a gate electrode of each of said second access transistors; and wherein said first and second memory cells each have only a single pair of access transistors, said first and second driver transistors, one of said first access transistors and one of said second access transistors are only of a first conductivity type, and said first and second load transistors, the other of said first access transistors and the other of said second access transistors are only of a second conductivity type opposite to said first conductivity type.

Claim 14

A semiconductor memory device according to claim 9, wherein the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

Claim 15

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes a pair of first driver transistors forming a part of a first flip-flop, a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors, first supply potential applying means connected to each of said first load transistors for applying a supply potential, first ground potential applying means connected to each of said first driver transistors for applying a ground potential, a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors, a pair of first bit lines each connected to a respective one of said first access transistors, and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes a pair of second driver transistors forming a part of a second flip-flop, a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors, second supply potential applying means connected to each of said second load transistors for applying a supply potential, second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection between each of said second driver transistors and each of said second load transistors, a pair of second bit lines each connected to a respective one of said second access transistors, and a second word line connected to a gate electrode of each of said second access transistors; and wherein said first and second driver transistors, one of said first access transistors and one of said second access transistors are of a first conductivity type; and said first and second load transistors, the other of said first access transistors and the other of said second access transistors are of a second conductivity type opposite to said first conductivity type, the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, and the other of said first access transistors is located above the one of the second access transistors.

Claim 16

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes a pair of first driver transistors forming a part of a first flip-flop, a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors, first supply potential applying means connected to each of said first load transistors for applying a supply potential, first ground potential applying means connected to each of said first driver transistors for applying a ground potential, a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors, a pair of first bit lines each connected to a respective one of said first access transistors, and a first word line connected to a gate electrode of each of said first access transistors; and said second memory cell includes a pair of second driver transistors forming a part of a second flip-flop, a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors, second supply potential applying means connected to each of said second load transistors for applying a supply potential, second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a pair of second access transistors each being connected to a connection between each of said second driver transistors and each of said second load transistors, a pair of second bit lines each connected to a respective one of said second access transistors, and a second word line connected to a gate electrode of each of said second access transistors; and wherein said first and second driver transistors, one of said first access transistors and one of said second access transistors are of a first conductivity type; and said first and second load transistors, the other of said first access transistors and the other of said second access transistors are of a second conductivity type opposite to said first conductivity type, the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, and the other of said first access transistors is located above the one of the second access transistors.

Claim 17

A static semiconductor memory device including a first memory cell land a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a first access transistor connected to a connection portion between one of said first driver transistors and one of said first load transistors; and a first word line connected to a gate electrode of said first access transistor: said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a second access transistor connected to a connection portion between one of said second driver transistors and one of said second load transistors; a second word line connected to a gate electrode of said second access transistors: and wherein said first and second memory cells each have only a single access transistor, each of said first and second access transistors are connected to a common bit line, said first and second driver transistors and said second access transistor are of a first conductivity type, and said first and second load transistors and said first access transistor are of a second conductivity type opposite to said first conductivity type.

Claim 18

A static semiconductor memory device including a first memory cell land a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a first access transistor connected to a connection portion between one of said first driver transistors and one of said first load transistors; and a first word line connected to a gate electrode of said first access transistor: said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a second access transistor connected to a connection portion between one of said second driver transistors and one of said second load transistors; a second word line connected to a gate electrode of said second access transistors: and wherein said first and second memory cells each have only a single access transistor, each of said first and second access transistors are connected to a common bit line, said first and second driver transistors and said second access transistor are of a first conductivity type, and said first and second load transistors and said first access transistor are of a second conductivity type opposite to said first conductivity type.

Claim 19

A semiconductor memory device according to claim 12, wherein said transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and said transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

Claim 20

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a first access transistor connected to a connection portion between one of said first driver transistors and one of said first load transistors; and a first word line connected to a gate electrode of said first access transistor; said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a second access transistor connected to a connection portion between one of said second driver transistors and one of said second load transistors; a second word line connected to a gate electrode of said second access transistors; wherein each of said first and second access transistors are connected to a common bit line, said first and second driver transistors and said second access transistor are of a first conductivity type, and said first and second load transistors and said first access transistor are of a second conductivity type opposite to said first conductivity type, said transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and said transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, and said first access transistor is located above said second access transistor.

Claim 21

A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein said first memory cell includes: a pair of first driver transistors forming a part of a first flip-flop; a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors; first supply potential applying means connected to each of said first load transistors for applying a supply potential; first ground potential applying means connected to each of said first driver transistors for applying a ground potential; a first access transistor connected to a connection portion between one of said first driver transistors and one of said first load transistors; and a first word line connected to a gate electrode of said first access transistor; said second memory cell includes: a pair of second driver transistors forming a part of a second flip-flop; a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors; second supply potential applying means connected to each of said second load transistors for applying a supply potential; second ground potential applying means connected to each of said second driver transistors for applying a ground potential; a second access transistor connected to a connection portion between one of said second driver transistors and one of said second load transistors; a second word line connected to a gate electrode of said second access transistors; wherein each of said first and second access transistors are connected to a common bit line, said first and second driver transistors and said second access transistor are of a first conductivity type, and said first and second load transistors and said first access transistor are of a second conductivity type opposite to said first conductivity type, said transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and said transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, and said first access transistor is located above said second access transistor.

Claim 22

A memory cell structure of a semiconductor memory device using transistors which form a flip-flop, for storing information, said memory cell structure comprising: a pair of driver transistors forming a part of said flip-flop; and a pair of load transistors forming another part of said flip-flop and each being connected to each of said driver transistors, said memory cell structure having only a single transfer gate formed of a transistor of a first conductivity type and a second transistor of a second conductivity type opposite to said first conductivity type, and being connected to a connection portion between one of said driver transistors and one of said load transistors for transferring the potential of said connection portion to a bit line, wherein said driver transistors are of said first conductivity type, and said load transistors are of said second conductivity type, and wherein the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

Claim 23

A memory cell structure of a semiconductor memory device using transistors which form a flip-flop, for storing information, said memory cell structure comprising: a pair of driver transistors forming a part of said flip-flop; and a pair of load transistors forming another part of said flip-flop and each being connected to each of said driver transistors, said memory cell structure having only a single transfer gate formed of a transistor of a first conductivity type and a second transistor of a second conductivity type opposite to said first conductivity type, and being connected to a connection portion between one of said driver transistors and one of said load transistors for transferring the potential of said connection portion to a bit line, wherein said driver transistors are of said first conductivity type, and said load transistors are of said second conductivity type, and wherein the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

Claim 24

A memory cell structure according to claim 15, further comprising: supply potential applying means connected to each of said load transistors for applying a supply potential; and ground potential applying means connected to each of said driver transistors for applying a ground potential.

Claim 25

A memory cell structure according to claim 15, wherein the transfer gate transistor of said first conductivity type has a gate electrode connected to a word line; and the transfer gate transistor of said second conductivity type has a gate electrode connected to another word line.

Claim 26

A memory cell structure according to claim 15, wherein said load transistors are located above said driver transistors, and the transistors of said second conductivity type are located above the transistors of said first conductivity type; and the second transistor of a second conductivity type of the transfer gate is located above the transistor of a first conductivity type of the transfer gate.

Claim 27

A photo sensor formed of a first element unit and a second element unit neighboring to said first element unit, wherein said first element unit includes: a first CCD and a first access transistor which are formed in a first layer and are connected to each other; a first photo detector formed in a second layer; and a first contact connecting said access transistor to said first photo detector: and said second element unit includes: a second CCD formed in said first layer; a second photo detector and a second access transistor which are formed in said second layer and are connected to each other; and a second contact connecting said second CCD to said second access transistor.

Claim 28

A photo sensor formed of a first element unit and a second element unit neighboring to said first element unit, wherein said first element unit includes: a first CCD and a first access transistor which are formed in a first layer and are connected to each other; a first photo detector formed in a second layer; and a first contact connecting said access transistor to said first photo detector: and said second element unit includes: a second CCD formed in said first layer; a second photo detector and a second access transistor which are formed in said second layer and are connected to each other; and a second contact connecting said second CCD to said second access transistor.

Claim 29

A semiconductor device of a static RAM comprising: a first memory cell including a pair of load transistors, a pair of driver transistors, and a pair of access transistors; and a second memory cell neighboring to said first memory cell including a pair of load transistors, a pair of driver transistors, and a pair of access transistors, wherein two pairs of transistors of said first memory cell are formed in a first layer, a pair of transistors of said first memory cell is formed in a second layer above said first layer, a pair of transistors of said second memory cell is formed in said first layer, and two pairs of transistors of said second memory cell are formed in said second layer, wherein said pair of load transistors of said first memory cell are formed in said second layer directly over said pair of driver transistors of said first memory cell formed in said first layer, said pair of load transistors of said second memory cell are formed in said second layer directly over said pair of driver transistors of said second memory cell formed in said first layer, and said pair of access transistors of said first memory cell are formed in said first layer and said pair of access transistors of said second memory cell are formed in said second layer with at least a portion of said pair of access transistors of said second memory cell directly over said pair of access transistors of said first memory cell.

Claim 30

A semiconductor device of a static RAM comprising: a first memory cell including a pair of load transistors, a pair of driver transistors, and a pair of access transistors; and a second memory cell neighboring to said first memory cell including a pair of load transistors, a pair of driver transistors, and a pair of access transistors, wherein two pairs of transistors of said first memory cell are formed in a first layer, a pair of transistors of said first memory cell is formed in a second layer above said first layer, a pair of transistors of said second memory cell is formed in said first layer, and two pairs of transistors of said second memory cell are formed in said second layer, wherein said pair of load transistors of said first memory cell are formed in said second layer directly over said pair of driver transistors of said first memory cell formed in said first layer, said pair of load transistors of said second memory cell are formed in said second layer directly over said pair of driver transistors of said second memory cell formed in said first layer, and said pair of access transistors of said first memory cell are formed in said first layer and said pair of access transistors of said second memory cell are formed in said second layer with at least a portion of said pair of access transistors of said second memory cell directly over said pair of access transistors of said first memory cell.