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Polysilicon thin film with a particulate product of SiOx

Assignee: Kanegafuchi Chemical Industry Co Ltd
•
Filing: 1993-03-23
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Granted: 1996-05-14
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Expires: 2013-03-23
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Abstract

Abstract PCT No. PCT/JP93/00338 Sec. 371 Date Nov. 23, 1993 Sec. 102(e) Date Nov. 23, 1993 PCT Filed Mar. 23, 1993 PCT Pub. No. WO93/19022 PCT Pub. Date Sep. 30, 1992.The polysilicon thin film of the present invention is formed on a glass substrate or the like having a particulate product of SiOx (0<x</=2) of size not more than 100 ANGSTROM , for example, dispersed into not more than 100 pieces in an area of 0.1 mu m square. Furthermore, in the production method of a polysilicon thin film of the present invention, a particulate product of SiOx (0<x</=2) of size not more than 100 ANGSTROM , for example, dispersed into not more than 100 pieces in an area of 0.1 mu m square, is formed on a substrate, and thereafter a polysilicon thin film is grown using this particulate product as a nucleus.

Inventors

  • 👤 Kenji Yamamoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 16:18
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/22; C03C2217/00; C03C2217/20; C03C2217/28; C03C2217/282; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/17; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/093

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 56 words
An article comprising a substrate, an amorphous silicon film formed on said substrate, and a polysilicon thin film formed on said amorphous silicon film, said amorphous silicon film having a thickness of not more than 100 Å, said amorphous silicon film comprising particulate products of SiO x (0<x≦2) of grain size not more than 100 Å.
Claim 2
Dependent Claim 56 words
An article comprising a substrate, an amorphous silicon film formed on said substrate, and a polysilicon thin film formed on said amorphous silicon film, said amorphous silicon film having a thickness of not more than 100 Å, said amorphous silicon film comprising particulate products of SiO x (0<x≦2) of grain size not more than 100 Å.
Claim 3
Dependent Claim 36 words
The polysilicon thin film of claim 1 wherein not more than 100 pieces of the SiO x particulate product of grain size not more than 100 Å are dispersed in an area of 0.1 μm square.
Claim 4
Dependent Claim 34 words
The polysilicon thin film of claims 1 or 2, wherein the SiO x particulate product is formed by processing using plasma CVD of a gas mixture comprising a silane-series gas and an oxygen-series gas.
Claim 5
Dependent Claim 26 words
The polysilicon thin film of claim 3 wherein the silane-series gas comprises SiH 4 gas, Si 2 H 6 gas or a gas mixture of these.
Claim 6
Dependent Claim 29 words
The polysilicon thin film of claim 3 wherein the oxygen-series gas comprises N 2 O gas, O 2 gas, H 2 O gas or a gas mixture of these.
Claim 7
Dependent Claim 40 words
The polysilicon thin film of claims 1, 2, or 5, wherein the density of the SiO x particulate product is determined by the ratio of the oxygen-series gas to the silane-series gas, and the value of this ratio is: ##EQU3##
Claim 8
Dependent Claim 18 words
The polysilicon thin film of claims 1, 2, 4, or 5, wherein the substrate is a glass substrate.
Claim 9
Dependent Claim 18 words
The polysilicon thin film of claims 1, 2, 4, or 5 wherein the substrate is a metal substrate.

References Cited (Backward Citations)

JPS5643734A Cited
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JPH04280669A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-05-14 1999-11-13 2000-05-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-05-14 2003-11-13 2004-05-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-05-14 2007-11-13 2008-05-14 $7700.00 Window Closed / Lapsed

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