Thin film transistor

Abstract

Abstract PURPOSE:To prevent the current leakage between the metal electrode wiring and the source, drain and active layer by providing the inter-layer insulating film with a double-layer structure of a SiO2 film or phosphorus-silicate glass film formed by a cold low pressure CVD method and a SiO2 film formed by a hot low pressure CVD method. CONSTITUTION:An active layer 5 forming the channel of a thin film transistor is composed of amorphous silicon, particularly a hydrogenated amorphous silicon thin film or a polysilicon thin film, and the inter-layer insulating film provided between the thin film transistor and a metal electrode wiring 8 is comprised of a double-layer structure of a SiO2 film or phosphorus-silicate glass film 9 formed by a low pressure CVD method at a low temperature, preferably, at 380-500 deg.C and a SiO2 film 10 formed by a low pressure CVD method at a high temperature, preferably, at 700-900 deg.C. With this, the element plane is made flat, so the breaking of the metal electrode wiring at a step and the current leakage between the metal electrode wiring and the source or drain can be prevented.

Inventors

• 👤 Yutaka Sano
• 👤 Hiroshi Ikeguchi
• 👤 Noriyuki Terao

Bibliographic Details