US5164338A
Expired / Lapsed
US
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Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer
Assignee: Envec Mess und Regeltechnik GmbH and Co
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Filing: 1990-10-24
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Granted: 1992-11-17
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Expires: 2010-10-24
Abstract
Abstract The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped.
Inventors
- 👤 Volker Graeger
- 👤 Rolf U. D. Kobs
- 👤 Horst Schafer
- 👤 Heinrich Zeile
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:19
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0055; H01; H01C; H01C10/00; H01C10/10
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
83 words
A method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body, said method consisting essentially of depositing an insulating layer on said silicon body, depositing a first polycrystalline silicon layer on said insulating layer, depositing on said first polycrystalline silicon layer a second polycrystalline silicon layer, said second polycrystalline silicon layer being formed of crystallites larger than those of said first polycrystalline silicon layer and doping both polycrystalline silicon layers during or after the deposition of said silicon layers.
Claim 2
Independent Claim
83 words
A method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body, said method consisting essentially of depositing an insulating layer on said silicon body, depositing a first polycrystalline silicon layer on said insulating layer, depositing on said first polycrystalline silicon layer a second polycrystalline silicon layer, said second polycrystalline silicon layer being formed of crystallites larger than those of said first polycrystalline silicon layer and doping both polycrystalline silicon layers during or after the deposition of said silicon layers.
Claim 3
Dependent Claim
29 words
A method as claimed in claim 1, characterized in that the first polycrystalline silicon layer is deposited on the insulating layer by means of chemical or physical vapor deposition.
Claim 4
Dependent Claim
29 words
A method as claimed in claim 2, characterized in that the first polycrystalline silicon layer is deposited on the insulating layer by means of Low-Pressure Chemical vapor Deposition (LPCVD).
Claim 5
Dependent Claim
24 words
A method as claimed in claim 3, characterized in that the deposition takes place at a pressure lying between 0.1 mbar and 0.3 mbar.
Claim 6
Dependent Claim
26 words
A method as claimed in claim 2, characterized in that the first polycrystalline silicon layer is deposited on the insulating layer by means of cathode sputtering.
Claim 7
Dependent Claim
29 words
A method as claimed in claim 1, characterized in that the deposition of the first polycrystalline silicon layer is terminated as soon as a thin coherent layer has formed.
Claim 8
Dependent Claim
23 words
A method as claimed in claim 1, characterized in that the second polycrystalline silicon layer is applied by deposition from the gaseous phase.
Claim 9
Dependent Claim
26 words
A method as claimed in claim 1, characterized in that a silicon dioxide layer is formed by thermal oxidation on the silicon body as insulating layer.
Claim 10
Dependent Claim
31 words
A method as claimed in claim 1, characterized in that a silicon nitride layer is deposited on the silicon body as insulating layer by means of Low-Pressure Chemical Vapor Deposition (LPCVD).
Claim 11
Dependent Claim
17 words
A method as claimed in claim 1, characterized in that the doping takes place by ion implantation.
Claim 12
Dependent Claim
27 words
A method as claimed in claim 1, characterized in that the doping takes place during the application of the polycrystalline silicon layers by the addition of dopants.
Claim 13
Dependent Claim
56 words
A method as claimed in claim 1, characterized in that the resistance layer is structured by etching after the application of the second polycrystalline silicon layer, whereupon a passivation layer is applied, in which passivation layer windows for electrical contacts are then provided by photolithography, and finally a conductive metal layer is applied for contacting purposes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-17 | 1996-05-18 | 1996-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-17 | 2000-05-18 | 2000-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-17 | 2004-05-18 | 2004-11-17 | $7700.00 | Window Closed / Lapsed |