Polysilicon thin film with a particulate product of SiOx
Abstract
Abstract PCT No. PCT/JP93/00338 Sec. 371 Date Nov. 23, 1993 Sec. 102(e) Date Nov. 23, 1993 PCT Filed Mar. 23, 1993 PCT Pub. No. WO93/19022 PCT Pub. Date Sep. 30, 1992.The polysilicon thin film of the present invention is formed on a glass substrate or the like having a particulate product of SiOx (0<x</=2) of size not more than 100 ANGSTROM , for example, dispersed into not more than 100 pieces in an area of 0.1 mu m square. Furthermore, in the production method of a polysilicon thin film of the present invention, a particulate product of SiOx (0<x</=2) of size not more than 100 ANGSTROM , for example, dispersed into not more than 100 pieces in an area of 0.1 mu m square, is formed on a substrate, and thereafter a polysilicon thin film is grown using this particulate product as a nucleus.
Inventors
- 👤 Kenji Yamamoto
Bibliographic Details
Claims Analysis
Total Claims: 9References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-14 | 1999-11-13 | 2000-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-14 | 2003-11-13 | 2004-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-14 | 2007-11-13 | 2008-05-14 | $7700.00 | Window Closed / Lapsed |