Patent US5512768A successfully refreshed from Google Patents.
US5512768A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor for use in DRAM cell using surface oxidized silicon nodules
Assignee: United Microelectronics Corp
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Filing: 1994-03-18
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Granted: 1996-04-30
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Expires: 2014-03-18
Abstract
Abstract A MOST capacitor structure in accordance with the invention is formed by using surface oxidized silicon nodules after metal etching to define polysilicon pillars with annular cross sections and with diameters of 0.05 to 0.2 microns.
Inventors
- 👤 Water Lur
- 👤 Johnson Liu
- 👤 Jiunn-Yuan Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:28
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
75 words
A capacitor for use in a DRAM cell comprising, (a) a first polysilicon electrode layer, said first polysilicon electrode layer having a surface with a plurality of annular cylindrical polysilicon pillars, (b) a dielectric layer on said surface of said first polysilicon electrode layer, and (c) a second polysilicon electrode layer on said dielectric layer, wherein said annular cylindrical pillars have a wall thickness of 100-300 Angstroms and a diameter of 0.05 to 0.2 microns.
Claim 2
Dependent Claim
75 words
A capacitor for use in a DRAM cell comprising, (a) a first polysilicon electrode layer, said first polysilicon electrode layer having a surface with a plurality of annular cylindrical polysilicon pillars, (b) a dielectric layer on said surface of said first polysilicon electrode layer, and (c) a second polysilicon electrode layer on said dielectric layer, wherein said annular cylindrical pillars have a wall thickness of 100-300 Angstroms and a diameter of 0.05 to 0.2 microns.
References Cited (Backward Citations)
US4859622A
Cited
JPH02308551A
Cited
JPH03266460A
Cited
JPH0426156A
Cited
US5304828A
Cited
JPH0499373A
Cited
US5332696A
Cited
US5158905A
Cited
US5164881A
Cited
US5134086A
Cited
US5256587A
Cited
US5182232A
Cited
US5313100A
Cited
US5068199A
Cited
US5110752A
Cited
US5227322A
Cited
GB2259406A
Cited
US5213992A
Cited
US5342800A
Cited
US5302540A
Cited
US5350707A
Cited
US5244842A
Cited
US5204280A
Cited
US5254503A
Cited
US5308786A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-30 | 1999-10-30 | 2000-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-30 | 2003-10-30 | 2004-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-30 | 2007-10-30 | 2008-04-30 | $7700.00 | Window Closed / Lapsed |