US5510290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a field oxide layer in a semiconductor device which prevents bird beak by nitradation of pad oxide
Assignee: SK Hynix Inc
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Filing: 1995-03-31
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Granted: 1996-04-23
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Expires: 2015-03-31
Abstract
Abstract A method for forming a field oxide layer in a semiconductor device comprising the steps of: forming a pad oxide layer and a first resistant layer of oxidation, in turn, on a substrate; opening a field region by etching a portion of the said resistant layer of oxidation, whereby a part of the said pad oxide layer remains; forming the pad oxide layer into a nitric oxide layer; forming a second and a third resistant layer of oxidation, in turn, on a resultant structure; forming a spacer layer by applying anisotropic etching to the third resistant layer of oxidation; exposing a portion of the substrate by etching the second resistant layer of oxidation and the pad layer which is formed into the nitride layer; and forming the field oxide layer by oxidizing the substrate.
Inventors
- 👤 Sung K. Kwon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:36
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0124; H10P; H10P14/00; H10P14/60; H10P14/61; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
121 words
A method for forming a field oxide layer in a semiconductor device comprising the steps of: forming a pad layer and a first resistant layer of oxidation, in turn, on a substrate; opening a field region by etching a portion of said resistant layer of oxidation, whereby a part of said pad layer remains; forming said pad layer into a oxynitride layer; forming a second and a third resistant layer of oxidation, in turn, on a resultant structure; forming a spacer layer by applying anisotropic etching to said third resistant layer of oxidation; exposing a portion of said substrate by etching said second resistant layer of oxidation and said oxynitride layer; and forming said field oxide layer by oxidizing said substrate.
Claim 2
Independent Claim
121 words
A method for forming a field oxide layer in a semiconductor device comprising the steps of: forming a pad layer and a first resistant layer of oxidation, in turn, on a substrate; opening a field region by etching a portion of said resistant layer of oxidation, whereby a part of said pad layer remains; forming said pad layer into a oxynitride layer; forming a second and a third resistant layer of oxidation, in turn, on a resultant structure; forming a spacer layer by applying anisotropic etching to said third resistant layer of oxidation; exposing a portion of said substrate by etching said second resistant layer of oxidation and said oxynitride layer; and forming said field oxide layer by oxidizing said substrate.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said pad layer is a oxide layer.
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein said pad layer is, in turn, a stacked layer of an oxide layer and a polysilicon layer on said substrate.
Claim 5
Dependent Claim
31 words
A method according to claim 1, wherein the step of exposing a portion of said substrate further comprising the step of forming a trench which is formed by etching said substrate.
Claim 6
Dependent Claim
25 words
A method according to claim 1, wherein the step of exposing a portion of said substrate further comprising the step of removing said spacer layer.
Claim 7
Dependent Claim
31 words
A method according to claim 1, wherein said first resistant layer of oxidation is, in turn, a stacked layer of a nitride layer and a oxide layer on said pad layer.
Claim 8
Dependent Claim
17 words
A method according to claim 1, wherein said second resistant layer of oxidation is a nitride layer.
Claim 9
Dependent Claim
22 words
A method according to claim 4, wherein the step of forming a trench further comprising the step of removing said spacer layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-23 | 1999-10-23 | 2000-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-23 | 2003-10-23 | 2004-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-23 | 2007-10-23 | 2008-04-23 | $7700.00 | Window Closed / Lapsed |