US5447885A
Expired / Lapsed
US
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Isolation method of semiconductor device
Assignee: Mosaid Technologies Inc
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Filing: 1994-06-30
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Granted: 1995-09-05
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Expires: 2014-06-30
Abstract
Abstract In a method for forming an isolation region in a semiconductor device, after forming a first oxide film and a silicon film on a semiconductor substrate, an oxidation-blocking film is formed on the silicon film. Then, a high-temperature heat treatment process is performed in a nitrogenous atmosphere. The oxidation-blocking film is selectively etched to form an opening, and a thermal oxidation process is performed to form a thermal oxide film in the opening. A bird's beak between the oxidation-blocking film and the silicon film is suppressed because of the heat treatment in a nitrogenous atmosphere, so that stable isolation characteristics can be secured.
Inventors
- 👤 Hyun-jin Cho
- 👤 Heung-mo Yang
- 👤 Yun-sung Shin
- 👤 Oh-Hyun Kwon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:43
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10P; H10P14/00; H10P14/60; H10P14/61
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
97 words
A method for forming an isolation region of a semiconductor device, comprising the steps of: (a) forming an oxide film on a semiconductor substrate; (b) forming a silicon layer on said oxide film; (c) forming an oxidation-blocking layer on said silicon layer; (d) heat treating said oxidation-blocking layer in a nitrogen-containing atmosphere; (e) selectively forming an opening in said heat-treated oxidation-blocking layer to expose a portion of said silicon layer; (f) thermally oxidizing said exposed portion of said silicon layer to thereby obtain a thermal oxide layer in said opening; and (g) removing said heat-treated oxidation-blocking layer.
Claim 2
Independent Claim
97 words
A method for forming an isolation region of a semiconductor device, comprising the steps of: (a) forming an oxide film on a semiconductor substrate; (b) forming a silicon layer on said oxide film; (c) forming an oxidation-blocking layer on said silicon layer; (d) heat treating said oxidation-blocking layer in a nitrogen-containing atmosphere; (e) selectively forming an opening in said heat-treated oxidation-blocking layer to expose a portion of said silicon layer; (f) thermally oxidizing said exposed portion of said silicon layer to thereby obtain a thermal oxide layer in said opening; and (g) removing said heat-treated oxidation-blocking layer.
Claim 3
Dependent Claim
26 words
An isolation method as claimed in claim 1, wherein said heat treatment step is performed after said step of forming an opening in said oxidation-blocking layer.
Claim 4
Dependent Claim
37 words
An isolation method as claimed in claim 1, wherein after said step of forming an oxidation-blocking layer said method further comprises the step of implanting nitrogen ions over a resultant structure having said oxidation-blocking layer formed thereon.
Claim 5
Dependent Claim
17 words
An isolation method according to claim 1, wherein said silicon layer is formed from an impurity-doped silicon.
Claim 6
Dependent Claim
16 words
An isolation method according to claim 1, wherein said oxidation-blocking layer is formed from silicon nitride.
Claim 7
Dependent Claim
29 words
An isolation method according to claim 1, wherein said step of heat treating said oxidation-blocking layer is carried out at at least about 1150° C. for about eight hours.
Claim 8
Dependent Claim
30 words
An isolation method according to claim 1, further comprising a step of nitrifying a resultant structure having said silicon layer formed thereon, before said step of forming said oxidation-blocking layer.
Claim 9
Dependent Claim
35 words
An isolation method according to claim 7, wherein said step of nitrifying comprises heating said resultant structure having said silicon layer formed thereon in a nitride deposition chamber to a temperature of about 850° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-04 | 1999-03-06 | 1999-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-04 | 2003-03-06 | 2003-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-04 | 2007-03-06 | 2007-09-05 | $7700.00 | Window Closed / Lapsed |