US5397733A
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Method for the construction of field oxide film in semiconductor device
Assignee: SK Hynix Inc
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Filing: 1994-05-20
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Granted: 1995-03-14
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Expires: 2014-05-20
Abstract
Abstract Methods for the construction of field oxide film is disclosed. The methods facilitates the control of the length and thickness of L-shaped spacer, overcoming some difficulties in processing a semiconductor device. Thus, the stresses and defects of semiconductor substrate can be greatly diminished. In addition, the methods bring about an effect of easily achieving the separation process of semiconductor device, an essential process. Superior in suppressing Bird's beak, the methods are capable of securing more large active region in a semiconductor device.
Inventors
- 👤 Se A. Jang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:18
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10P; H10P14/00; H10P14/60; H10P14/61; H10P50/00; H10P50/20; H10P50/28; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
130 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps: forming a nitride film over a pad oxide film overlaying a semiconductor substrate; etching a portion of the nitride film to a degree that the pad oxide film is not exposed, said nitride film coming to be left in a thickness in said portion; forming a polysilicon film over the resulting nitride film and applying spacer etch to a region included in said portion without a mask in such a way to remove the polysilicon film and the nitride film and to leave a thickness of the pad oxide film so as not to expose the semiconductor substrate; and removing the polysilicon film left after the spacer etch and forming a field oxide film.
Claim 2
Independent Claim
130 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps: forming a nitride film over a pad oxide film overlaying a semiconductor substrate; etching a portion of the nitride film to a degree that the pad oxide film is not exposed, said nitride film coming to be left in a thickness in said portion; forming a polysilicon film over the resulting nitride film and applying spacer etch to a region included in said portion without a mask in such a way to remove the polysilicon film and the nitride film and to leave a thickness of the pad oxide film so as not to expose the semiconductor substrate; and removing the polysilicon film left after the spacer etch and forming a field oxide film.
Claim 3
Dependent Claim
53 words
A method for the construction of field oxide film according to claim 1, wherein said pad oxide film, said nitride film, and said polysilicon film are formed in thicknesses ranging from approximately 200 to approximately 300 Å, from approximately 1,000 to approximately 2,000 Å, and from approximately 300 to approximately 1,000 Å, respectively.
Claim 4
Dependent Claim
32 words
A method for the construction of field oxide film according to claim 1, wherein said nitride film is left in a thickness of approximately 300 to approximately 700 Å in said portion.
Claim 5
Dependent Claim
37 words
A method for the construction of field oxide film according to claim 1, wherein said thickness of the pad oxide film left after the spacer etch is on the order of approximately 100 to approximately 150 Å.
Claim 6
Independent Claim
139 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a nitride film over a polysilicon film atop a pad oxide film overlaying a semiconductor substrate; etching a portion of the nitride film to a degree that the polysilicon film is not exposed, said nitride film coming to be left in a thickness in said portion; forming an oxide film over the resulting nitride film and applying spacer etch to a region included in said portion without a mask in such a way to remove the oxide film and the nitride film and to leave a thickness of the polysilicon film so as not to expose the pad oxide film; and removing the oxide film left after the spacer etch and forming a field oxide film by use of thermal oxidation.
Claim 7
Independent Claim
139 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a nitride film over a polysilicon film atop a pad oxide film overlaying a semiconductor substrate; etching a portion of the nitride film to a degree that the polysilicon film is not exposed, said nitride film coming to be left in a thickness in said portion; forming an oxide film over the resulting nitride film and applying spacer etch to a region included in said portion without a mask in such a way to remove the oxide film and the nitride film and to leave a thickness of the polysilicon film so as not to expose the pad oxide film; and removing the oxide film left after the spacer etch and forming a field oxide film by use of thermal oxidation.
Claim 8
Dependent Claim
33 words
A method for the construction of field oxide film according to claim 5, wherein said polysilicon film is left in a thickness of approximately 200 to approximately 400 Å after said spacer etch.
Claim 9
Independent Claim
139 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a nitride film over a pad oxide film atop a semiconductor substrate; etching a portion of the nitride film to a degree that the pad oxide film is not exposed, said nitride film coming to be left in a thickness in said portion; forming an oxide film over the resulting nitride film and applying spacer etch to a region included in said portion in such a way to remove the oxide film and the nitride film and to leave a thickness of the pad oxide film so as not to expose the semiconductor substrate; and performing wet etch to remove at once the oxide film left after said spacer etch and the pad oxide exposed and forming a field oxide film.
Claim 10
Independent Claim
139 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a nitride film over a pad oxide film atop a semiconductor substrate; etching a portion of the nitride film to a degree that the pad oxide film is not exposed, said nitride film coming to be left in a thickness in said portion; forming an oxide film over the resulting nitride film and applying spacer etch to a region included in said portion in such a way to remove the oxide film and the nitride film and to leave a thickness of the pad oxide film so as not to expose the semiconductor substrate; and performing wet etch to remove at once the oxide film left after said spacer etch and the pad oxide exposed and forming a field oxide film.
Claim 11
Dependent Claim
53 words
A method for the construction of field oxide film according to claim 7, wherein said pad oxide film, said nitride film, and said oxide film are formed in thicknesses ranging from approximately 200 to approximately 300 Å, from approximately 1,000 to approximately 2,000 Å, and from approximately 1,000 to approximately 2,000 Å, respectively.
Claim 12
Dependent Claim
32 words
A method for the construction of field oxide film according to claim 7, wherein said nitride film is left in a thickness of approximately 300 to approximately 700 Å in said portion.
Claim 13
Independent Claim
119 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a first nitride film, a polysilicon film and a second nitride film over a semiconductor substrate, in due order; etching a portion of the second nitride film and polysilicon film, so as to expose the first nitride film; forming an oxide film over the resulting structure and applying spacer etch to a region included in said portion to remove the oxide film and the first nitride film so as to expose the pad oxide film; removing at once the oxide film left after said spacer etch and the exposed pad oxide and forming a field oxide film.
Claim 14
Independent Claim
119 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a first nitride film, a polysilicon film and a second nitride film over a semiconductor substrate, in due order; etching a portion of the second nitride film and polysilicon film, so as to expose the first nitride film; forming an oxide film over the resulting structure and applying spacer etch to a region included in said portion to remove the oxide film and the first nitride film so as to expose the pad oxide film; removing at once the oxide film left after said spacer etch and the exposed pad oxide and forming a field oxide film.
Claim 15
Independent Claim
127 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a first nitride film, a first oxide film and a second nitride film over a semiconductor substrate, in due order; etching a portion of the second nitride film, so as to expose the first oxide film and forming a second oxide film over the resulting structure; applying spacer etch to a region included in said portion to remove the second oxide film, the first oxide film, and the first nitride film, in due order so as to expose the pad oxide film; removing at once the second oxide film left after said spacer etch and the exposed pad oxide and forming a field oxide film.
Claim 16
Independent Claim
127 words
A method for the construction of field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a first nitride film, a first oxide film and a second nitride film over a semiconductor substrate, in due order; etching a portion of the second nitride film, so as to expose the first oxide film and forming a second oxide film over the resulting structure; applying spacer etch to a region included in said portion to remove the second oxide film, the first oxide film, and the first nitride film, in due order so as to expose the pad oxide film; removing at once the second oxide film left after said spacer etch and the exposed pad oxide and forming a field oxide film.
Claim 17
Dependent Claim
43 words
A method for the construction of field oxide film according to claim 11, wherein said first nitride film and said second nitride film are formed in thicknesses ranging from approximately 300 to approximately 700 Å and from approximately 1,000 to 2,000 Å, respectively.
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