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US5506152A
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Method of making silicon controlled rectifier with a variable base-shunt resistance
Assignee: Mosaid Technologies Inc
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Filing: 1994-09-01
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Granted: 1996-04-09
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Expires: 2014-09-01
Abstract
Abstract An optically triggered silicon controlled rectifier (SCR) circuit (20) has a number of semiconductor layers diffused into an N- substrate (21). The layers form an SCR (50) having a P+ anode region (25), a P+ gate region (24), and an N+ cathode region (27). An adjustable base-shunt resistance, in the form of a P- channel depletion mode MOSFET (Q3), connects between the SCR gate region and the cathode region. The MOSFET includes a MOSFET gate region (35), a P+ drain region (24), a P-- channel (26), and a P+ source region (23). The substrate also accommodates a PN photodiode (22, D1) which connects to the MOSFET gate region for switching the MOSFET on and off in response to incident optical radiation (L) thereon. The SCR gate region also comprises photosensitive material. When sufficient optical radiation illuminates the photodiode and the SCR gate region, the MOSFET is turned off and the SCR is triggered, permitting anode-to-cathode current to flow. When insufficient optical radiation is present, the MOSFET is turned on and provides a low-resistance shunt path which prevents the SCR gate region from triggering the SCR.
Inventors
- 👤 David Whitney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:40
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10F30/263; Y; Y10; Y10S; Y10S148/00; Y10S148/136
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
104 words
A method of fabricating an improved for comprising: diffusing doped impurities into a semiconductor substrate to form an anode region, a cathode region, and an SCR gate region; diffusing doped impurities into said substrate to form a source region, a drain region, and a channel having an adjustable resistance, said channel extending between and in contact with said source region and said drain region, and said source region being in contact with said SCR gate region; forming a MOSFET gate region on said substrate in superposition with said channel; forming a switch on said substrate; and connecting said switch to said MOSFET gate region.
Claim 2
Independent Claim
104 words
A method of fabricating an improved for comprising: diffusing doped impurities into a semiconductor substrate to form an anode region, a cathode region, and an SCR gate region; diffusing doped impurities into said substrate to form a source region, a drain region, and a channel having an adjustable resistance, said channel extending between and in contact with said source region and said drain region, and said source region being in contact with said SCR gate region; forming a MOSFET gate region on said substrate in superposition with said channel; forming a switch on said substrate; and connecting said switch to said MOSFET gate region.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said cathode region is formed by diffusion into said SCR gate region.
Claim 4
Dependent Claim
23 words
The method of claim 2 wherein said diffusion steps comprise forming said source region and said SCR gate region as a common region.
Claim 5
Dependent Claim
22 words
The method of claim 3 wherein said step of forming a switch comprises forming a PN photodiode by diffusion into said substrate.
Claim 6
Dependent Claim
26 words
The method of claim 4 wherein the step of forming said SCR gate region comprises forming a layer of photosensitive material by diffusion into said substrate.
Claim 7
Dependent Claim
41 words
The method of claim 5 wherein said source region, drain region, channel and MOSFET gate region function together as a P- channel depletion MOSFET, and wherein said source region and said SCR gate region are formed as a common P+ region.
Claim 8
Independent Claim
127 words
A method of making a silicon controlled rectifier (SCR), comprising: (a) providing a N- substrate having an upper surface; (b) doping the upper surface of the N- substrate to form four adjacent P+ regions, the regions being laterally spaced apart from one another; (c) doping the upper surface of the substrate to form a P-- region which connects adjacent first and second P+ regions; (d) doping a small region of the upper surface of the second P+ to form a N+ region; (e) forming an insulating layer having an upper surface over the upper surface of the substrate that has openings therein to provide access to the P+ regions; and (f) providing conductive contacts for each of the P+ regions via respective openings in the insulating layer.
Claim 9
Independent Claim
127 words
A method of making a silicon controlled rectifier (SCR), comprising: (a) providing a N- substrate having an upper surface; (b) doping the upper surface of the N- substrate to form four adjacent P+ regions, the regions being laterally spaced apart from one another; (c) doping the upper surface of the substrate to form a P-- region which connects adjacent first and second P+ regions; (d) doping a small region of the upper surface of the second P+ to form a N+ region; (e) forming an insulating layer having an upper surface over the upper surface of the substrate that has openings therein to provide access to the P+ regions; and (f) providing conductive contacts for each of the P+ regions via respective openings in the insulating layer.
Claim 10
Dependent Claim
68 words
The method of claim 7, further comprising forming a conductive contact on the upper surface of the insulating layer directly above the P-- region, and wherein the step of providing conductive contacts comprises providing a common conductive contact for the first and second P+ regions; providing a conductive contact for the third P+ regions; and providing a common conductive contact for the fourth P+ region and P-- region.
Claim 11
Dependent Claim
39 words
The method of claim 7, wherein the step of providing conductive contacts comprises forming a pattern of conductors on the upper surface of the SCR that includes a NOSFET gate, an SCR cathode terminal and an SCR anode terminal.
Claim 12
Dependent Claim
26 words
The method of claim 7, wherein the second and fourth P+ regions are doped to be photosensitive and to form respective photodiodes together with the substrate.
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