Semiconductor device

Abstract

Abstract PURPOSE:To obtain a triac switch having a zero volt switching function for itself by a method wherein two lateral PNPN thyristors are connected in anti-parallel by using electrode metals and the action of P-channel MOSFET is created by the anode of one thyristor and the cathode of the other thyristor, and the electrode metals. CONSTITUTION:A P type anode 1-1, N type gate 1-2, P type cathode 1-3, N type base layer 1-4, P type emitter layer 1-5, and N type emitter layer 1-6 are formed on an N type semiconductor substrate and one lateral thyristor 1 is composed. Next, a P type anode 2-1, N type gate 2-2, P type cathode 2-3, N type base layer 2-4, P type emitter layers 2-5, and N type emitter layers 2-6 are formed on the same substrate and the other lateral thyristor 2 is composed. Then, the P type anode 1-1 and P type cathode 2-3, and the P type cathode 1-3 and P type anode 2-1 are connected by Al electrode metals 10 respectively and thyristors 1 and 2 are composed of anti-parallel connection.

Inventors

• 👤 Tomonobu Yoshitake

Bibliographic Details