Patent US5500387A successfully refreshed from Google Patents.
US5500387A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making high performance capacitors and/or resistors for integrated circuits
Assignee: Texas Instruments Inc
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Filing: 1994-02-16
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Granted: 1996-03-19
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Expires: 2014-02-16
Abstract
Abstract A method of making an integrated circuit containing a capacitor comprising the steps of providing a semiconductor substrate having an active region and an oxide region on the substrate defining the active region, forming a mask on the active region, forming a region of heavily doped polysilicon on the oxide region having a doping level of from about 10 to about 15 ohms/square, removing the mask from the active region, commencing fabrication of an active device in the active region, forming a layer of electrically insulating material over the region of heavily doped polysilicon and a layer of electrically insulating material over the active region, forming a layer of heavily doped polysilicon having a doping level of from about 10 to about 15 ohms/square on the electrically insulating material to complete fabrication of the capacitor and on the active region and completing fabrication of an active device in the active region. More than one capacitor can be formed, this being accomplished by concurrently duplication of the above described process of forming a capacitor on another region of the substrate. The capacitors can have different capacitance by enlarging the insulating layer thereof, this being accomplished either by removal of oxide from or addition of oxide to one of the capacitors to the exclusion of the other during processing.
Inventors
- 👤 Yingsheng Tung
- 👤 Robert E. Dixon
- 👤 Shih-Hsin Ying
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:41
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/60; H10D1/68; H10D84/00; H10D84/80; H10D84/811; H10D84/813; H10D84/817; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
256 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of heavily doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (h) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions and then forming said second layer of heavily doped polysilicon on said electrically insulating material.
Claim 2
Independent Claim
256 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of heavily doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (h) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions and then forming said second layer of heavily doped polysilicon on said electrically insulating material.
Claim 3
Dependent Claim
61 words
The method of claim 1 further including the step of forming said second capacitor at the other of said two spaced apart portions by forming contacts on said first layer of said other of said two spaced apart portions and on the portion of said second layer disposed over said other of said two spaced apart portions of said first layer.
Claim 4
Independent Claim
273 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of heavily doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a resistor in said first layer by forming contacts at opposing ends of said first layer; (h) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (i) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions and then forming said second layer of doped polysilicon on said electrically insulating material.
Claim 5
Independent Claim
273 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of heavily doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a resistor in said first layer by forming contacts at opposing ends of said first layer; (h) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (i) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions and then forming said second layer of doped polysilicon on said electrically insulating material.
Claim 6
Dependent Claim
61 words
The method of claim 3 further including the step of forming said second capacitor at the other of said two spaced apart portions by forming contacts on said first layer of said other of said two spaced apart portions and on the portion of said second layer disposed over said other of said two spaced apart portions of said first layer.
Claim 7
Independent Claim
273 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a resistor in said second layer by forming contacts at opposing ends of said second layer; (h) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (i) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions; and then forming said second layer of heavily doped polysilicon on said electrically insulating material.
Claim 8
Independent Claim
273 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a resistor in said second layer by forming contacts at opposing ends of said second layer; (h) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (i) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions; and then forming said second layer of heavily doped polysilicon on said electrically insulating material.
Claim 9
Dependent Claim
61 words
The method of claim 5 further including the step of forming said second capacitor at the other of said two spaced apart portions by forming contacts on said first layer of said other of said two spaced apart portions and on the portion of said second layer disposed over said other of said two spaced apart portions of said first layer.
Claim 10
Independent Claim
291 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a resistor in said first layer by forming contacts at opposing ends of said first layer; (h) forming a resistor in said second layer by forming contacts at opposing ends of said second layer; (i) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (j) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions and then forming said second layer of heavily doped polysilicon on said electrically insulating material.
Claim 11
Independent Claim
291 words
A method of making an integrated circuit comprising the steps of: (a) providing a semiconductor substrate having a masked active surface region and an inactive surface region defining said active region; (b) forming a first layer of doped polysilicon on said inactive region; (c) patterning and etching said first layer; (d) removing the mask from said masked active region; (e) forming a layer of electrically insulating material over said first layer of doped polysilicon; (f) forming a second layer of doped polysilicon having a sheet resistance of from about 10 ohms/square to about 15 ohms/square on said electrically insulating material; (g) forming a resistor in said first layer by forming contacts at opposing ends of said first layer; (h) forming a resistor in said second layer by forming contacts at opposing ends of said second layer; (i) forming a first capacitor from said first layer and said second layer by forming contacts on said first layer and on said second layer; and (j) forming a second capacitor having a capacitance different from that of said first capacitor by the steps of forming said first layer of doped polysilicon on two spaced apart portions of said inactive region, removing said layer of electrically insulating material over said first layer of doped polysilicon from one of said two spaced apart portions of said inactive region, forming a second layer of electrically insulating material over said two spaced apart portions of said inactive region so that the layer of electrically insulating material over one of said two spaced apart portions is now thicker than the layer of electrically insulating material over the other of said two spaced apart portions and then forming said second layer of heavily doped polysilicon on said electrically insulating material.
Claim 12
Dependent Claim
61 words
The method of claim 7 further including the step of forming said second capacitor at the other of said two spaced apart portions by forming contacts on said first layer of said other of said two spaced apart portions and on the portion of said second layer disposed over said other of said two spaced apart portions of said first layer.
Claim 13
Dependent Claim
60 words
The method of claim 8 further including the step of forming a transistor in said active region by the steps of forming a layer of electrically insulating material over said substrate in said active region and forming a doped region of said doped polysilicon in said active region over said layer of electrically insulating material concurrently with said second layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-19 | 1999-09-18 | 2000-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-19 | 2003-09-18 | 2004-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-19 | 2007-09-18 | 2008-03-19 | $7700.00 | Window Closed / Lapsed |