Patent US5498501A successfully refreshed from Google Patents.
US5498501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Exposure method
Assignee: Canon Inc
•
Filing: 1995-04-04
•
Granted: 1996-03-12
•
Expires: 2015-04-04
Abstract
Abstract A method of manufacturing of semiconductor devices, includes exposing different portions of a semiconductor substrate with a first exposure apparatus having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus, which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the entire second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.
Inventors
- 👤 Isamu Shimoda
- 👤 Takao Kariya
- 👤 Nobutoshi Mizusawa
- 👤 Kunitaka Ozawa
- 👤 Shunichi Uzawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:10
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70058; G03F7/70066; G03F7/20; G03F7/2022; G03F7/70425; G03F7/7045; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
238 words
A semiconductor device manufacturing method, comprising the steps of: providing an optical exposure apparatus having a first exposure field, the optical exposure apparatus being operable to transfer a pattern of a first mask onto different shot areas of a semiconductor substrate in sequence and on a reduced scale; providing an X-ray exposure apparatus having a second exposure field larger than the first exposure field, the X-ray exposure apparatus being operable to transfer a pattern of a second mask onto different shot areas, within the second exposure field, of a semiconductor substrate simultaneously and in a unit magnification; transferring, through the optical exposure apparatus, the pattern of the first mask onto plural shot areas of a particular semiconductor substrate; placing, after said transferring step, the particular semiconductor substrate in the X-ray exposure apparatus; detecting positional errors of those shot areas covered by the second exposure field with respect to the pattern of the second mask; calculating an overall positional error within the range of the second exposure field, on the basis of the detected positional errors; reducing the second exposure field when the calculated overall positional error is not less than a predetermined error, so as to reduce the number of shot areas to be covered by the second exposure field; and transferring, through the X-ray exposure apparatus, the pattern of the second mask onto those shot areas to which the pattern of the first mask has been transferred.
Claim 2
Dependent Claim
238 words
A semiconductor device manufacturing method, comprising the steps of: providing an optical exposure apparatus having a first exposure field, the optical exposure apparatus being operable to transfer a pattern of a first mask onto different shot areas of a semiconductor substrate in sequence and on a reduced scale; providing an X-ray exposure apparatus having a second exposure field larger than the first exposure field, the X-ray exposure apparatus being operable to transfer a pattern of a second mask onto different shot areas, within the second exposure field, of a semiconductor substrate simultaneously and in a unit magnification; transferring, through the optical exposure apparatus, the pattern of the first mask onto plural shot areas of a particular semiconductor substrate; placing, after said transferring step, the particular semiconductor substrate in the X-ray exposure apparatus; detecting positional errors of those shot areas covered by the second exposure field with respect to the pattern of the second mask; calculating an overall positional error within the range of the second exposure field, on the basis of the detected positional errors; reducing the second exposure field when the calculated overall positional error is not less than a predetermined error, so as to reduce the number of shot areas to be covered by the second exposure field; and transferring, through the X-ray exposure apparatus, the pattern of the second mask onto those shot areas to which the pattern of the first mask has been transferred.
Claim 3
Dependent Claim
38 words
A method according to claim 1, wherein the positional error comprises an error between a shot area of the particular semiconductor substrate and the pattern of the second mask with respect to a direction along the shot area.
Claim 4
Dependent Claim
49 words
A method according to claim 1, wherein the positional error comprises an error between a shot area of the particular semiconductor substrate and the pattern of the second mask with respect to a direction along which the particular semiconductor substrate and the second mask are opposed to each other.
Claim 5
Dependent Claim
32 words
A method according to claim 1, wherein said step of reducing of the second exposure field comprises the step of moving a blade member which defines the range of irradiation of X-rays.
Claim 6
Dependent Claim
19 words
A method according to claim 1, wherein the optical exposure apparatus comprises a generating source for generating UV light.
Claim 7
Dependent Claim
19 words
A method according to claim 1, wherein the X-ray exposure apparatus comprises a generating source for generating synchrotron radiation.
Claim 8
Dependent Claim
23 words
A method according to claim 1, wherein the first mask comprises one chip pattern and an alignment mark provided around the chip pattern.
Claim 9
Dependent Claim
29 words
A method according to claim 1, wherein the second mask comprises a plurality of chip patterns and a plurality of alignment marks each formed around a corresponding chip pattern.
Claim 10
Dependent Claim
53 words
A method according to claim 11, wherein said detecting step comprises detecting the relation between an alignment mark of a first mask, as transferred onto the shot area by the optical exposure apparatus, and an alignment mark of a second mask placed in the X-ray exposure apparatus, to thereby detect an alignment error.
Claim 11
Dependent Claim
29 words
A method according to claim 9, wherein the detection of the alignment error is performed for every shot area or every N shot areas, wherein N is an integer.
Claim 12
Dependent Claim
190 words
A semiconductor device manufacturing method, comprising the steps of: providing an optical exposure apparatus operable to transfer a pattern of a first mask onto different shot areas of a semiconductor substrate in sequence and on a reduced scale; providing an X-ray exposure apparatus operable to transfer a pattern of a second mask onto one or more shot areas of a semiconductor substrate simultaneously and in a unit magnification; transferring, through the optical exposure apparatus, the pattern of the first mask onto plural shot areas of a particular semiconductor substrate; placing, after said transferring step, the particular semiconductor substrate in the X-ray exposure apparatus; detecting positional errors of those shot areas to which the pattern of the first mask has been transferred with respect to the pattern of the second mask; determining the number of shot areas to which the pattern of the second mask is to be transferred simultaneously through the X-ray exposure apparatus, on the basis of the detected positional errors; and transferring, through the X-ray exposure apparatus, the pattern of the second mask onto those shot areas to which the pattern of the first mask has been transferred.
Claim 13
Dependent Claim
190 words
A semiconductor device manufacturing method, comprising the steps of: providing an optical exposure apparatus operable to transfer a pattern of a first mask onto different shot areas of a semiconductor substrate in sequence and on a reduced scale; providing an X-ray exposure apparatus operable to transfer a pattern of a second mask onto one or more shot areas of a semiconductor substrate simultaneously and in a unit magnification; transferring, through the optical exposure apparatus, the pattern of the first mask onto plural shot areas of a particular semiconductor substrate; placing, after said transferring step, the particular semiconductor substrate in the X-ray exposure apparatus; detecting positional errors of those shot areas to which the pattern of the first mask has been transferred with respect to the pattern of the second mask; determining the number of shot areas to which the pattern of the second mask is to be transferred simultaneously through the X-ray exposure apparatus, on the basis of the detected positional errors; and transferring, through the X-ray exposure apparatus, the pattern of the second mask onto those shot areas to which the pattern of the first mask has been transferred.
Claim 14
Dependent Claim
38 words
A method according to claim 11, wherein the positional error comprises an error between a shot area of the particular semiconductor substrate and the pattern of the second mask with respect to a direction along the shot area.
Claim 15
Dependent Claim
49 words
A method according to claim 11, wherein the positional error comprises an error between a shot area of the particular semiconductor substrate and the pattern of the second mask with respect to a direction along which the particular semiconductor substrate and the second mask are opposed to each other.
Claim 16
Dependent Claim
19 words
A method according to claim 11, wherein the optical exposure apparatus comprises a generating source for generating UV light.
Claim 17
Dependent Claim
19 words
A method according to claim 11, wherein the X-ray exposure apparatus comprises a generating source for generating synchrotron radiation.
Claim 18
Dependent Claim
23 words
A method according to claim 11, wherein the first mask comprises one chip pattern and an alignment mark provided around the chip pattern.
Claim 19
Dependent Claim
29 words
A method according to claim 11, wherein the second mask comprises a plurality of chip patterns and a plurality of alignment marks each formed around a corresponding chip pattern.
Claim 20
Dependent Claim
53 words
A method according to claim 11, wherein said detecting step comprises detecting the relation between an alignment mark of a first mask, as transferred onto the shot area by the optical exposure apparatus, and an alignment mark of a second mask placed in the X-ray exposure apparatus, to thereby detect an alignment error.
Claim 21
Dependent Claim
29 words
A method according to claim 18, wherein the detection of the alignment error is performed for every shot area or every N shot areas, wherein N is an integer.
Claim 22
Independent Claim
180 words
A device manufacturing method comprising: providing an optical exposure apparatus operable to transfer a pattern of a mask onto different shot areas of a substrate in sequence; providing an X-ray exposure apparatus operable to transfer a pattern of a mask onto one or more shot areas of a substrate simultaneously; transferring, by use of the optical exposure apparatus, a pattern of a first mask onto plural shot areas of a particular substrate; placing, after said transferring step, the particular substrate in the X-ray exposure apparatus; detecting positional errors of those shot areas of the particular substrate to which the pattern of the first mask has been transferred, with respect to a pattern of a second mask; determining the number of shot areas to which the pattern of the second mask is to be transferred simultaneously with the X-ray exposure apparatus, on the basis of the detected positional errors; and transferring, with the X-ray exposure apparatus, the pattern of the second mask onto those shot areas of the particular substrate to which the pattern of the first mask has been transferred.
Claim 23
Independent Claim
180 words
A device manufacturing method comprising: providing an optical exposure apparatus operable to transfer a pattern of a mask onto different shot areas of a substrate in sequence; providing an X-ray exposure apparatus operable to transfer a pattern of a mask onto one or more shot areas of a substrate simultaneously; transferring, by use of the optical exposure apparatus, a pattern of a first mask onto plural shot areas of a particular substrate; placing, after said transferring step, the particular substrate in the X-ray exposure apparatus; detecting positional errors of those shot areas of the particular substrate to which the pattern of the first mask has been transferred, with respect to a pattern of a second mask; determining the number of shot areas to which the pattern of the second mask is to be transferred simultaneously with the X-ray exposure apparatus, on the basis of the detected positional errors; and transferring, with the X-ray exposure apparatus, the pattern of the second mask onto those shot areas of the particular substrate to which the pattern of the first mask has been transferred.
Claim 24
Dependent Claim
172 words
A set of masks for use in the manufacture of devices, comprising: a first mask having a first pattern, for use in an optical exposure apparatus operable to transfer a pattern of a mask onto plural shot areas of a substrate in sequence; and a second mask having a second pattern, for use in an X-ray exposure apparatus operable to transfer a pattern of a mask onto one or more shot areas of a substrate simultaneously, wherein the first and second masks have alignment marks which are arranged for detection of positional errors of those shot areas of a particular substrate to which the first pattern of the first mask has been transferred with the optical exposure apparatus, with respect to the second pattern of the second mask, and which are also arranged for determination of the number of shot areas of the particular substrate to which the second pattern of the second mask is to be transferred simultaneously with the X-ray exposure apparatus, on the basis of the detected positional errors.
Claim 25
Dependent Claim
172 words
A set of masks for use in the manufacture of devices, comprising: a first mask having a first pattern, for use in an optical exposure apparatus operable to transfer a pattern of a mask onto plural shot areas of a substrate in sequence; and a second mask having a second pattern, for use in an X-ray exposure apparatus operable to transfer a pattern of a mask onto one or more shot areas of a substrate simultaneously, wherein the first and second masks have alignment marks which are arranged for detection of positional errors of those shot areas of a particular substrate to which the first pattern of the first mask has been transferred with the optical exposure apparatus, with respect to the second pattern of the second mask, and which are also arranged for determination of the number of shot areas of the particular substrate to which the second pattern of the second mask is to be transferred simultaneously with the X-ray exposure apparatus, on the basis of the detected positional errors.
Claim 26
Dependent Claim
20 words
A set of masks according to claim 21, wherein the first mask has one chip pattern as the first pattern.
Claim 27
Dependent Claim
22 words
A set of masks according to claim 22, wherein the alignment mark of the first mask is formed around the chip pattern.
Claim 28
Dependent Claim
22 words
A set of masks according to claim 21, wherein the second mask has a plurality of chip patterns as the second pattern.
Claim 29
Dependent Claim
23 words
A set of masks according to claim 24, wherein the second mask has plural alignment marks each formed around a corresponding chip pattern.
References Cited (Backward Citations)
US4475811A
Cited
US4676630A
Cited
US4998134A
Cited
US4734746A
Cited
DE3727453A1
Cited
US4812661A
Cited
US4906326A
Cited
US5008703A
Cited
US5087537A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-12 | 1999-09-11 | 2000-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-12 | 2003-09-11 | 2004-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-12 | 2007-09-11 | 2008-03-12 | $7700.00 | Window Closed / Lapsed |