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US5496437A Expired / Lapsed US ⏱️ 0.0 years remaining

Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films

Assignee: Sharp Corp
•
Filing: 1993-06-10
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Granted: 1996-03-05
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Expires: 2013-06-10
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Abstract

Abstract A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO 2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O 2 mixed with either CClF 2 or CHClFCF 3 .

Inventors

  • 👤 Seshu B. Desu
  • 👤 Wei Pan
  • 👤 Dilip P. Vijay

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 04:15
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10F; H10F71/00; H10F71/138; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/28; H10P50/282; H10P50/283; H10P50/285; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 45 words
A method of reactive ion etching a material that includes at least one of RuO 2 and lead zirconate titanate, comprising: placing the material into a chamber, the chamber containing CHClFCF 3 , and producing a glow discharge in the chamber to etch the material.
Claim 2
Independent Claim 45 words
A method of reactive ion etching a material that includes at least one of RuO 2 and lead zirconate titanate, comprising: placing the material into a chamber, the chamber containing CHClFCF 3 , and producing a glow discharge in the chamber to etch the material.
Claim 3
Dependent Claim 16 words
The method of claim 1, wherein the material includes both RuO 2 and lead zirconate titanate.
Claim 4
Dependent Claim 14 words
The method of claim 2, wherein the glow discharge is produced by radio frequency.
Claim 5
Dependent Claim 16 words
The method of claim 3, wherein the radio frequency power is between 125 and 200 watts.
Claim 6
Dependent Claim 12 words
The method of claim 1, wherein the chamber includes O 2 .
Claim 7
Dependent Claim 26 words
The method of claim 5, wherein the O 2 content in the chamber is between 10% and 50% of the total gas content in the chamber.
Claim 8
Dependent Claim 18 words
The method of claim 5, wherein the gas pressure in the chamber is less than about 175 mTorr.
Claim 9
Independent Claim 73 words
A method of patterning a semiconductor device that includes at least one of RuO 2 and lead zirconate titanate, comprising: applying a mask over the material which covers a portion of the material and leaves exposed another portion of the material, placing the material with the applied mask into a chamber including CHClFCF 3 , and producing a glow discharge in the chamber to reactively ion etch the exposed portion of the material.
Claim 10
Independent Claim 73 words
A method of patterning a semiconductor device that includes at least one of RuO 2 and lead zirconate titanate, comprising: applying a mask over the material which covers a portion of the material and leaves exposed another portion of the material, placing the material with the applied mask into a chamber including CHClFCF 3 , and producing a glow discharge in the chamber to reactively ion etch the exposed portion of the material.
Claim 11
Dependent Claim 34 words
The method of claim 8, wherein the device includes both lead zirconate titanate and RuO 2 , and the lead zirconate titanate functions as a dielectric and the RuO 2 functions as an electrode.
Claim 12
Dependent Claim 14 words
The method of claim 8, wherein the glow discharge is produced by radio frequency.

References Cited (Backward Citations)

US4963701A Cited
US5109357A Cited
US5185689A Cited
US5254217A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-03-05 1999-09-04 2000-03-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-03-05 2003-09-04 2004-03-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-03-05 2007-09-04 2008-03-05 $7700.00 Window Closed / Lapsed

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