US4963701A
Expired / Lapsed
US
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Circuit board
Assignee: Toshiba Corp
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Filing: 1989-01-24
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Granted: 1990-10-16
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Expires: 2009-01-24
Abstract
Abstract Disclosed is an aluminum nitride thin film circuit board having an aluminum nitride substrate and a conductive thin film pattern formed on the substrate. The conductive thin film pattern has a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ti/Pd/Au, Ti/Pt/Au, Ni/Au, Cr/Au, and Cr/Cu/Au, and a boundary layer of Al-N-M-O (M is Ti, Ni, or Cr) is formed between the substrate and the conductive thin film pattern. Since the boundary layer is formed, bonding properties between the substrate and the conductive thin film pattern are improved. In particular, when the boundary layer contains 0.02 to 30 atomic % of oxygen, a higher bonding strength can be obtained.
Inventors
- 👤 Takaaki Yasumoto
- 👤 Nobuo Iwase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:56
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/38; H05K3/388; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/67; H10W70/69; H10W70/692; H05K1/00; H05K1/02; H05K1/03; H05K1/0306
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
68 words
An aluminum nitride thin film circuit board comprising an aluminum nitride substrate and a conductive thin film pattern formed on said substrate, wherein said conductive thin film pattern has a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ti/Pd/Au, Ti/Pt/Au, Ni/Au, Cr/Au, and Cr/Cu/Au, and a boundary layer of Al-N-M-O (M is Ti, Ni, or Cr) is formed between said substrate and said conductive thin film pattern.
Claim 2
Dependent Claim
68 words
An aluminum nitride thin film circuit board comprising an aluminum nitride substrate and a conductive thin film pattern formed on said substrate, wherein said conductive thin film pattern has a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ti/Pd/Au, Ti/Pt/Au, Ni/Au, Cr/Au, and Cr/Cu/Au, and a boundary layer of Al-N-M-O (M is Ti, Ni, or Cr) is formed between said substrate and said conductive thin film pattern.
Claim 3
Dependent Claim
19 words
A circuit board according to claim 1, wherein said boundary layer contains 0.02 to 30 atomic % of oxygen.
Claim 4
Dependent Claim
19 words
A circuit board according to claim 1, wherein said boundary layer has a thickness of 5 to 500 nm.
Claim 5
Dependent Claim
24 words
A circuit board according to claim 1, wherein said aluminum nitride substrate has an average linear surface roughness of not more than 800 nm.
Claim 6
Dependent Claim
26 words
A circuit board according to claim 1, wherein said aluminum nitride substrate comprises aluminum nitride crystals having an average particle size of 0.5 to 20 μm.
Claim 7
Dependent Claim
48 words
A circuit board according to claim 1, wherein said conductive thin film pattern comprises a bonding layer having a thickness of 10 to 900 nm, a barrier layer having a thickness of 50 to 1,000 nm, and a low-resistance layer having a thickness of 50 to 9,000 nm.
Claim 8
Dependent Claim
37 words
A circuit board according to claim 1, wherein said conductive thin film pattern comprises a bonding layer having a thickness of 10 to 900 nm and a low-resistance layer having a thickness of 50 to 9,000 nm.
Claim 9
Dependent Claim
43 words
An aluminum nitride thin film circuit board comprising an aluminum nitride substrate and a conductive thin film pattern formed on said substrate, wherein said conductive thin film pattern comprises a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ni/Au, Cr/Au, and Cr/Cu/Au.
Claim 10
Dependent Claim
43 words
An aluminum nitride thin film circuit board comprising an aluminum nitride substrate and a conductive thin film pattern formed on said substrate, wherein said conductive thin film pattern comprises a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ni/Au, Cr/Au, and Cr/Cu/Au.
Claim 11
Dependent Claim
24 words
A circuit board according to claim 8, wherein said aluminum nitride substrate has an average linear surface roughness of not more than 800 nm.
Claim 12
Dependent Claim
26 words
A circuit board according to claim 8, wherein said aluminum nitride substrate comprises aluminum nitride crystals having an average particle size of 0.5 to 20 μm.
Claim 13
Dependent Claim
48 words
A circuit board according to claim 8, wherein said conductive thin film pattern comprises a bonding layer having a thickness of 10 to 900 nm, a barrier layer having a thickness of 50 to 1,000 nm, and a low-resistance layer having a thickness of 50 to 9,000 nm.
Claim 14
Dependent Claim
37 words
A circuit board according to claim 8, wherein said conductive thin film pattern comprises a bonding layer having a thickness of 10 to 900 nm and a low-resistance layer having a thickness of 50 to 9,000 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |