Patent US5494846A successfully refreshed from Google Patents.
US5494846A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1994-12-13
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Granted: 1996-02-27
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Expires: 2014-12-13
Abstract
Abstract Oxygen ions are partially implanted into a semiconductor substrate 1 to form an oxygen ion implantation area. Then, a trench 2 surrounding the oxygen ion implantation area is formed in the semiconductor substrate 1 so as to remove the outer peripheral portion of the oxygen ion implantation area. Then, the semiconductor substrate 1 are heat treated to turn the oxygen ion implantation area into a buried oxide film 4 which is stable. Then, an insulating film 3 is buried into the trench 2.
Inventors
- 👤 Toru Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:52
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1908; H10W10/011; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
128 words
Method of manufacturing a semiconductor device in which a buried oxide film is formed within a semiconductor substrate and in which an insulating film is buried within a trench formed so as to contact the perimeter of the buried oxide film, comprising steps of: selectively implanting oxygen ions into a portion of said semiconductor substrate to form an oxygen ion implantation area adapted for forming said buried oxide film; forming said trench surrounding said oxygen ion implantation area in said semiconductor substrate so as to remove the side edge peripheral portion of said oxygen ion implantation area; heat treating said semiconductor substrate having said trench to turn said oxygen ion implantation area into said buried oxide film which is stable; and burying said insulating film into said trench.
Claim 2
Dependent Claim
128 words
Method of manufacturing a semiconductor device in which a buried oxide film is formed within a semiconductor substrate and in which an insulating film is buried within a trench formed so as to contact the perimeter of the buried oxide film, comprising steps of: selectively implanting oxygen ions into a portion of said semiconductor substrate to form an oxygen ion implantation area adapted for forming said buried oxide film; forming said trench surrounding said oxygen ion implantation area in said semiconductor substrate so as to remove the side edge peripheral portion of said oxygen ion implantation area; heat treating said semiconductor substrate having said trench to turn said oxygen ion implantation area into said buried oxide film which is stable; and burying said insulating film into said trench.
Claim 3
Dependent Claim
31 words
Method of manufacturing a semiconductor device as set forth in claim 1, wherein said oxygen ions are implanted in an inclined direction relative to the normal line of said semiconductor substrate.
Claim 4
Dependent Claim
39 words
Method of manufacturing a semiconductor device as set forth in claim 1, wherein said trench is formed deeper than the sum of the projected range as said oxygen ions are implanted and of three times of the standard deviation.
Claim 5
Dependent Claim
42 words
Method of manufacturing a semiconductor device as set forth in claim 1, wherein said trench is formed so as to also remove a semiconductor layer on said oxygen ion implantation area at an inner region adjacent to the outer peripheral portion thereof.
Claim 6
Dependent Claim
22 words
Method of manufacturing a semiconductor device as set forth in claim 1, wherein a silicon substrate is used as said semiconductor substrate.
Claim 7
Dependent Claim
42 words
Method of manufacturing a semiconductor device as set forth in claim 1, wherein an oxide film or a laminated film comprising a first oxide film, nitride film and a second oxide film is used as said insulating film buried within said trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-26 | 1999-08-28 | 2000-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-26 | 2003-08-28 | 2004-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-26 | 2007-08-28 | 2008-02-27 | $7700.00 | Window Closed / Lapsed |