JPS53148394A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-05-31
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Granted: —
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Expires: 1997-05-31
Abstract
Abstract PURPOSE: To manufacture single crystal region with good quality, by laminating epitaxial layer on high concentration impurity layer on a substrate, providing grooves reaching the layer from the surface, and making the high concentration layer into high resistance and oxidizing the side surface of the grooves through the anodic oxidation and heat treatment. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hitoshi Takahashi
- 👤 Akira Okubo
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 05:17
CPC Classifications
—
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