Patent US5639267A successfully refreshed from Google Patents.
Patent US3022593A successfully refreshed from Google Patents.
Patent US5494711A successfully refreshed from Google Patents.
US5494711A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of preparing InSb thin film
Assignee: Murata Manufacturing Co Ltd
•
Filing: 1994-01-11
•
Granted: 1996-02-27
•
Expires: 2014-01-11
Abstract
Abstract Disclosed herein is a method of preparing an InSb thin film, which comprises a step of physically sticking InSb powder onto a major surface of a substrate, and a step of depositing an InSb thin film on the major surface of the substrate provided with the as-stuck InSb powder by a method such as vacuum evaporation.
Inventors
- 👤 Toshikazu Takeda
- 👤 Yoshifumi Ogiso
- 👤 Takuji Nakagawa
- 👤 Atsuo Senda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:03
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; C23C14/02; H; H10; H10F; H10F71/00; H10F71/127; H10F71/1276; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
43 words
A method of preparing an InSb thin film, comprising the steps of: physically sticking InSb powder onto a major surface of a substrate so as to incompletely cover said surface; and depositing an InSb thin film on said major surface of said substrate.
Claim 2
Independent Claim
43 words
A method of preparing an InSb thin film, comprising the steps of: physically sticking InSb powder onto a major surface of a substrate so as to incompletely cover said surface; and depositing an InSb thin film on said major surface of said substrate.
Claim 3
Dependent Claim
35 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said sticking step comprises the step of sticking said InSb powder onto said major surface of said substrate by electrostatic force.
Claim 4
Dependent Claim
44 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said sticking step comprises the steps of: dipping said substrate in a suspension containing said InSb powder being dispersed therein, and applying ultrasonic waves to said substrate in said suspension.
Claim 5
Dependent Claim
61 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said sticking step comprises the steps of: dipping said substrate in a suspension containing said InSb powder being dispersed therein, applying ultrasonic waves to said substrate in said suspension, cleaning said major surface of said substrate with ultrasonic waves, and heat-treating said major surface of said substrate.
Claim 6
Dependent Claim
62 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said sticking step comprises the steps of: coating said major surface of said substrate with a liquid for forming an inorganic coating, sticking said InSb powder onto said coated major surface, and forming said inorganic coating on said major surface onto which said InSb powder has been stuck.
Claim 7
Dependent Claim
22 words
A method of preparing an InSb thin film in accordance with claim 5, wherein said inorganic coating is an SiO 2 coating.
Claim 8
Dependent Claim
29 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said deposition step comprises the step of depositing an InSb thin film by vacuum evaporation.
Claim 9
Dependent Claim
30 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said deposition step comprises the step of depositing an InSb thin film by molecular beam epitaxy.
Claim 10
Dependent Claim
29 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said deposition step comprises the step of depositing an InSb thin film by laser ablation.
Claim 11
Dependent Claim
28 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said deposition step comprises the step of depositing an InSb thin film by sputtering.
Claim 12
Dependent Claim
63 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said substrate is selected from the group consisting of an Si substrate having an SiO 2 film, an Si substrate having a film of silicon nitrides, an Si substrate having an Al 2 O 3 film, a glass substrate, a ferrite substrate, an Si substrate and a GaAs substrate.
Claim 13
Dependent Claim
20 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said InSb powder is polycrystalline powder.
Claim 14
Dependent Claim
20 words
A method of preparing an InSb thin film in accordance with claim 1, wherein said InSb powder is single-crystalline powder.
Claim 15
Dependent Claim
23 words
A method in accordance with claim 2, wherein said deposition step comprises the step of depositing an InSb thin film by vacuum evaporation.
Claim 16
Dependent Claim
24 words
A method in accordance with claim 2, wherein said deposition step comprises the step of depositing an InSb thin film by molecular beam epitaxy.
Claim 17
Dependent Claim
23 words
A method in accordance with claim 2, wherein said deposition step comprises the step of depositing an InSb thin film by laser ablation.
Claim 18
Dependent Claim
22 words
A method in accordance with claim 2, wherein said deposition step comprises the step of depositing an InSb thin film by sputtering.
Claim 19
Dependent Claim
57 words
A method in accordance with claim 2, wherein said substrate is selected from the group consisting of an Si substrate having an SiO 2 film, an Si substrate having a film of silicon nitrides, an Si substrate having an Al 2 O 3 film, a glass substrate, a ferrite substrate, an Si substrate and a GaAs substrate.
Claim 20
Dependent Claim
14 words
A method in accordance with claim 2, wherein said InSb powder is polycrystalline powder.
Claim 21
Dependent Claim
14 words
A method in accordance with claim 2, wherein said InSb powder is single-crystalline powder.
References Cited (Backward Citations)
US3294583A
Cited
US4177298A
Cited
US4463028A
Cited
US4448632A
Cited
US4474829A
Cited
US4550031A
Cited
US4713257A
Cited
US4808432A
Cited
US5113473A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-26 | 1999-08-28 | 2000-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-26 | 2003-08-28 | 2004-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-26 | 2007-08-28 | 2008-02-27 | $7700.00 | Window Closed / Lapsed |