US5113473A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nonlinear, optical thin-films and manufacturing method thereof
Assignee: Panasonic Holdings Corp
•
Filing: 1991-09-03
•
Granted: 1992-05-12
•
Expires: 2011-09-03
Abstract
Abstract Nonlinear, optical thin-films comprising a plurality of island structures of semiconductor ultra-fine particles and a plurality of continuous films of an optically transparent material, said island structures and said continuous films being applied alternately on a substrate. A method for manufacturing nonlinear, optical thin-films comprising the steps of: (a) providing a substrate; (b) depositing an island structure of semiconductor ultra-fine particles on the substrate or a continuous film; and (c) depositing the continuous film of optically transparent substance on the island structure; (d) the steps (b) and (c) of depositing an island structure and the continuous film being performed alternately.
Inventors
- 👤 Masaru Yoshida
- 👤 Yoshio Manabe
- 👤 Tsuneo Mitsuyu
- 👤 Ichiro Tanahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:51
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/355
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
37 words
Nonlinear, optical thin-films comprising a plurality of island structures of semiconductor ultra-fine particles and a plurality of continuous films of an optically transparent material, said island structures and said continuous films being applied alternately on a substrate.
Claim 2
Dependent Claim
37 words
Nonlinear, optical thin-films comprising a plurality of island structures of semiconductor ultra-fine particles and a plurality of continuous films of an optically transparent material, said island structures and said continuous films being applied alternately on a substrate.
Claim 3
Dependent Claim
41 words
The nonlinear, optical thin-films according to claim 1, wherein a length of semiconductor ultra-fine particles in a direction perpendicular to the substrate plane is equal to or less than that of continuous film in a direction perpendicular to the substrate plane.
Claim 4
Dependent Claim
34 words
The nonlinear, optical thin-films according to claim 1, wherein the size of said semiconductor ultra-fine particles is larger than the Bohr radius of excitons and small enough to realize the quantum size effect substantially.
Claim 5
Independent Claim
63 words
A method for manufacturing nonlinear, optical thin-films comprising the steps of: (a) providing a substrate; (b) depositing an island structure of semiconductor ultra-fine particles on the substrate or a continuous film; and (c) depositing the continuous film of optically transparent substance on the island structure; (d) the steps (b) and (c) of depositing an island structure and the continuous film being performed alternately.
Claim 6
Independent Claim
63 words
A method for manufacturing nonlinear, optical thin-films comprising the steps of: (a) providing a substrate; (b) depositing an island structure of semiconductor ultra-fine particles on the substrate or a continuous film; and (c) depositing the continuous film of optically transparent substance on the island structure; (d) the steps (b) and (c) of depositing an island structure and the continuous film being performed alternately.
Claim 7
Dependent Claim
29 words
The method according to claim 4, wherein in the step of depositing an island structure, the size of semiconductor ultra-fine particles is controlled by substrate temperature and deposition time.
Claim 8
Dependent Claim
42 words
The method according to claim 4, wherein a length of continuous film in a direction perpendicular to the substrate plane is controlled to be equal to or larger than that of semiconductor ultra-fine particles in a direction perpendicular to the substrate plane.
Claim 9
Dependent Claim
40 words
The method according to claim 4, wherein a deposition apparatus is used for deposition in said steps of depositing an island structure and the continuous film, and the island structure is formed by ultra-fine particles grown in the deposition process.
Claim 10
Dependent Claim
28 words
The method according to claim 7, wherein said deposition apparatus is an evaporation apparatus having two evaporation sources for the semiconductor material and for the optically transparent material.
Claim 11
Dependent Claim
27 words
The method according to claim 7, wherein said deposition apparatus is a multi-target sputtering system having targets for the semiconductor material and for the optically transparent substance.
References Cited (Backward Citations)
US3934061A
Cited
US4189521A
Cited
US4206251A
Cited
US4680045A
Cited
US4818616A
Cited
US4877298A
Cited
US4861129A
Cited
US4796971A
Cited
US4886339A
Cited
US5013129A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-12 | 1995-11-11 | 1996-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-12 | 1999-11-11 | 2000-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-12 | 2003-11-11 | 2004-05-12 | $7700.00 | Window Closed / Lapsed |