US4550031A
Expired / Lapsed
US
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Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth
Assignee: Honeywell Inc
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Filing: 1984-11-26
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Granted: 1985-10-29
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Expires: 2004-11-26
Abstract
Abstract A method of modulation doping GaAs, (Al,Ga)As and related compounds with silicon ions during molecular beam epitaxy (MBE) growth.
Inventors
- 👤 Jonathan K. Abrokwah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:43
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B23/00; C30B23/002; C30B23/02; C30B23/08
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
106 words
The method of measuring silicon dopant in the modulation doping of GaAs and (Al,Ga)As layers with silicon ions during molecular beam epitaxial growth, the method comprising the steps of: forming in vacuum a molecular beam of semiconductor materials Ga, As and optionally Al; epitaxially depositing said materials on a GaAs substrate from said molecular beam to form an epitaxial layer; forming in said vacuum a low energy silicon ion (Si + ) beam for doping; measuring the flux of said silicon ion beam to control the reproducibility of the doping; and, directing said silicon ion beam to said epitaxial layer while said layer is being deposited.
Claim 2
Independent Claim
106 words
The method of measuring silicon dopant in the modulation doping of GaAs and (Al,Ga)As layers with silicon ions during molecular beam epitaxial growth, the method comprising the steps of: forming in vacuum a molecular beam of semiconductor materials Ga, As and optionally Al; epitaxially depositing said materials on a GaAs substrate from said molecular beam to form an epitaxial layer; forming in said vacuum a low energy silicon ion (Si + ) beam for doping; measuring the flux of said silicon ion beam to control the reproducibility of the doping; and, directing said silicon ion beam to said epitaxial layer while said layer is being deposited.
Claim 3
Dependent Claim
56 words
The method according to claim 1, in which said step of forming a low energy silicon ion beam further comprises: forming in said vacuum a high purity source of neutral silicon atoms; passing said neutral silicon atoms through a second region where they are bombarded and ionized by energetic electrons produced from a hot cathode filament.
Claim 4
Dependent Claim
20 words
The method according to claim 2 in which said source of neutral silicon atoms is from flowing neutral silane gas.
Claim 5
Dependent Claim
22 words
The method according to claim 2 in which said source of neutral silicon atoms is a high purity thermal neutral silicon beam.
Claim 6
Independent Claim
105 words
The method of measuring silicon dopant in the modulation doping of compound semiconductors with silicon ions during molecular beam epitaxial growth, the method comprising the steps of: forming in vacuum from effusion cells molecular beams of semiconductor materials constituting the compound semiconductor; epitaxially depositing said materials on a compatible substrate from said molecular beams to form an epitaxial layer; forming in said vacuum a low energy silicon ion (Si + ) beam for doping; measuring the flux of said silicon ion beam to control the reproducibility of the doping; and, directing said silicon ion beam to said epitaxial layer while said layer is being deposited.
Claim 7
Independent Claim
105 words
The method of measuring silicon dopant in the modulation doping of compound semiconductors with silicon ions during molecular beam epitaxial growth, the method comprising the steps of: forming in vacuum from effusion cells molecular beams of semiconductor materials constituting the compound semiconductor; epitaxially depositing said materials on a compatible substrate from said molecular beams to form an epitaxial layer; forming in said vacuum a low energy silicon ion (Si + ) beam for doping; measuring the flux of said silicon ion beam to control the reproducibility of the doping; and, directing said silicon ion beam to said epitaxial layer while said layer is being deposited.
Claim 8
Dependent Claim
56 words
The method according to claim 5, in which said step of forming a low energy silicon ion beam further comprises: forming in said vacuum a high purity source of neutral silicon atoms; passing said neutral silicon atoms through a second region where they are bombarded and ionized by energetic electrons produced from a hot cathode filament.
Claim 9
Dependent Claim
20 words
The method according to claim 6 in which said source of neutral silicon atoms is from flowing neutral silane gas.
Claim 10
Dependent Claim
22 words
The method according to claim 6 in which said source of neutral silicon atoms is a high purity thermal neutral silicon beam.
Claim 11
Independent Claim
112 words
The method of measuring silicon dopant in the modulation doping of selected 3-5, 4-6 and 2-6 compound semiconductor layers with silicon ions during molecular beam epitaxial growth, the method comprising the steps of: forming in vacuum from effusion cells molecular beams of semiconductor materials constituting the selected compound semiconductor; epitaxially depositing said materials on a compatible substrate from said molecular beam to form an epitaxial layer; forming in said vacuum a low energy silicon ion (Si + ) beam for doping; measuring the flux of said silicon ion beam to control the reproducibility of the doping; and, directing said silicon ion beam to said epitaxial layer while said layer is being deposited.
Claim 12
Independent Claim
112 words
The method of measuring silicon dopant in the modulation doping of selected 3-5, 4-6 and 2-6 compound semiconductor layers with silicon ions during molecular beam epitaxial growth, the method comprising the steps of: forming in vacuum from effusion cells molecular beams of semiconductor materials constituting the selected compound semiconductor; epitaxially depositing said materials on a compatible substrate from said molecular beam to form an epitaxial layer; forming in said vacuum a low energy silicon ion (Si + ) beam for doping; measuring the flux of said silicon ion beam to control the reproducibility of the doping; and, directing said silicon ion beam to said epitaxial layer while said layer is being deposited.
Claim 13
Dependent Claim
56 words
The method according to claim 5, in which said step of forming a low energy silicon ion beam further comprises: forming in said vacuum a high purity source of neutral silicon atoms; passing said neutral silicon atoms through a second region where they are bombarded and ionized by energetic electrons produced from a hot cathode filament.
Claim 14
Dependent Claim
20 words
The method according to claim 10 in which said source of neutral silicon atoms is from flowing neutral silane gas.
Claim 15
Dependent Claim
22 words
The method according to claim 10 in which said source of neutral silicon atoms is a high purity thermal neutral silicon beam.
References Cited (Backward Citations)
No citation records indexed.
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