Patent US5491108A successfully refreshed from Google Patents.
US5491108A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor integrated circuit device having interplayer insulating film covering substrate
Assignee: NEC Corp
•
Filing: 1993-12-10
•
Granted: 1996-02-13
•
Expires: 2013-12-10
Abstract
Abstract A method which can markedly improve the flatness of a semiconductor integrated circuit device by forming selectively a layer insulating film on an underlying substrate having level differences is disclosed. First, a Ti--W alloy film is formed on a member which brings about level differences due to wirings or the like, then a PECVD silicon oxide film is formed followed by a plasma treatment using CF 4 gas. Further, a silicon oxide film is deposited by atmospheric pressure CVD using ozone and tetraethoxysilane. Then, the surface is flattened by etchback using an organic SOG film, and a silicon oxide film is formed by plasma excited CVD.
Inventors
- 👤 Mieko Suzuki
- 👤 Tetsuya Homma
- 👤 Yukinobu Murao
- 👤 Takaho Tanigawa
- 👤 Hiroki Koga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/092
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
143 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: covering a semiconductor substrate with a first insulating film; selectively forming a first conductive layer on said first insulating film, said first conductive layer having a top layer containing at least one of titanium and tungsten; combining fluorine with said at least one of titanium and tungsten on a surface portion of said top layer of said first conductive layer; and depositing, by means of chemical vapor deposition using an organic silicon compound and ozone, a silicon oxide film on a surface of said first insulating film and on said surface portion of said top layer of said first conductive layer, wherein said first conductive layer has fluorine combined with said at least one of titanium and tungsten on said surface portion of said top layer during said depositing step.
Claim 2
Independent Claim
143 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: covering a semiconductor substrate with a first insulating film; selectively forming a first conductive layer on said first insulating film, said first conductive layer having a top layer containing at least one of titanium and tungsten; combining fluorine with said at least one of titanium and tungsten on a surface portion of said top layer of said first conductive layer; and depositing, by means of chemical vapor deposition using an organic silicon compound and ozone, a silicon oxide film on a surface of said first insulating film and on said surface portion of said top layer of said first conductive layer, wherein said first conductive layer has fluorine combined with said at least one of titanium and tungsten on said surface portion of said top layer during said depositing step.
Claim 3
Dependent Claim
72 words
The method as claimed in claim 1, further comprising a step of depositing a second insulating film to cover said first conductive layer, wherein said combining step is performed by anisotropic etching of said second insulating film by reactive ion etching using a fluorine compound gas until said first conductive layer is exposed, thereby selectively leaving said second insulating film to form insulating sidewalls on side faces of said first conductive layer.
Claim 4
Dependent Claim
32 words
The method as claimed in claim 1, further comprising the step of forming an organic film by spin coating on said silicon oxide film and carrying out etch-back on said organic film.
Claim 5
Dependent Claim
33 words
The method as claimed in claim 1, wherein said first conductive layer is selected from a group consisting of a titanium film, titanium nitride film, a tungsten film or a titanium-tungsten alloy film.
Claim 6
Independent Claim
52 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: fluorinating elevated conductive surfaces of said semiconductor device, wherein said conductive surfaces contain at least one of titanium and tungsten; and depositing a silicon oxide film on said semiconductor integrated circuit device and over said fluorinated elevated conductive surfaces.
Claim 7
Independent Claim
52 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: fluorinating elevated conductive surfaces of said semiconductor device, wherein said conductive surfaces contain at least one of titanium and tungsten; and depositing a silicon oxide film on said semiconductor integrated circuit device and over said fluorinated elevated conductive surfaces.
Claim 8
Dependent Claim
26 words
The method as claimed in claim 5, wherein said fluorinating step is performed by anisotropic etching by a reactive ion etching using a fluorine compound gas.
References Cited (Backward Citations)
US4874720A
Cited
US4900257A
Cited
US4954423A
Cited
US4872947A
Cited
US4965226A
Cited
US5231053A
Cited
US5305519A
Cited
US5298458A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-12 | 1999-08-14 | 2000-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-12 | 2003-08-14 | 2004-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-12 | 2007-08-14 | 2008-02-13 | $7700.00 | Window Closed / Lapsed |