Patent US5488623A successfully refreshed from Google Patents.
US5488623A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
Assignee: Fuji Electric Co Ltd
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Filing: 1994-08-12
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Granted: 1996-01-30
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Expires: 2014-08-12
Abstract
Abstract A semiconductor laser device includes a lead frame for electrically controlling a laser diode element having at least one end lace for emitting a laser beam and for mechanically supporting the laser diode element on a planar major surface thereof with a support member interposed therebetween. A sealing resin layer, transparent to the passage of the laser beam, covers at least the laser diode element on the lead frame in a sealing manner. To improve the light emitting point stability of the laser diode element, when the cross section of the planar major surface of the lead frame is parallel to the light emitting end face, a horizontal direction is the longitudinal direction of the cross section of the lead frame, a horizontal center line defines the center of the cross section of the lead frame, and a vertical center line defines the center as viewed in the vertical direction, the sealing resin layer is shaped symmetrically with respect to the vertical center line.
Inventors
- 👤 Shoji Kitamura
- 👤 Yoichi Shindo
- 👤 Akira Amano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:30
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/12; G11B7/22; G11B7/125; G11B7/127; H; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/023; H01S5/0232; G11B7/08; G11B7/09; G11B7/0908; H01S5/02208; H01S5/02212; H01S5/02218; H01S5/02234; H01S5/028; H01S5/06; H01S5/062; H01S5/06209; H01S5/06216; H01S5/068; H01S5/0683; H10; H10W; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
214 words
A semiconductor laser device comprising a laser diode element having at least one end face for emitting a laser beam, a lead frame for electrically controlling the laser diode element and having a planar major surface for mechanically supporting the laser diode element with a support member interposed therebetween, a sealing resin layer allowing the laser beam to pass therethrough and covering at least the laser diode element on the lead frame in a sealing manner, and an external fixing board, wherein a mounting surface of the sealing resin layer, placed against the external fixing board, is uniformly separated from an adjacent surface of the lead frame by a distance ΔX1 (mm) defined by the following formula: ΔX1≦(ΔL/M)/(α×ΔT) where α is a linear expansion coefficient of the sealing resin layer, ΔT is a change in ambient temperature, ΔL is a tolerable shift of a laser beam spot on a divided photo diode of a pick-up device included with the semiconductor laser device in an optical disc system, and M is an image forming magnification defined by a magnification of a lens system including at least one lens positioned along a distance in an optical path between a light emitting point of the laser diode element and the divided photo diode of the pick-up device.
Claim 2
Dependent Claim
214 words
A semiconductor laser device comprising a laser diode element having at least one end face for emitting a laser beam, a lead frame for electrically controlling the laser diode element and having a planar major surface for mechanically supporting the laser diode element with a support member interposed therebetween, a sealing resin layer allowing the laser beam to pass therethrough and covering at least the laser diode element on the lead frame in a sealing manner, and an external fixing board, wherein a mounting surface of the sealing resin layer, placed against the external fixing board, is uniformly separated from an adjacent surface of the lead frame by a distance ΔX1 (mm) defined by the following formula: ΔX1≦(ΔL/M)/(α×ΔT) where α is a linear expansion coefficient of the sealing resin layer, ΔT is a change in ambient temperature, ΔL is a tolerable shift of a laser beam spot on a divided photo diode of a pick-up device included with the semiconductor laser device in an optical disc system, and M is an image forming magnification defined by a magnification of a lens system including at least one lens positioned along a distance in an optical path between a light emitting point of the laser diode element and the divided photo diode of the pick-up device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |