US4951291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device with a protective film on the facets
Assignee: Sharp Corp
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Filing: 1989-04-07
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Granted: 1990-08-21
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Expires: 2009-04-07
Abstract
Abstract A semiconductor laser device with a protective film on the facets, wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and the other of which is a dielectric film of high refractive index, said multi-layered dielectric film which covers at least one of the facets therewith being a light-permeable film with a reflectivity of 30% or less.
Inventors
- 👤 Nobuyuki Miyauchi
- 👤 Hiroshi Hayashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:13
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
127 words
In a semiconductor laser device with a protective film on both the light-emitting facet and the other facet opposed to the light-emitting facet, said protective film is made of a multi-layered dielectric film composed of alternative layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and the other of which is a second dielectric film of high refractive index, the kind of the film which is closest to the facet being the first dielectric film, and the thickness of each layer of said multi-layered dielectric film which covers the light-emitting facet therewith being selected so as to provide a reflectivity of 30% or less to said multi-layered dielectric film which covers the light-emitting facet.
Claim 2
Dependent Claim
127 words
In a semiconductor laser device with a protective film on both the light-emitting facet and the other facet opposed to the light-emitting facet, said protective film is made of a multi-layered dielectric film composed of alternative layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and the other of which is a second dielectric film of high refractive index, the kind of the film which is closest to the facet being the first dielectric film, and the thickness of each layer of said multi-layered dielectric film which covers the light-emitting facet therewith being selected so as to provide a reflectivity of 30% or less to said multi-layered dielectric film which covers the light-emitting facet.
Claim 3
Dependent Claim
38 words
A semiconductor laser device with a protective film on the facets according to claim 1, wherein the first dielectric film is made of Al 2 O 3 and the second dielectric film is made of a-Si:H 2 .
Claim 4
Dependent Claim
66 words
A semiconductor laser device with a protective film on the facets according to claim 1, wherein said protective film on said light-emitting facet comprises a 2650 A Al 2 O 3 layer adjacent to said light-emitting facet, a 100 A a-Si:H 2 layer adjacent to said 2650 A Al 2 O 3 layer, and a 2167 A layer adjacent to said 100 A a-Si:H 2 layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-20 | 1994-02-19 | 1994-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-20 | 1998-02-19 | 1998-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-20 | 2002-02-19 | 2002-08-21 | $7700.00 | Window Closed / Lapsed |