EP0118746A2 — Semiconductor laser device

Claim 1

Independent Claim 80 words

In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer (2) and a second dielectric layer (3) on at least one of two facets of a resonator (11) and in which the refractive index of said first dielectric layer (2) is lower than that of said second dielectric layer (3), characterized in that said second dielectric layer (3) consists of an amorphous material containing silicon and hydrogen at its essential elements.

Claim 2

Dependent Claim 80 words

In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer (2) and a second dielectric layer (3) on at least one of two facets of a resonator (11) and in which the refractive index of said first dielectric layer (2) is lower than that of said second dielectric layer (3), characterized in that said second dielectric layer (3) consists of an amorphous material containing silicon and hydrogen at its essential elements.

Claim 3

Dependent Claim 32 words

The semiconductor-laser device as defined in claim 1 wherein said laminate of said first (2) and second (3) dielectric layers improves the refractive index of said facet on which they are deposited.

Claim 4

Dependent Claim 59 words

The semiconductor laser device as defined in claim 1 wherein the thickness of said first (2) and second (3) dielectric layers are substantially λ/4n 1 and λ/4n 2 , respectively, where X is the oscillation wave length of the laser and n 1 and n 2 are the refractive indices of said first (2) and second (3) dielectric layers.

Claim 5

Dependent Claim 33 words

The semiconductor laser device as defined in claim 1 wherein said amorphous material containing silicon and hydrogen as its essential constituent elements has a composition Si l-x H x (where 0.002 < x<0.4).

Claim 6

Dependent Claim 33 words

The semiconductor laser device as defined in claim 1 wherein said amorphous material containing silicon and hydrogen as its essential constituent elements has a composition Si l-x H x (where 0.03 < x<0.4).

Claim 7

Dependent Claim 37 words

The semiconductor laser device as defined in any of claims 1, 2, 3, 4 and 5 wherein a dielectric layer (1) for reducing the facet refractive index is disposed on the other of said two resonator facets.

Claim 8

Dependent Claim 46 words

The semiconductor laser device as defined in claim 6 wherein the thickness of said dielectric layer (1) for reducing the facet refractive index is substantially X/4n' where λ is the oscillation wave length of the laser and n' is the refractive index of said dielectric layer.

Claim 9

Dependent Claim 31 words

The semiconductor laser device as defined in any of claims 1 through 6 wherein a plurality of said laminates consisting of said first (2) and second (3) dielectric layers are deposited.

Claim 10

Dependent Claim 146 words

In a semiconductor laser device having dielectric films (1,2) on two facets for taking out the emitted optical output of a semiconductor laser, characterized in that a first dielectric film (2) having a low refractive index (n1), a second dielectric film (3) having a high refractive index (n 2 ), a third dielectric film (4) having a low refractive index (n 3 ) and a fourth dielectric film (5) having a high refractive index (n 4 ) are sequentially laminated on one of the two facets in the thickness of λ/4n 1 , λ/4n 2 , λ/4n 3 and λ/4n 4 (X=oscillation wavelength of the laser), respectively, and a fifth dielectric film (1) having a refractive index n 5 is deposited on the other facet in a thickness of λ/4n 5 (where n 5 , n 1 , n 3 <n 2 , n 4 ).

Claim 11

Dependent Claim 146 words

In a semiconductor laser device having dielectric films (1,2) on two facets for taking out the emitted optical output of a semiconductor laser, characterized in that a first dielectric film (2) having a low refractive index (n1), a second dielectric film (3) having a high refractive index (n 2 ), a third dielectric film (4) having a low refractive index (n 3 ) and a fourth dielectric film (5) having a high refractive index (n 4 ) are sequentially laminated on one of the two facets in the thickness of λ/4n 1 , λ/4n 2 , λ/4n 3 and λ/4n 4 (X=oscillation wavelength of the laser), respectively, and a fifth dielectric film (1) having a refractive index n 5 is deposited on the other facet in a thickness of λ/4n 5 (where n 5 , n 1 , n 3 <n 2 , n 4 ).

Claim 12

Dependent Claim 32 words

The semiconductor laser device as defined in claim 9 wherein a sixth dielectric film (6) is further deposited on said fourth dielectric film in a thickness of (n 6 : refractive index).

Claim 13

Dependent Claim 32 words

The semiconductor laser device as defined in claim 10 wherein said sixth dielectric film (6) consists of a SiO 2 film, Aℓ 2 O 3 film or Si 3 N 4 film.

Claim 14

Dependent Claim 53 words

The semiconductor laser device as defined in claim 9 wherein said fifth (1), first (2) and third (4) dielectric films consist of a SiO 2 film, Aℓ 2 O 3 film or Si 3 N 4 film while said second (3) and fourth (5) dielectric films consist of a hydrogen-containing amorphous Si film.

Semiconductor laser device

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag