US5488252A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Layout for radio frequency power transistors
Assignee: Infineon Technologies AG
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Filing: 1994-08-16
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Granted: 1996-01-30
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Expires: 2014-08-16
Abstract
Abstract A layout is provided for RF power transistors that reduces common lead inductance and its associated performance penalties. An RF transistor cell is rotated 90° with respect to a conventional RF transistor cell so as to located bond pads nearer the edge of a silicon die, reducing bond wire length and common lead inductance and thereby improving performance at high frequencies. The placement of bond pad and distribution of different parts of the transistor layout further reduces common lead inductance.
Inventors
- 👤 Ted Johansson
- 👤 Larry Leighton
- 👤 Ivar Hamberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 03:21
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10W44/00; H10W44/20; H10W44/226; H10W72/00; H10W72/50; H10W72/541; H10W72/5445; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
198 words
An RF power transistor comprising: a silicon die; a pair of interdigitated electrodes formed on the silicon die, each electrode having a multiplicity of parallel electrode fingers and each including at least one bond pad; regions of a first type of diffusion formed beneath electrode fingers of one electrode of the pair of interdigitated electrodes, and regions of a second type of diffusion formed beneath electrode fingers of another electrode of the pair of interdigitated electrodes; a first wire connected to a bond pad of said one electrode and extending in a direction predominantly parallel to the electrode fingers of the one electrode; and a second wire connected to a bond pad of said another electrode and extending in a direction predominantly parallel to the electrode fingers of said another electrode; wherein the silicon die is substantially rectangular and has a least dimension in a direction substantially parallel to the electrode fingers of the pair of interdigitated electrodes, and wherein at least one of the pair interdigitated electrodes includes a plurality of bonds pads, the apparatus further comprising at least one additional wire such that one wire is connected to each of said bond pads of each electrode.
Claim 2
Dependent Claim
198 words
An RF power transistor comprising: a silicon die; a pair of interdigitated electrodes formed on the silicon die, each electrode having a multiplicity of parallel electrode fingers and each including at least one bond pad; regions of a first type of diffusion formed beneath electrode fingers of one electrode of the pair of interdigitated electrodes, and regions of a second type of diffusion formed beneath electrode fingers of another electrode of the pair of interdigitated electrodes; a first wire connected to a bond pad of said one electrode and extending in a direction predominantly parallel to the electrode fingers of the one electrode; and a second wire connected to a bond pad of said another electrode and extending in a direction predominantly parallel to the electrode fingers of said another electrode; wherein the silicon die is substantially rectangular and has a least dimension in a direction substantially parallel to the electrode fingers of the pair of interdigitated electrodes, and wherein at least one of the pair interdigitated electrodes includes a plurality of bonds pads, the apparatus further comprising at least one additional wire such that one wire is connected to each of said bond pads of each electrode.
Claim 3
Dependent Claim
13 words
The apparatus of claim 1, wherein all of the wires are substantially parallel.
Claim 4
Dependent Claim
22 words
The apparatus of claim 1, wherein the plurality of bond pads of said one electrode are spaced apart at substantially equal intervals.
Claim 5
Dependent Claim
24 words
The apparatus of claim 3, wherein each bond pad of said another electrode is located substantially in the center of one of said intervals.
Claim 6
Dependent Claim
224 words
An RF power transistor comprising: a substrate; a collector lead formed at one side of the substrate and a base lead formed at an opposite side of the substrate; a silicon die; a pair of interdigitated electrodes formed on the silicon die, each electrode having a multiplicity of parallel electrode fingers extending in substantially a same direction as a direction between the collector lead to the base lead, each electrode including at least one bond pad; and regions of a first type of diffusion formed beneath electrode fingers of one electrode of the pair of interdigitated electrodes, and regions of a second type of diffusion formed beneath electrode fingers of another electrode of the pair of interdigitated electrodes; and a first wire connected to a bond pad of said one electrode and extending in said same direction; and a second wire connected to a bond pad of said another electrode and extending in said same direction; wherein the silicon die is substantially rectangular and has a least dimension in a direction substantially parallel to the electrode fingers of the pair of interdigitated electrodes, and wherein at least one of the pair of interdigitated electrodes includes a plurality of bond pads, the apparatus further comprising at least one additional wire such that one wire is connected to each of said bond pads of each electrode.
Claim 7
Dependent Claim
224 words
An RF power transistor comprising: a substrate; a collector lead formed at one side of the substrate and a base lead formed at an opposite side of the substrate; a silicon die; a pair of interdigitated electrodes formed on the silicon die, each electrode having a multiplicity of parallel electrode fingers extending in substantially a same direction as a direction between the collector lead to the base lead, each electrode including at least one bond pad; and regions of a first type of diffusion formed beneath electrode fingers of one electrode of the pair of interdigitated electrodes, and regions of a second type of diffusion formed beneath electrode fingers of another electrode of the pair of interdigitated electrodes; and a first wire connected to a bond pad of said one electrode and extending in said same direction; and a second wire connected to a bond pad of said another electrode and extending in said same direction; wherein the silicon die is substantially rectangular and has a least dimension in a direction substantially parallel to the electrode fingers of the pair of interdigitated electrodes, and wherein at least one of the pair of interdigitated electrodes includes a plurality of bond pads, the apparatus further comprising at least one additional wire such that one wire is connected to each of said bond pads of each electrode.
Claim 8
Dependent Claim
13 words
The apparatus of claim 5, wherein all of the wires are substantially parallel.
Claim 9
Dependent Claim
22 words
The apparatus of claim 5, wherein the plurality of bond pads of said one electrode are spaced apart at substantially equal intervals.
Claim 10
Dependent Claim
24 words
The apparatus of claim 7, wherein each bond pad of said another electrode is located substantially in the center of one of said intervals.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |