Power transistor device and method for making the same

Claim 2

A power transistor device comprising: a collector region made of a first conductivity type and having an upper surface; a base region made of a second conductivity type and provided within said collector region and having an upper surface flush with said upper surface of said collector region; an elongated resistor region provided within said base region and having said first conductivity type and having an upper surface flush with said upper surface of said base region, said elongated resistor region forming first and second emitter stabilizing resistances which are aligned substantially linearly; a first elongated emitter region provided within said base region located on one side of said elongated resistor region and extending in a direction of elongation parallel to said elongated resistor region and having an upper surface flush with said upper surface of said base region: a second elongated emitter region provided within said base region located on an opposite side of said elongated resistor region and extending in a direction of elongation parallel to said elongated resistor region and having an upper surface flush with said upper surface of said base region; connecting means for electrically connecting said first and second elongated emitter regions respectively with opposite ends of said elongated resistor region; and emitter electrode means connected to said elongated resistor region at an area between said first and second emitter stabilizing resistances.

Claim 3

A power transistor as claimed in claim 1, wherein said elongated resistor region and elongated emitter regions have the same length and are aligned side-by-side.

Claim 4

A power transistor device as claimed in claim 1, wherein said base electrode strip is formed in the same plane as that formed with first, second and median electrodes.

Claim 5

A power transistor device as claimed in claim 1, further comprising an emitter electrode strip extending above said first and second electrodes and above and perpendicularly crossing said base electrode strip, and having a portion thereof connected to said median electrode.

Claim 6

A power transistor device as claimed in claim 1, further comprising a collector electrode strip extending above and perpendicularly crossing said base electrode strip, and having a portion thereof connected to said collector region.

Claim 7

A power transistor device as claimed in claim 1, wherein said connecting means are electrodes.

Claim 8

A power transistor device as claimed in claim 1, wherein said collector region, base region, elongated resistor region and first and second elongated emitter regions define a transistor pair, said transistor pair being aligned in two orthogonal directions with said emitter electrode means connected in common.

Claim 9

A power transistor device comprising: a collector region made of a first conductivity type and having an upper surface; a base region made of a second conductivity type and provided within said collector region and having an upper surface flush with said upper surface of said collector region; an elongated resistor region provided within said base region and having said first conductivity type and having an upper surface flush with said upper surface of said base region; a first elongated emitter region provided within said base region located on one side of said elongated resistor region and extending in a direction of elongation parallel to said elongated resistor region, said first elongated emitter region having an upper surface flush with said upper surface of said base region; a second elongated emitter region provided within said base region located on an opposite side of said elongated resistor region and extending in a direction of elongation parallel to said elongated resistor region, said second elongated emitter region having an upper surface flush with said upper surface of said base region; an insulation layer extending over said collector region, base region, elongated resistor region and first and second elongated emitter regions, said insulation layer having emitter contact holes formed over said first and second elongated emitter regions, first resistor contact holes formed over opposite end areas of said elongated resistor region, and a second resistor contact hole formed over said elongated resistor region and spaced away from and between said first resistor contact holes, said first and second resistor contact holes being narrower in width than that of said elongated resistor region, said elongated resistor region being located to extend between said first and said second resistor contact holes, said elongated resistor region forming first and second emitter stabilizing resistances which are aligned substantially linearly; electrode means for electrically connecting said first and second emitter regions through said emitter contact holes, respectively, with opposite ends of said elongated resistor regions through said first resistor contact holes; and emitter electrode means connected to said elongated resistor region through said second resistor contact hole.

Claim 10

A power transistor device comprising: a collector region made of a first conductivity type and having an upper surface; a base region made of a second conductivity type and provided within said collector region and having an upper surface flush with said upper surface of said collector region; an elongated resistor region provided within said base region and having said first conductivity type and having an upper surface flush with said upper surface of said base region; a first elongated emitter region provided within said base region located on one side of said elongated resistor region and extending in a direction of elongation parallel to said elongated resistor region, said first elongated emitter region having an upper surface flush with said upper surface of said base region; a second elongated emitter region provided within said base region located on an opposite side of said elongated resistor region and extending in a direction of elongation parallel to said elongated resistor region, said second elongated emitter region having an upper surface flush with said upper surface of said base region; an insulation layer extending over said collector region, base region, elongated resistor region and first and second elongated emitter regions, said insulation layer having emitter contact holes formed over said first and second elongated emitter regions, first resistor contact holes formed over opposite end areas of said elongated resistor region, and a second resistor contact hole formed over said elongated resistor region and spaced away from and between said first resistor contact holes, said first and second resistor contact holes being narrower in width than that of said elongated resistor region, said elongated resistor region being located to extend between said first and said second resistor contact holes, said elongated resistor region forming first and second emitter stabilizing resistances which are aligned substantially linearly; electrode means for electrically connecting said first and second emitter regions through said emitter contact holes, respectively, with opposite ends of said elongated resistor regions through said first resistor contact holes; and emitter electrode means connected to said elongated resistor region through said second resistor contact hole.

Claim 11

A power transistor as claimed in claim 8, wherein said collector region, base region, elongated resistor region and first and second elongated emitter regions define a transistor pair, said transistor pair being aligned in two orthogonal directions with said emitter electrode means connected in common.