US4223335A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device body having identical isolated composite resistor regions
Assignee: Plessey Semiconductors Ltd
•
Filing: 1979-03-09
•
Granted: 1980-09-16
•
Expires: 1999-03-09
Abstract
Abstract A resistor comprises two identical resistor regions with each resistor region isolated within the semiconductor body by a P-N junction, and with one electrode-bearing end of each resistor region both connected together and to a common region surrounding the resistor regions within the semiconductor body, so that the common surrounding region is to be at the same potential level as the mid-point of the resistor considered as a whole.
Inventors
- 👤 Jeffrey Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:34
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/209; H10D1/00; H10D1/40; H10D1/43; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
132 words
A semiconductor device in a semiconductor body, the device comprising: a composite resistor comprising first and second resistor regions, an associated region of low resistivity material surrounding said resistor and forming with said composite resistor a P-N junction, said material having a resistivity less than that of said resistor, electrode means connected to one end of each of said first and second resistor regions and connected to said surrounding associated region, and a source of electrical potential of a given value is connected to the other end of one of said first and second resistor regions, whereby a potential of a fraction of said given value is applied by said electrode means to said surrounding region, said fraction selected to tend to reduce the effects of the resistance-voltage coefficients of said resistor.
Claim 2
Dependent Claim
132 words
A semiconductor device in a semiconductor body, the device comprising: a composite resistor comprising first and second resistor regions, an associated region of low resistivity material surrounding said resistor and forming with said composite resistor a P-N junction, said material having a resistivity less than that of said resistor, electrode means connected to one end of each of said first and second resistor regions and connected to said surrounding associated region, and a source of electrical potential of a given value is connected to the other end of one of said first and second resistor regions, whereby a potential of a fraction of said given value is applied by said electrode means to said surrounding region, said fraction selected to tend to reduce the effects of the resistance-voltage coefficients of said resistor.
Claim 3
Dependent Claim
82 words
A semiconductor device as claimed in claim 1 in which said first and second resistor regions are parts of a unitary resistor region having a midpoint, said electrode means comprising an electrode to connect said constituent first and second resistor regions to said surrounding region at said mid-point of said unitary resistor region, and said electrode means overlying a portion of said P-N junction between said unitary resistor region and said common surrounding region at said mid-point of said unitary resistor region.
Claim 4
Dependent Claim
146 words
A semiconductor device in a semiconductor body, said device comprising: (a) a composite resistor comprising first and second identical resistor regions, individually isolated within said semiconductor body by a P-N junction; (b) an associated region surrounding both resistor regions and made of a resistivity material having a resistivity less than that of said first and second resistor regions; (c) said isolating P-N junctions being disposed between said resistor and said associated surrounding region; (d) electrode means for connecting together one each of each of said first and second resistor regions and for connecting said ends to said associated surrounding region; and (e) a source of a given value of electrical potential being connected to another end of one of said first and second resistor regions, whereby a potential of a fraction of said given value is applied by said electrode means to said associated surrounding region.
Claim 5
Dependent Claim
146 words
A semiconductor device in a semiconductor body, said device comprising: (a) a composite resistor comprising first and second identical resistor regions, individually isolated within said semiconductor body by a P-N junction; (b) an associated region surrounding both resistor regions and made of a resistivity material having a resistivity less than that of said first and second resistor regions; (c) said isolating P-N junctions being disposed between said resistor and said associated surrounding region; (d) electrode means for connecting together one each of each of said first and second resistor regions and for connecting said ends to said associated surrounding region; and (e) a source of a given value of electrical potential being connected to another end of one of said first and second resistor regions, whereby a potential of a fraction of said given value is applied by said electrode means to said associated surrounding region.
Claim 6
Dependent Claim
125 words
A semiconductor device in a semiconductor body, said device comprising: (a) a composite resistor comprising first and second identical resistor regions, individually isolated within said semiconductor body by a P-N junction; (b) a common associated region surrounding said resistor and made of a resistivity material having a resistivity less than that of said resistor; (c) said isolating P-N junction being disposed between said resistor and said associated surrounding region; and (d) electrode means for connecting one end of each of said first and second resistor regions together and to said associated surrounding region and for applying a potential to said associated surrounding region of a value of substantially one-half of that applied to an end of one of said first and second identical resistor regions.
Claim 7
Dependent Claim
125 words
A semiconductor device in a semiconductor body, said device comprising: (a) a composite resistor comprising first and second identical resistor regions, individually isolated within said semiconductor body by a P-N junction; (b) a common associated region surrounding said resistor and made of a resistivity material having a resistivity less than that of said resistor; (c) said isolating P-N junction being disposed between said resistor and said associated surrounding region; and (d) electrode means for connecting one end of each of said first and second resistor regions together and to said associated surrounding region and for applying a potential to said associated surrounding region of a value of substantially one-half of that applied to an end of one of said first and second identical resistor regions.
References Cited (Backward Citations)
US3946425A
Cited
US3818463A
Cited
US3766449A
Cited
US4053336A
Cited
GB1405285A
Cited
US3827034A
Cited
US3922707A
Cited
US3990092A
Cited
US4013971A
Cited
US4161742A
Cited
US4049975A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-16 | 1984-03-17 | 1984-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-16 | 1988-03-17 | 1988-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-16 | 1992-03-17 | 1992-09-16 | $7700.00 | Window Closed / Lapsed |