US3576476A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mesh emitter transistor with subdivided emitter regions
Assignee: US Philips Corp
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Filing: 1969-03-13
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Granted: 1971-04-27
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Expires: 1989-03-13
Abstract
Abstract A mesh emitter transistor for high power, high frequency uses is described. Improved performance is obtained by subdividing the apertured emitter region into at least two portions separated by a base region.
Inventors
- 👤 George Kerr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:44
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
172 words
A transistor of the mesh-emitter-type comprising a semiconductor body having a substantially plane surface, a collector region in said body, a common base region in the collector region and adjacent the plane surface, at least two laterally spaced emitter regions both within the common base region and each completely surrounded by the latter and adjacent the plane surface, each of said emitter regions being continuous and in the form of a mesh having apertures through which base region portions extend to the plane surface forming emitter-base junction intersections at the plane surface, an insulating layer on the plane surface covering the junction intersections and having emitter contact windows over emitter region portions at the plane surface and the base contact windows over the base region portions extending through the emitter mesh apertures at the plane surface, emitter contact means for connection to the surface emitter region portions through the emitter contact windows, and base contact means base contact means for connection to the surface base region portions through the base contact windows.
Claim 2
Dependent Claim
172 words
A transistor of the mesh-emitter-type comprising a semiconductor body having a substantially plane surface, a collector region in said body, a common base region in the collector region and adjacent the plane surface, at least two laterally spaced emitter regions both within the common base region and each completely surrounded by the latter and adjacent the plane surface, each of said emitter regions being continuous and in the form of a mesh having apertures through which base region portions extend to the plane surface forming emitter-base junction intersections at the plane surface, an insulating layer on the plane surface covering the junction intersections and having emitter contact windows over emitter region portions at the plane surface and the base contact windows over the base region portions extending through the emitter mesh apertures at the plane surface, emitter contact means for connection to the surface emitter region portions through the emitter contact windows, and base contact means base contact means for connection to the surface base region portions through the base contact windows.
Claim 3
Dependent Claim
121 words
A transistor as set forth in claim 1 wherein each of said emitter regions comprises at least two rows of mesh apertures, said base contact means comprising a common base contact layer on the insulating layer and a plurality of base contact fingers on the insulating layer each extending over a row of mesh apertures and connected through the base contact windows to the surface base region portions extending through the mesh apertures, said emitter contact means comprising a common contact layer on the insulating layer and a plurality of emitter contact fingers on the insulating layer connected to surface emitter regions through the emitter contact windows and extending substantially parallel to the base contact fingers forming therewith an interdigitated system.
Claim 4
Dependent Claim
28 words
A transistor as set forth in claim 2 and including a series resistor in series between the common emitter contact layer and each of the surface emitter regions.
Claim 5
Dependent Claim
42 words
A transistor as set forth in claim 3 wherein at least a plurality of said series resistors are united to form part of a continuous resistance layer in series between the common emitter contact layer and each of the emitter contact fingers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-26 | 1974-10-26 | 1975-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-26 | 1978-10-26 | 1979-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-26 | 1982-10-26 | 1983-04-27 | $7700.00 | Window Closed / Lapsed |