US3742319A
Expired / Lapsed
US
⏱️ 0.0 years remaining
R f power transistor
Assignee: Communications Transistor Corp
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Filing: 1971-03-08
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Granted: 1973-06-26
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Expires: 1991-03-08
Abstract
Abstract A semiconductive substrate member has deposited thereon collector, emitter, and base electrode structures connected to respective collector, emitter and base subregions of the semiconductive substrate member to form a radio frequency power transistor. The base electrode structure has a resistor incorporated therein, as by depositing a thin film resistor across a gap in the electrode structure, for increasing the electrical stability and electrical ruggedness of the power transistor.
Inventors
- 👤 W Bryan
- 👤 J Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:24
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
145 words
In a radio frequency transistor; a semiconductive substrate member having, a collector region of a first conductivity type semiconductive material, a base region of a second conductivity type semiconductive material interfacing with said collector region to form a base-to-collector semiconductive junction therebetween, an emitter region of the first type conductivity semiconductive material interfacing with said base region to form a base-to-emitter semiconductive junction therebetween; a metallic base electrode structure disposed on and overlaying a region of said substrate member for making electrical contact to said base region of said substrate; and resistor means disposed on said substrate and incorporated in said base electrode structure for decreasing the gain of said transistor, and wherein said base resistor means has a resistance such as to incorporate a total value of series resistance of between one tenth of an ohm and oNe ohm into said base electrode structure.
Claim 2
Dependent Claim
145 words
In a radio frequency transistor; a semiconductive substrate member having, a collector region of a first conductivity type semiconductive material, a base region of a second conductivity type semiconductive material interfacing with said collector region to form a base-to-collector semiconductive junction therebetween, an emitter region of the first type conductivity semiconductive material interfacing with said base region to form a base-to-emitter semiconductive junction therebetween; a metallic base electrode structure disposed on and overlaying a region of said substrate member for making electrical contact to said base region of said substrate; and resistor means disposed on said substrate and incorporated in said base electrode structure for decreasing the gain of said transistor, and wherein said base resistor means has a resistance such as to incorporate a total value of series resistance of between one tenth of an ohm and oNe ohm into said base electrode structure.
Claim 3
Dependent Claim
50 words
The apparatus of claim 1 wherein said base electrode structure includes a pad region, a wire lead affixed to said pad region of said base electrode, and wherein said base resistor means is incorporated in said base electrode means between said wire lead and said base region of said substrate.
Claim 4
Dependent Claim
57 words
The apparatus of claim 1 wherein said base electrode structure includes a pad portion for connection to a wire lead and a plurality of finger portions for making electrical contact to underlying base regions of said substrate, and wherein said base resistor means is connected bridging a gap in said pad portion of said base electrode structure.
Claim 5
Dependent Claim
86 words
The apparatus of claim 1 including, an insulative layer disposed on said substrate between said base electrode structure and said underlying collector region of said semiconductive substrate for insulatively supporting certain regions of said base electrode structure from underlying collector regions of said substrate member, said base electrode structure having a gap therein in series electrically with said base electrode structure, and said base resistor comprising resistive material bridging said gap in said base electrode structure, thereby incorporating said base resistor into said base electrode structure.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-25 | 1976-12-25 | 1977-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-25 | 1980-12-25 | 1981-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-25 | 1984-12-25 | 1985-06-26 | $7700.00 | Window Closed / Lapsed |