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US5486482A
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Process for fabricating metal-gate CMOS transistor
Assignee: United Microelectronics Corp
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Filing: 1995-05-09
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Granted: 1996-01-23
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Expires: 2015-05-09
Abstract
Abstract A process for fabricating metal-gate CMOS transistors on a semiconductor substrate having a well region therein is disclosed herein. The process comprises the steps of: First forming a shielding layer with designated patterns on the substrate and the well region, and, then, forming first field oxides on the substrate or the well region between the designated patterns of the shielding layer through a thermal oxidation procedure. After that, the first field oxides are removed to expose recesses, and drift regions are formed in the substrate and the well region beneath the recesses. Next, second field oxides are formed above the recesses and the shielding layer are subsequently removed. Then, heavily-doped regions are formed in the substrate and the well region between the drift regions, and lightly-doped regions are formed beneath the heavily-doped region, both of which serve as source/drain regions. Finally, a gate oxide layer is formed on the substrate and the well region between the source/drain regions, and an isolation oxide layer is formed on the heavily-doped regions simultaneously, thereby forming a metal gate on the gate oxide layer.
Inventors
- 👤 Sheng-Hsing Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:27
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
172 words
A process for fabricating a metal-gate MOS transistor for use in CMOS integrated circuits formed on a semiconducting substrate of a first conductivity type having a well region of a second conductivity type therein, comprising: (a) forming a shielding layer with designated patterns on said well region; (b) forming first field oxides on said well region between said designated patterns through a thermal oxidation procedure; (c) removing said first field oxides exposing recesses; (d) forming drift regions of said first conductivity type in said well region beneath said recesses; (e) forming second field oxides above said drift regions; (f) removing said shielding layer; (g) forming heavily-doped regions of said first conductivity type in said well region between each pair of said drift regions and lightly-doped regions of said first conductivity type beneath said heavily-doped region as source/drain regions; (h) forming a gate oxide layer on said well region between said source/drain regions and an isolation oxide layer on said heavily-doped regions; and (i) forming a metal gate on said gate oxide layer.
Claim 2
Dependent Claim
172 words
A process for fabricating a metal-gate MOS transistor for use in CMOS integrated circuits formed on a semiconducting substrate of a first conductivity type having a well region of a second conductivity type therein, comprising: (a) forming a shielding layer with designated patterns on said well region; (b) forming first field oxides on said well region between said designated patterns through a thermal oxidation procedure; (c) removing said first field oxides exposing recesses; (d) forming drift regions of said first conductivity type in said well region beneath said recesses; (e) forming second field oxides above said drift regions; (f) removing said shielding layer; (g) forming heavily-doped regions of said first conductivity type in said well region between each pair of said drift regions and lightly-doped regions of said first conductivity type beneath said heavily-doped region as source/drain regions; (h) forming a gate oxide layer on said well region between said source/drain regions and an isolation oxide layer on said heavily-doped regions; and (i) forming a metal gate on said gate oxide layer.
Claim 3
Dependent Claim
38 words
The process as in claim 1, wherein step (i) further comprises: etching and patterning said isolation oxide layer forming contact windows to expose said heavily-doped regions; and forming metal contacts on said heavily-doped regions via said contact windows.
Claim 4
Dependent Claim
13 words
The process as in claim 1, wherein said shielding layer is silicon nitride.
Claim 5
Dependent Claim
20 words
The process as in claim 1, wherein said first conductivity type is N-type and said second conductivity type is P-type.
Claim 6
Dependent Claim
20 words
The process as in claim 1, wherein said first conductivity type is P-type and said second conductivity type is N-type.
Claim 7
Dependent Claim
157 words
A process for fabricating a metal-gate MOS transistor for use in CMOS integrated circuits formed on a semiconducting substrate of a first conductivity type, comprising: (a) forming a shielding layer with designated patterns on said substrate; (b) forming first field oxides on said substrate between said designated patterns through a thermal oxidation procedure; (c) removing said first field oxides exposing recesses; (d) forming drift regions of a second conductivity type in said substrate beneath said recesses; (e) forming second field oxides above said drift regions; (f) removing said shielding layer; (g) forming heavily-doped regions of said second conductivity type in said substrate between each pair of said drift regions and lightly-doped regions of said second conductivity type beneath said heavily-doped region as source/drain regions; (h) forming a gate oxide layer on said sustrate between said source/drain regions and an isolation oxide layer on said heavily-doped regions; and (i) forming a metal gate on said gate oxide layer.
Claim 8
Dependent Claim
157 words
A process for fabricating a metal-gate MOS transistor for use in CMOS integrated circuits formed on a semiconducting substrate of a first conductivity type, comprising: (a) forming a shielding layer with designated patterns on said substrate; (b) forming first field oxides on said substrate between said designated patterns through a thermal oxidation procedure; (c) removing said first field oxides exposing recesses; (d) forming drift regions of a second conductivity type in said substrate beneath said recesses; (e) forming second field oxides above said drift regions; (f) removing said shielding layer; (g) forming heavily-doped regions of said second conductivity type in said substrate between each pair of said drift regions and lightly-doped regions of said second conductivity type beneath said heavily-doped region as source/drain regions; (h) forming a gate oxide layer on said sustrate between said source/drain regions and an isolation oxide layer on said heavily-doped regions; and (i) forming a metal gate on said gate oxide layer.
Claim 9
Dependent Claim
38 words
The process as in claim 6, wherein step (i) further comprises: etching and patterning said isolation oxide layer forming contact windows to expose said heavily-doped regions; and forming metal contacts on said heavily-doped regions via said contact windows.
Claim 10
Dependent Claim
13 words
The process as in claim 6, wherein said shielding layer is silicon nitride.
Claim 11
Dependent Claim
20 words
The process as in claim 6, wherein said first conductivity type is N-type and said second conductivity type is P-type.
Claim 12
Dependent Claim
20 words
The process as in claim 6, wherein said first conductivity type is P-type and said second conductivity type is N-type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-22 | 1999-07-24 | 2000-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-22 | 2003-07-24 | 2004-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-22 | 2007-07-24 | 2008-01-23 | $7700.00 | Window Closed / Lapsed |