US5482869A
Expired / Lapsed
US
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Gettering of unwanted metal impurity introduced into semiconductor substrate during trench formation
Assignee: Toshiba Corp
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Filing: 1994-03-01
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Granted: 1996-01-09
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Expires: 2014-03-01
Abstract
Abstract After a trench is formed in a semiconductor substrate, a semiconductor film is formed on the inner wall of the trench. Annealing is performed in a predetermined condition to subject an unwanted metal impurity to gettering into the semiconductor film. The semiconductor film is then oxidized.
Inventors
- 👤 Yusuke Kohyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:13
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10B; H10B12/00; H10B12/30; H10B12/37; H10P; H10P36/00; H10P36/03; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S257/00; Y10S257/913
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
82 words
A method of making a semiconductor device comprising the steps of: forming a trench in a first conductivity-type semiconductor substrate; lining an inner wall of said trench with a semiconductor layer; annealing said semiconductor substrate to subject an unwanted metal impurity contained in said semiconductor substrate to gettering into said semiconductor layer; oxidizing entirely said semiconductor layer to form an insulating layer; forming a capacitor in said trench; and connecting an electrode of said capacitor to a source/drain region of a MOSFET.
Claim 2
Independent Claim
82 words
A method of making a semiconductor device comprising the steps of: forming a trench in a first conductivity-type semiconductor substrate; lining an inner wall of said trench with a semiconductor layer; annealing said semiconductor substrate to subject an unwanted metal impurity contained in said semiconductor substrate to gettering into said semiconductor layer; oxidizing entirely said semiconductor layer to form an insulating layer; forming a capacitor in said trench; and connecting an electrode of said capacitor to a source/drain region of a MOSFET.
Claim 3
Dependent Claim
34 words
The method according to claim 1, wherein said insulating layer is removed from the inner wall of said trench and another insulating layer is newly formed to line the inner wall of said trench.
Claim 4
Dependent Claim
27 words
The method according to claim 1, wherein said step of forming said trench comprises reactive ion etching, thereby introducing said unwanted metal impurity into said semiconductor substrate.
Claim 5
Dependent Claim
21 words
The method according to claim 1, wherein said semiconductor layer has the same conductivity type as that of said semiconductor substrate.
Claim 6
Dependent Claim
14 words
The method according to claim 1, wherein said semiconductor layer comprises a polysilicon layer.
Claim 7
Dependent Claim
75 words
The method according to claim 1, wherein said step of forming said capacitor in said trench comprises: forming an opening in said insulating film at the bottom of said trench; forming a first polysilicon layer on said insulating layer partly exposed to said semiconductor substrate through the opening at the bottom of said trench; forming a capacitor dielectric layer on said first polysilicon layer; and forming a second polysilicon layer on said capacitor dielectric layer.
Claim 8
Independent Claim
129 words
A method of making a semiconductor device comprising the steps of: forming a trench in a first conductivity-type semiconductor substrate; forming a semiconductor layer within said trench, wherein a first semiconductor layer portion having a first outer surface covers a first inner surface of said trench and a second semiconductor layer portion having a second outer surface covers a second inner surface of said trench, said first outer surface being spaced from and opposing said second outer surface; annealing said semiconductor substrate to subject an unwanted metal impurity contained in said semiconductor substrate to gettering into said semiconductor layer oxidizing entirely said semiconductor layer to form an insulating layer; forming a capacitor in said trench; and connecting an electrode of said capacitor to a source/drain region of a MOSFET.
Claim 9
Independent Claim
129 words
A method of making a semiconductor device comprising the steps of: forming a trench in a first conductivity-type semiconductor substrate; forming a semiconductor layer within said trench, wherein a first semiconductor layer portion having a first outer surface covers a first inner surface of said trench and a second semiconductor layer portion having a second outer surface covers a second inner surface of said trench, said first outer surface being spaced from and opposing said second outer surface; annealing said semiconductor substrate to subject an unwanted metal impurity contained in said semiconductor substrate to gettering into said semiconductor layer oxidizing entirely said semiconductor layer to form an insulating layer; forming a capacitor in said trench; and connecting an electrode of said capacitor to a source/drain region of a MOSFET.
Claim 10
Dependent Claim
14 words
The method according to claim 7, wherein said semiconductor layer comprises a polysilicon layer.
Claim 11
Dependent Claim
17 words
The method according to claim 8, wherein said step of forming said trench comprises reactive ion etching.
Claim 12
Dependent Claim
16 words
The method according to claim 9, further comprising the step of removing said oxidized semiconductor layer.
Claim 13
Dependent Claim
34 words
The method according to claim 10, wherein said step of forming a capacitor comprises the step of forming an oxide film to line said trench after said step of removing said oxidized polysilicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-08 | 1999-07-10 | 2000-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-08 | 2003-07-10 | 2004-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-08 | 2007-07-10 | 2008-01-09 | $7700.00 | Window Closed / Lapsed |