US5482611A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Physical vapor deposition employing ion extraction from a plasma
Assignee: Novellus Systems Inc
•
Filing: 1993-10-08
•
Granted: 1996-01-09
•
Expires: 2013-10-08
Abstract
Abstract A sputter magnetron ion source for producing an intense plasma in a cathode container which ionizes a high and substantial percentage of the sputter cathode material and means for extracting the ions of the cathode material in a beam. The ion extraction means is implemented by a magnetic field cusp configuration with a null region adjacent to the open end of the cathode container. Ions so produced are able to be directed at right angles to a substrate being coated for efficient via filling.
Inventors
- 👤 John C. Helmer
- 👤 Kwok F. Lai
- 👤 Robert L. Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:02
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/354; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/34; H01J37/3402; H01J37/3405; H01J37/3411; H01J37/3414; H01J37/342; H01J37/345; H01J37/3488; H01J37/3497
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
192 words
A sputter magnetron comprising: a. high intensity plasma inducing means, said high intensity plasma inducing means including, i) a sputter cathode, said sputter cathode being a particle confining container having walls and one open side to permit extraction of ions from said container, said walls having an inner surface being of a selected target material, said sputter cathode including means to apply a voltage to said sputter cathode; ii) means to provide and maintain electrons in said particle confining container; iii) magnetic field generating means for providing a null magnetic field value at a region adjacent to said open side of said sputter cathode container and for providing magnetic field lines which loop through said sputter cathode walls thereby providing forces, in operation, for retaining said electrons adjacent to at least a portion of said sputter cathode walls; and b. ion extraction means, wherein said null magnetic field value region comprises a portion of said extraction means, said ion extraction means cooperating, in operation, with ions near said null value region to induce those said ions to exit said cathode container and to follow a path determined by said ion extraction means.
Claim 2
Dependent Claim
192 words
A sputter magnetron comprising: a. high intensity plasma inducing means, said high intensity plasma inducing means including, i) a sputter cathode, said sputter cathode being a particle confining container having walls and one open side to permit extraction of ions from said container, said walls having an inner surface being of a selected target material, said sputter cathode including means to apply a voltage to said sputter cathode; ii) means to provide and maintain electrons in said particle confining container; iii) magnetic field generating means for providing a null magnetic field value at a region adjacent to said open side of said sputter cathode container and for providing magnetic field lines which loop through said sputter cathode walls thereby providing forces, in operation, for retaining said electrons adjacent to at least a portion of said sputter cathode walls; and b. ion extraction means, wherein said null magnetic field value region comprises a portion of said extraction means, said ion extraction means cooperating, in operation, with ions near said null value region to induce those said ions to exit said cathode container and to follow a path determined by said ion extraction means.
Claim 3
Dependent Claim
128 words
The sputter magnetron of claim 1 whereby said ion extraction means includes; a. in operation, a plasma, said plasma being within said sputter cathode, wherein said plasma reaches a steady state condition and wherein said plasma in said sputter cathode has a first positive plasma potential as a result of electron leakage from said plasma; and b. means to establish an electric field sheath potential between said plasma and a first surface remote from said container, said electric field sheath potential being of a polarity to attract positive ions from said plasma to said first surface, and wherein said plasma in the region of said first surface remote from said container has a second plasma potential, said second plasma potential being less positive than said first positive potential.
Claim 4
Dependent Claim
28 words
The sputter magnetron of claim 2 including means for providing at said first remote surface a semiconductor workpiece to be plated with positive metal ions from said plasma.
Claim 5
Dependent Claim
28 words
The sputter magnetron of claim 3 wherein said electric field shealth potential between said plasma and a said semiconductor workpiece is more negative than said second plasma potential.
Claim 6
Dependent Claim
91 words
The sputter magnetron of claim 2 including: means for further increasing the concentration of ions of the material of said sputter cathode in said sputter cathode container, said means for further increasing the concentration of ions in said sputter cathode container being means for causing an electromagnetic wave interaction with said plasma which provides energy to said plasma and decreases the mean free path of neutral atoms of said sputter cathode material after said neutral atoms have been knocked off the surface of said cathode by ion bombardment from said plasma.
Claim 7
Dependent Claim
23 words
The apparatus of claim 5 including an electromagnetic wave transmission means to introduce said electromagnetic wave energy to the vicinity of said plasma.
Claim 8
Dependent Claim
15 words
The apparatus of claim 6 wherein said vicinity of said plasma encompasses said null region.
Claim 9
Dependent Claim
20 words
The apparatus of claim 1 wherein said high intensity plasma is on the order of 10 13 particles/cc or greater.
Claim 10
Dependent Claim
27 words
The apparatus of claim 8 wherein said particle confining container is at least one groove having a width W on the order of one inch or less.
Claim 11
Dependent Claim
16 words
The apparatus of claim 9 wherein said at least one groove is a plurality of grooves.
Claim 12
Dependent Claim
21 words
The apparatus of claim 10 wherein said grooves are interconnected so that only one simultaneous continuous plasma loop exists, in operation.
Claim 13
Dependent Claim
25 words
The apparatus of claim 11 wherein, in operation, said high intensity plasma contains a percentage of ions of said target material greater than 2.0 percent.
Claim 14
Dependent Claim
29 words
The apparatus of claim 12 including means for mounting a semiconductor workpiece to be plated with said target materials ions exiting said cathode container from near said null point.
Claim 15
Dependent Claim
25 words
The apparatus of claim 8 wherein said particle confining container is cup shaped having a diameter W on the order of one inch or less.
Claim 16
Dependent Claim
59 words
The apparatus of claim 14 comprising an anode, said anode being spaced from and electrically isolated from said sputter cathode by insulation means; and means to shield said insulation means from being plated by sputtered cathode material by blocking the line of sight from said sputtered cathode to said insulation means to prevent shorting the cathode to the anode.
Claim 17
Dependent Claim
25 words
The apparatus of claim 1 wherein said particle confining container is cup shaped, having a diameter W on the order of one inch or less.
Claim 18
Dependent Claim
25 words
The apparatus of claim 16 wherein, in operation, said high intensity plasma contains a percentage of ions of said target material greater than 2.0 percent.
Claim 19
Dependent Claim
29 words
The apparatus of claim 17 including means for mounting a semiconductor workpiece to be plated with said target material ions exiting said cathode container from near said null point.
Claim 20
Dependent Claim
53 words
The apparatus of claim 16 further comprising gas port means, said gas port means being an aperture through a wall of said sputter cathode confining container, said aperture being in a wall portion remote from said open side for passage of a plasma initiating gas into said container thereby permitting lower operating pressure.
Claim 21
Dependent Claim
30 words
The apparatus of claim 16 further comprising input and output fluid conduits arranged in a heat exchange relationship with said cathode particle confining container, said conduits for conducting coolant fluid.
Claim 22
Dependent Claim
17 words
The apparatus of claim 20 wherein said fluid conduits are connected to a turbulence producing heat exchanger.
Claim 23
Dependent Claim
182 words
In apparatus for directing ions of a target material to a workpiece, comprising; means for generating a high intensity plasma on the order of 10 13 particles/cc containing a percentage of ions of said target material greater than 2.0 percent; means for causing said plasma to contact said workpiece, whereby ions of the target material to be deposited present in said plasma are directed to said workpiece at an angle which is generally normal to the surface of said workpiece; magnetic field producing means; said means for generating a high intensity plasma comprises magnetron sputter source means, including a target cathode comprising said material to be deposited on said workpiece, said target cathode comprising a plasma confining container having opposed plasma confining walls and one open side, opposed plasma confining walls being separated by a small distance W on the order of one inch and wherein said magnetic field producing means provides magnetic flux lines which are primarily parallel to said opposed confining walls and wherein said magnetic field producing means further provides a magnetic null region near said one open side.
Claim 24
Dependent Claim
182 words
In apparatus for directing ions of a target material to a workpiece, comprising; means for generating a high intensity plasma on the order of 10 13 particles/cc containing a percentage of ions of said target material greater than 2.0 percent; means for causing said plasma to contact said workpiece, whereby ions of the target material to be deposited present in said plasma are directed to said workpiece at an angle which is generally normal to the surface of said workpiece; magnetic field producing means; said means for generating a high intensity plasma comprises magnetron sputter source means, including a target cathode comprising said material to be deposited on said workpiece, said target cathode comprising a plasma confining container having opposed plasma confining walls and one open side, opposed plasma confining walls being separated by a small distance W on the order of one inch and wherein said magnetic field producing means provides magnetic flux lines which are primarily parallel to said opposed confining walls and wherein said magnetic field producing means further provides a magnetic null region near said one open side.
Claim 25
Dependent Claim
13 words
The apparatus of claim 22 wherein said plasma confining container comprises a groove.
Claim 26
Dependent Claim
11 words
The apparatus of claim 23 wherein said groove forms an annulus.
Claim 27
Dependent Claim
11 words
The apparatus of claim 23 wherein said groove forms a labyrinth.
Claim 28
Dependent Claim
14 words
The apparatus of claim 22 further comprising means for cooling said magnetron sputter source.
Claim 29
Independent Claim
153 words
An apparatus for depositing a thin film on a planar substrate in a vacuum chamber comprising: high intensity magnetron sputter source means including a target cathode made from a material to be deposited for producing a plasma comprising greater than 10 percent of ions sputtered from said target cathode; magnetic field producing means for creating a magnetic field between said cathode and said substrate, said magnetic field having a magnetic null region; whereby said target cathode has a generally planar face and a groove portion having opposing walls from which material to be deposited is sputtered, wherein the plasma density is greatest within said groove portion and wherein said opposing walls of said groove portion are separated by a distance on the order of one inch; and wherein sputtered atoms of said target cathode being directed toward said planar substrate have least ten (10) percent, of ionized atoms sputtered from said target cathode.
Claim 30
Independent Claim
153 words
An apparatus for depositing a thin film on a planar substrate in a vacuum chamber comprising: high intensity magnetron sputter source means including a target cathode made from a material to be deposited for producing a plasma comprising greater than 10 percent of ions sputtered from said target cathode; magnetic field producing means for creating a magnetic field between said cathode and said substrate, said magnetic field having a magnetic null region; whereby said target cathode has a generally planar face and a groove portion having opposing walls from which material to be deposited is sputtered, wherein the plasma density is greatest within said groove portion and wherein said opposing walls of said groove portion are separated by a distance on the order of one inch; and wherein sputtered atoms of said target cathode being directed toward said planar substrate have least ten (10) percent, of ionized atoms sputtered from said target cathode.
Claim 31
Dependent Claim
11 words
The apparatus of claim 27 wherein said groove is an annulus.
Claim 32
Dependent Claim
11 words
The apparatus of claim 27 wherein said groove is a labyrinth.
References Cited (Backward Citations)
US3369990A
Cited
US3962988A
Cited
US4039416A
Cited
US4046660A
Cited
US4655893A
Cited
US4420386A
Cited
US4622121A
Cited
US4732761A
Cited
US4588490A
Cited
US5022977A
Cited
US4950956A
Cited
US4824544A
Cited
US4915805A
Cited
US4925542A
Cited
US4966677A
Cited
US5178743A
Cited
US5045166A
Cited
US5073245A
Cited
US5069770A
Cited
US5178739A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-08 | 1999-07-10 | 2000-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-08 | 2003-07-10 | 2004-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-08 | 2007-07-10 | 2008-01-09 | $7700.00 | Window Closed / Lapsed |