US5069770A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sputtering process employing an enclosed sputtering target
Assignee: Eastman Kodak Co
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Filing: 1990-07-23
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Granted: 1991-12-03
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Expires: 2010-07-23
Abstract
Abstract A sputtering process employs a target which defines a hollow sputtering chamber having a relatively small orifice or slit through which particles, sputtered from the chamber-defining interior surfaces of the target, can exit the chamber and deposit on a workpiece or substrate disposed externally of the chamber and facing the orifice. According to a preferred embodiment, heating of the substrate by high energy secondary electrons exiting the sputtering chamber through the target orifice is significantly reduced by producing a magnetic field within the sputtering chamber, and by arranging a positively biased electrode (i.e. an anode) within the sputtering chamber opposite the target orifice. The magnetic field serves to prevent the escape of a substantial portion of such electrons from the target interior, and the anode performs the same function by collecting such electrons as they impinge thereon.
Inventors
- 👤 David A. Glocker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:07
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3414; H01J37/342; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407; H01J37/3402; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
168 words
A sputtering process for depositing a thin-film of material on a workpiece, said process comprising the steps of: (a) providing a sputtering target having electrically conductive walls which define a substantially enclosed sputtering chamber, one of said walls having at least one relatively small orifice therein, said orifice having a cross-sectional area which is at least ten times smaller than the largest cross-sectional area of the sputtering chamber; (b) supporting a workpiece in a position confronting said orifice; (c) connecting said target to a reference voltage efficient to produce a sputtering plasma within said sputtering chamber to sputter particles from the chamber-defining walls of the target, a portion of such particles exiting said chamber through said orifice and depositing on the workpiece; (d) producing a magnetic field within said chamber in a direction substantially parallel to a line between the target and the workpiece; and (e) providing an electrode within said target and connecting said electrode to a voltage which is positive with respect to said reference voltage.
Claim 2
Dependent Claim
168 words
A sputtering process for depositing a thin-film of material on a workpiece, said process comprising the steps of: (a) providing a sputtering target having electrically conductive walls which define a substantially enclosed sputtering chamber, one of said walls having at least one relatively small orifice therein, said orifice having a cross-sectional area which is at least ten times smaller than the largest cross-sectional area of the sputtering chamber; (b) supporting a workpiece in a position confronting said orifice; (c) connecting said target to a reference voltage efficient to produce a sputtering plasma within said sputtering chamber to sputter particles from the chamber-defining walls of the target, a portion of such particles exiting said chamber through said orifice and depositing on the workpiece; (d) producing a magnetic field within said chamber in a direction substantially parallel to a line between the target and the workpiece; and (e) providing an electrode within said target and connecting said electrode to a voltage which is positive with respect to said reference voltage.
Claim 3
Dependent Claim
23 words
The process defined by claim 1 further comprising the step of positioning said electrode directly opposite said orifice in said one target wall.
Claim 4
Dependent Claim
19 words
The process defined by claim 1 further comprising the step of fabricating said target walls from a metallic compound.
Claim 5
Dependent Claim
208 words
A sputtering process for depositing a thin-film of material on a workpiece, said process comprising the steps of; (a) arranging a sputtering target within a vacuum chamber, said target having electrically conductive walls which define a substantially enclosed sputtering chamber, one of said walls having at least one relatively small orifice therein, said orifice having a cross-sectional area which is substantially smaller than the largest cross-sectional area of the sputtering chamber; (b) supporting a workpiece within said vacuum chamber in position confronting said orifice; (c) evacuating said vacuum chamber; (d) introducing a sputtering gas directly into said sputtering chamber, whereby the pressure within said sputtering chamber is higher than the pressure within said vacuum chamber; and (e) connecting said target to a reference voltage efficient to produce a sputtering plasma within said sputtering chamber to sputter particles from the chamber-defining walls of the target, a portion of such particles exiting said chamber through said orifice and depositing on the workpiece; (f) producing a magnetic field within said sputtering chamber in a direction substantially parallel to a line between the target and the workpiece; and (g) providing an electrode within said sputtering chamber and connecting said electrode to a voltage which is positive with respect to said reference voltage.
Claim 6
Dependent Claim
208 words
A sputtering process for depositing a thin-film of material on a workpiece, said process comprising the steps of; (a) arranging a sputtering target within a vacuum chamber, said target having electrically conductive walls which define a substantially enclosed sputtering chamber, one of said walls having at least one relatively small orifice therein, said orifice having a cross-sectional area which is substantially smaller than the largest cross-sectional area of the sputtering chamber; (b) supporting a workpiece within said vacuum chamber in position confronting said orifice; (c) evacuating said vacuum chamber; (d) introducing a sputtering gas directly into said sputtering chamber, whereby the pressure within said sputtering chamber is higher than the pressure within said vacuum chamber; and (e) connecting said target to a reference voltage efficient to produce a sputtering plasma within said sputtering chamber to sputter particles from the chamber-defining walls of the target, a portion of such particles exiting said chamber through said orifice and depositing on the workpiece; (f) producing a magnetic field within said sputtering chamber in a direction substantially parallel to a line between the target and the workpiece; and (g) providing an electrode within said sputtering chamber and connecting said electrode to a voltage which is positive with respect to said reference voltage.
Claim 7
Dependent Claim
23 words
The process defined by claim 4 further comprising the step of positioning said electrode directly opposite said orifice in said one target wall.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-02 | 1995-06-03 | 1995-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-02 | 1999-06-03 | 1999-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-02 | 2003-06-03 | 2003-12-03 | $7700.00 | Window Closed / Lapsed |