Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal

Claim 2

An FET switch for microwave signals, comprising: a first transmission path for receiving signals having at least one FET with a negative threshold voltage serially connected in said path and a second transmission path for transmitting signals of a higher power level than the received signals of said first transmission path having at least one FET with a negative threshold voltage serially connected in said path, said at least one serially connected FET of each path for switching signal transmission through the respective said first transmission path and said second transmission path, the negative threshold voltage of each of said at least one serially connected FET of said second transmission path having a greater negative value than the negative threshold voltage of each said at least one serially connected FET of said first transmission path.

Claim 3

An FET switch as in claim 1, wherein: said first transmission path has at least one branching FET with a negative threshold voltage substantially equal to the negative threshold value of each said at least one serially connected FET of said second transmission path, and said second transmission path has at least one branching FET with a negative threshold voltage substantially equal to the negative threshold value of each said at least one serially connected FET of said first transmission path.

Claim 4

An FET switch as in claim 2, wherein each of said first and second transmission paths has a circuit configuration different from the other.

Claim 5

An FET switch as in claim 1 wherein said second transmission path has a plurality of serially connected FETs each having substantially the same negative threshold voltage.

Claim 6

An FET switch as in claim 4, wherein: said first transmission path has one or more branching FET having a negative threshold voltage substantially equal to the negative threshold voltage of each of the plurality of serially connected FETs of said second transmission path, and said second transmission path has one or more branching FET(s) having a negative threshold voltage substantially equal to the negative threshold voltage of each said at least one serially connected FET of said first transmission path.

Claim 7

An FET switch as claimed in claim 5, wherein each of said first and second transmission paths has a circuit configuration different from the other.

Claim 8

An FET antenna switch for microwave signal, comprising: a first transmission path for receiving signals received by the antenna having at least one FET with a negative threshold voltage serially connected in said path and a second transmission path for transmitting signals to the antenna of a higher power level than the received signals of said first transmission path and having at least one FET with a negative threshold value serially connected in said path, said at least one FET of each of said first and second transmission path for respectively switching signal transmission through said first transmission path for receiving and said second transmission path for transmitting, the negative threshold voltage of each said at least one serially connected FET of said second transmission path for transmitting being of a higher negative value than the negative threshold voltage of each said at least one serially connected FET of said first transmission path for receiving.

Claim 9

An FET antenna switch for microwave signal, comprising: a first transmission path for receiving signals received by the antenna having at least one FET with a negative threshold voltage serially connected in said path and a second transmission path for transmitting signals to the antenna of a higher power level than the received signals of said first transmission path and having at least one FET with a negative threshold value serially connected in said path, said at least one FET of each of said first and second transmission path for respectively switching signal transmission through said first transmission path for receiving and said second transmission path for transmitting, the negative threshold voltage of each said at least one serially connected FET of said second transmission path for transmitting being of a higher negative value than the negative threshold voltage of each said at least one serially connected FET of said first transmission path for receiving.

Claim 10

An FET switch as in claim 7, wherein said second transmission path for transmitting has at least one branching FET with a negative threshold voltage substantially equal to the negative threshold value of a said at least one serially connected FET of said first transmission path for receiving, and said first transmission path for receiving has at least one branching FET with a negative threshold voltage substantially equal to the negative threshold value of a said at least one serially connected FET of said second transmission path for transmitting.

Claim 11

An FET switch as in claim 7 wherein said second transmission path for transmitting has a plurality of serially connected FETs, the negative threshold voltage of each of the plurality of serially connected FETs of said second transmission path for transmitting being substantially the same.

Claim 12

An FET switch as in claim 9, wherein said second transmission path for transmitting has at least one branching FET with a negative threshold voltage substantially equal to the respective threshold voltage of the said at least one serially connected FET of said first transmission path for receiving, and said first transmission path for receiving has at least one branching FET with a negative threshold voltage substantially equal to the negative threshold voltage of one of the plurality of serially connected FETs of said second transmission path for transmitting.

Claim 13

An FET switch as claimed in claim 10, wherein each of said first and second transmission path means has a circuit configuration different from the other.